MMA7340LR1 vs MMA7330LR1 Perbandingan
Perbandingan bersamaan detil MMA7340LR1 dari NXP Semiconductors dan MMA7330LR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MMA7340LR1 | MMA7330LR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Motion Sensors | Motion Sensors |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Tipe Pengukur | 3-Axis Capacitive MEMS Accelerometer | Accelerometer, 3-axis |
| Acceleration Range | ±3g, ±11g (selectable via g-Select) | ±4g (g-Select low), ±12g (g-Select high) |
| Tipe Output | Analog voltage (one VOUT per axis) | Analog voltage (ratiometric) |
| Sensitivity (3g mode) | [DATA_NEEDED: 3g mode sensitivity mV/g] | — |
| Sensitivity (11g mode) | [DATA_NEEDED: 11g mode sensitivity mV/g] | — |
| Zero-g Offset (factory trimmed) | [DATA_NEEDED: zero-g offset V] | — |
| Bandwidth (X, Y axes) | 400 Hz | — |
| Bandwidth (Z axis) | 300 Hz | — |
| Filter | 1-pole low-pass | 1-pole low-pass on-chip |
| Self-Test | Yes (logic-level input) | Yes (active high) |
| Sleep Mode | Yes (logic-level input) | — |
| Tegangan Pemuat | 2.2 V to 3.6 V (typical 3.3 V) | — |
| Supply Current (active) | [DATA_NEEDED: active supply current mA] | — |
| Supply Current (sleep) | [DATA_NEEDED: sleep supply current uA] | — |
| Suhu Kerja | -40 C to +85 C | -40 °C to +85 °C |
| Paket | 14-LGA (3 x 5 mm) | 14-LGA (3 mm x 5 mm x 1 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free Status | Lead Free | — |
| Axes Measured | — | X, Y, Z |
| Sensitivity (±4g mode) | — | 800 mV/g (typical at Vdd=3.3 V) |
| Sensitivity (±12g mode) | — | 200 mV/g (typical at Vdd=3.3 V) |
| Bandwidth (X, Y) | — | 400 Hz |
| Bandwidth (Z) | — | 300 Hz |
| Supply Voltage (Vdd) | — | 2.2 V to 3.5 V |
| Supply Voltage (VddIO) | — | 1.71 V to 3.5 V |
| Arus Pemuat | — | 400 µA typical |
| Tetesan Bising | — | 1.5 mg/√Hz typical |
| Zero-g Offset (factory trim) | — | Pre-trimmed, no external components required |
| Shock Survival | — | 10,000 g (per NXP test methodology) |