MC33289DWR2 vs BTS621L1E3128ABUMA1 Perbandingan

Perbandingan bersamaan detil MC33289DWR2 dari NXP Semiconductors dan BTS621L1E3128ABUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MC33289DWR2 MC33289DWR2 - Dual High-Side Switch 40mOhm 27V | NXP SOIC-20

MC33289DWR2 - Dual High-Side Switch 40mOhm 27V | NXP SOIC-20

MC33289DWR2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MC33289DWR2 BTS621L1E3128ABUMA1
Merek NXP Semiconductors Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Dual High-Side Switch (DHSS) Dual-channel smart high-side power switch (PROFET)
Topologi 2 x High-Side N-MOSFET switches —
On-State Resistance (RDSon) 40 mOhm (per channel) —
Supply Voltage Range (VCC) 6 V to 27 V —
Maximum Transient Voltage 40 V (load dump tolerant) —
Output Current per Channel [DATA_NEEDED: continuous current rating per channel] —
Jumlah Output 2 —
Input Compatibility TTL/CMOS compatible logic inputs —
Fault Protection Current limit, thermal shutdown, open-load detect —
Status Feedback Yes (fault flag output) —
Suhu Kerja -40C to +125C (automotive grade) —
Paket 20-SOIC (0.295 inch, 7.50 mm width) PG-TO263-7-2 (D2PAK-7, exposed tab)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS [DATA_NEEDED: RoHS status] —
Automotive Grade Yes (AEC-Q100 qualified) —
Charge Pump Integrated (gate drive) —
Number of Channels — 2 (dual high-side, 1:1)
FET Topology — N-Channel vertical power MOSFET with charge pump
On-State Resistance Rds(on) — 8 mΩ typical per channel
Nominal Operating Voltage — 12 V (automotive bus)
Maximum Supply Voltage — 24 V (load-dump survivable)
Continuous Load Current — 4.4 A per channel
Rentang Suhu Kerja — -40 °C to +150 °C junction
Input Logic Compatibility — CMOS-compatible, ground-referenced
Diagnostic Feedback — Yes - open-load and overtemperature reporting
Embedded Protection — Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery
Technology — Smart SIPMOS (monolithic)
RoHS / Lead-Free — Compliant (Pb-free)

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