M29W160FB70N3E vs M29W160EB70N3E Perbandingan

Perbandingan bersamaan detil M29W160FB70N3E dari Micron Technology dan M29W160EB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ Aktif
Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29W160FB70N3E M29W160EB70N3E
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori FLASH - NOR FLASH - NOR
Ukuran Memori 16 Mbit (2M x8 / 1M x16) 16 Mbit (2M x8, 1M x16)
Access Time 70 ns 70 ns
Antarmuka Parallel Parallel
Supply Voltage (VCC) 3.0 V to 3.6 V 2.7 V to 3.6 V
Programming Voltage Single supply (no separate VPP required) —
Bus Configuration x8 / x16 selectable (BYTE# pin) —
Architecture Boot block —
Paket / Case 48-TFSOP (0.724 in, 18.40 mm width) 48-TFSOP (0.724 in, 18.40 mm width)
Tipe Mounting Surface Mount Surface Mount
Packaging Tray Tray
Suhu Kerja [DATA_NEEDED: operating temperature range] -40C to +125C
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: data retention] —
Status Output Data polling / toggle bit —
Block Protection Yes (boot block protection) —
Organisasi — 2M x8 / 1M x16
Programming Time — 10 us (typical)
Cell Type — SLC NOR
Speed Grade — -70
FBGA Code — N/A (TSOP package)
Status RoHS — [DATA_NEEDED: RoHS status]
Level MSL — [DATA_NEEDED: moisture sensitivity level]

Spek dan Sumber

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