M29W160FB70N3E vs M29W160EB70N3E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W160FB70N3E sa pamamagitan ng Micron Technology at M29W160EB70N3E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron
M29W160FB70N3E ✓ NakahandaMicron Technology
M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron
M29W160EB70N3E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29W160FB70N3E | M29W160EB70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | FLASH - NOR | FLASH - NOR |
| Laki ng Memory | 16 Mbit (2M x8 / 1M x16) | 16 Mbit (2M x8, 1M x16) |
| Access Time | 70 ns | 70 ns |
| Interface | Parallel | Parallel |
| Supply Voltage (VCC) | 3.0 V to 3.6 V | 2.7 V to 3.6 V |
| Programming Voltage | Single supply (no separate VPP required) | — |
| Bus Configuration | x8 / x16 selectable (BYTE# pin) | — |
| Architecture | Boot block | — |
| Packhaging / Kaso | 48-TFSOP (0.724 in, 18.40 mm width) | 48-TFSOP (0.724 in, 18.40 mm width) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Tray | Tray |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Status Output | Data polling / toggle bit | — |
| Block Protection | Yes (boot block protection) | — |
| Organisasyon | — | 2M x8 / 1M x16 |
| Programming Time | — | 10 us (typical) |
| Cell Type | — | SLC NOR |
| Speed Grade | — | -70 |
| FBGA Code | — | N/A (TSOP package) |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |