M29W160FB70N3E vs M29W160EB70N3E 比較

詳細並排比較 M29W160FB70N3E 由 Micron Technology 與 M29W160EB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ 啟用中
Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ 啟用中

規格比較

參數 M29W160FB70N3E M29W160EB70N3E
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 FLASH - NOR FLASH - NOR
記憶體容量 16 Mbit (2M x8 / 1M x16) 16 Mbit (2M x8, 1M x16)
Access Time 70 ns 70 ns
介面 Parallel Parallel
Supply Voltage (VCC) 3.0 V to 3.6 V 2.7 V to 3.6 V
Programming Voltage Single supply (no separate VPP required) —
Bus Configuration x8 / x16 selectable (BYTE# pin) —
Architecture Boot block —
封裝 / 外殼 48-TFSOP (0.724 in, 18.40 mm width) 48-TFSOP (0.724 in, 18.40 mm width)
安裝類型 Surface Mount Surface Mount
Packaging Tray Tray
工作溫度 [DATA_NEEDED: operating temperature range] -40C to +125C
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: data retention] —
Status Output Data polling / toggle bit —
Block Protection Yes (boot block protection) —
組織 — 2M x8 / 1M x16
Programming Time — 10 us (typical)
Cell Type — SLC NOR
Speed Grade — -70
FBGA Code — N/A (TSOP package)
RoHS 狀態 — [DATA_NEEDED: RoHS status]
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

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