MRF6S9045NBR1 vs MRF6S9045NR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S9045NBR1 tarafından NXP Semiconductors ve MRF6S9045NR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ AktifÖzellik Karşılaştırması
| Parametre | MRF6S9045NBR1 | MRF6S9045NR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | Freescale Semiconductor (acquired by NXP) |
| Transistor Türü | N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral DMOS, RF power | Lateral MOSFET (RF Power) |
| Operating Frequency | Up to 1000 MHz (typical 880 MHz) | 880 MHz (up to 1000 MHz) |
| Drain-Source Voltage (V DSS min) | 68 V | — |
| Typical Operating Drain Voltage (V DD) | 28 V | — |
| Quiescent Drain Current (I DQ) | 350 mA | — |
| Output Power (P out avg) | 10 W | — |
| Power Gain (G ps) | 22.7 dB at 880 MHz | — |
| Drain Efficiency (η D) | [DATA_NEEDED: drain efficiency %] | — |
| Maximum Power Dissipation (P D max) | 175 W | — |
| Configuration | Single, common-source | — |
| Montaj Türü | Surface Mount (flange/ceramic) | Surface Mount |
| Paket / Kas | NI-880H-2L (TO-272-2 variant) | TO-270-2 (Case 1265-09, Style 1) |
| İşletim Sıcaklığı | [DATA_NEEDED: junction/storage temperature range] | — |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | — |
| RoHS Durumu | Compliant | — |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) Rated | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Continuous Drain Current (ID) | — | 10 uA (rated) |
| Quiescent Current (IDQ) | — | 350 mA |
| Output Power (Pout) | — | 10 W Avg. |
| Power Gain | — | 22.7 dB |
| Drain Efficiency | — | [DATA_NEEDED: typical efficiency percentage at Pout=10W] |
| Lead-Free / RoHS | — | Yes (N suffix = lead-free terminations) |
| VSWR Ruggedness | — | Infinite VSWR at rated VDD |
| Application | — | 880 MHz Single-Carrier N-CDMA Base Station PA |