MMA7340LR1 vs MMA7330LR1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MMA7340LR1 disebabkan oleh NXP Semiconductors dan MMA7330LR1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MMA7340LR1 | MMA7330LR1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Motion Sensors | Motion Sensors |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Sensus | 3-Axis Capacitive MEMS Accelerometer | Accelerometer, 3-axis |
| Acceleration Range | ±3g, ±11g (selectable via g-Select) | ±4g (g-Select low), ±12g (g-Select high) |
| Jenis Output | Analog voltage (one VOUT per axis) | Analog voltage (ratiometric) |
| Sensitivity (3g mode) | [DATA_NEEDED: 3g mode sensitivity mV/g] | — |
| Sensitivity (11g mode) | [DATA_NEEDED: 11g mode sensitivity mV/g] | — |
| Zero-g Offset (factory trimmed) | [DATA_NEEDED: zero-g offset V] | — |
| Bandwidth (X, Y axes) | 400 Hz | — |
| Bandwidth (Z axis) | 300 Hz | — |
| Filter | 1-pole low-pass | 1-pole low-pass on-chip |
| Self-Test | Yes (logic-level input) | Yes (active high) |
| Sleep Mode | Yes (logic-level input) | — |
| Tegangan Pemberi Arus | 2.2 V to 3.6 V (typical 3.3 V) | — |
| Supply Current (active) | [DATA_NEEDED: active supply current mA] | — |
| Supply Current (sleep) | [DATA_NEEDED: sleep supply current uA] | — |
| Suhu Operasi | -40 C to +85 C | -40 °C to +85 °C |
| Kemasan | 14-LGA (3 x 5 mm) | 14-LGA (3 mm x 5 mm x 1 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free Status | Lead Free | — |
| Axes Measured | — | X, Y, Z |
| Sensitivity (±4g mode) | — | 800 mV/g (typical at Vdd=3.3 V) |
| Sensitivity (±12g mode) | — | 200 mV/g (typical at Vdd=3.3 V) |
| Bandwidth (X, Y) | — | 400 Hz |
| Bandwidth (Z) | — | 300 Hz |
| Supply Voltage (Vdd) | — | 2.2 V to 3.5 V |
| Supply Voltage (VddIO) | — | 1.71 V to 3.5 V |
| Arus Pemberi Arus | — | 400 µA typical |
| Jisim Bising | — | 1.5 mg/√Hz typical |
| Zero-g Offset (factory trim) | — | Pre-trimmed, no external components required |
| Shock Survival | — | 10,000 g (per NXP test methodology) |