MC9S12XDP512MAG vs MC9S12DG128CPV Perbandingan
Perbandingan bersamaan detil MC9S12XDP512MAG dari NXP Semiconductors dan MC9S12DG128CPV dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MC9S12XDP512MAG | MC9S12DG128CPV |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Microcontrollers | Microcontrollers |
| Status Lingkungan Hidup | NRND | Aktif |
| Core Processor | HCS12X (16-bit CISC) | — |
| Core Size | 16-bit | — |
| Frekuensi Bawah Maximum | 80 MHz | — |
| Flash Memory Size | 512 KB (512K x 8) | — |
| Tegangan Pemuat | 2.5 V / 5 V | — |
| Paket | 144-LQFP (20x20 mm) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Terminal Form | Gull Wing | — |
| Package Shape | Square (LFQFP) | — |
| ADC Resolution | 10-bit | — |
| Temperature Grade | Automotive | — |
| Qualification | AEC-Q100 | — |
| Instruction Set Compatibility | Upward compatible with HCS12 | — |
| External Bus Interface | Yes (144-pin LQFP option) | — |
| Target Application Domain | Automotive multiplexing | — |
| Status Lingkungan Hidup | NRND (Not Recommended for New Designs) | — |
| Core Architecture | — | HCS12 (16-bit CISC) |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| EEPROM | — | 2 KB |
| Number of I/O Pins | — | 91 |
| Paket / Case | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Timer | — | Enhanced Capture Timer (ECT), 8 channels |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| Suhu Kerja | — | -40 C to +125 C (automotive) |
| Level MSL | — | 3 (168 hours) |
| Debug Interface | — | Background Debug Mode (BDM) |
| Status RoHS | — | [DATA_NEEDED: RoHS status from manufacturer] |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |