MC9S12XDP512MAG vs MC9S12DG128CPV Karşılaştırma
Ayrıntılı yan yana karşılaştırma MC9S12XDP512MAG tarafından NXP Semiconductors ve MC9S12DG128CPV tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MC9S12XDP512MAG | MC9S12DG128CPV |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | Microcontrollers | Microcontrollers |
| Yaşam Döngüsü Durumu | NRND | Aktif |
| Core Processor | HCS12X (16-bit CISC) | — |
| Core Size | 16-bit | — |
| Azami Saat Hızı | 80 MHz | — |
| Flash Memory Size | 512 KB (512K x 8) | — |
| Besleme Gerilimi | 2.5 V / 5 V | — |
| Paket | 144-LQFP (20x20 mm) | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Terminal Form | Gull Wing | — |
| Package Shape | Square (LFQFP) | — |
| ADC Resolution | 10-bit | — |
| Temperature Grade | Automotive | — |
| Qualification | AEC-Q100 | — |
| Instruction Set Compatibility | Upward compatible with HCS12 | — |
| External Bus Interface | Yes (144-pin LQFP option) | — |
| Target Application Domain | Automotive multiplexing | — |
| Yaşam Döngüsü Durumu | NRND (Not Recommended for New Designs) | — |
| Core Architecture | — | HCS12 (16-bit CISC) |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| EEPROM | — | 2 KB |
| Number of I/O Pins | — | 91 |
| Paket / Kas | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Timer | — | Enhanced Capture Timer (ECT), 8 channels |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| İşletim Sıcaklığı | — | -40 C to +125 C (automotive) |
| MSL Seviyesi | — | 3 (168 hours) |
| Debug Interface | — | Background Debug Mode (BDM) |
| RoHS Durumu | — | [DATA_NEEDED: RoHS status from manufacturer] |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |