MRF6S9045NBR1 vs MRF6S9045NR1 Perbandingan

Perbandingan bersamaan detil MRF6S9045NBR1 dari NXP Semiconductors dan MRF6S9045NR1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MRF6S9045NBR1 MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors

MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors

MRF6S9045NBR1 ✓ Aktif
NXP Semiconductors
MRF6S9045NR1 MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MRF6S9045NBR1 MRF6S9045NR1
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale) Freescale Semiconductor (acquired by NXP)
Tipe Transistor N-Channel Enhancement-Mode Lateral MOSFET LDMOS, N-Channel Enhancement-Mode
Technology Lateral DMOS, RF power Lateral MOSFET (RF Power)
Operating Frequency Up to 1000 MHz (typical 880 MHz) 880 MHz (up to 1000 MHz)
Drain-Source Voltage (V DSS min) 68 V —
Typical Operating Drain Voltage (V DD) 28 V —
Quiescent Drain Current (I DQ) 350 mA —
Output Power (P out avg) 10 W —
Power Gain (G ps) 22.7 dB at 880 MHz —
Drain Efficiency (η D) [DATA_NEEDED: drain efficiency %] —
Maximum Power Dissipation (P D max) 175 W —
Configuration Single, common-source —
Tipe Mounting Surface Mount (flange/ceramic) Surface Mount
Paket / Case NI-880H-2L (TO-272-2 variant) TO-270-2 (Case 1265-09, Style 1)
Suhu Kerja [DATA_NEEDED: junction/storage temperature range] —
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant —
Lead-Free Yes —
Drain-Source Voltage (VDS) Rated — 68 V
Operating Drain Voltage (VDD) — 28 V (typical)
Continuous Drain Current (ID) — 10 uA (rated)
Quiescent Current (IDQ) — 350 mA
Output Power (Pout) — 10 W Avg.
Power Gain — 22.7 dB
Drain Efficiency — [DATA_NEEDED: typical efficiency percentage at Pout=10W]
Lead-Free / RoHS — Yes (N suffix = lead-free terminations)
VSWR Ruggedness — Infinite VSWR at rated VDD
Application — 880 MHz Single-Carrier N-CDMA Base Station PA

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