MRFE6S9135HR3 vs MRFE6S9135HSR3 Perbandingan

Perbandingan bersamaan detil MRFE6S9135HR3 dari NXP Semiconductors dan MRFE6S9135HSR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MRFE6S9135HR3 MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L

MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L

MRFE6S9135HR3 ✓ Aktif
NXP Semiconductors
MRFE6S9135HSR3 MRFE6S9135HSR3 - 940MHz 39W RF Power LDMOS MOSFET | NXP

MRFE6S9135HSR3 - 940MHz 39W RF Power LDMOS MOSFET | NXP

MRFE6S9135HSR3 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MRFE6S9135HR3 MRFE6S9135HSR3
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) LDMOS (N-Channel Enhancement-Mode Lateral MOSFET)
Technology RF Power LDMOS —
Drain-Source Voltage (Rated) 66 V —
Typical Operating Voltage 28 V —
Output Power (Pout) 39 W (at 940 MHz, two-tone test) 39 W average (single W-CDMA, 940 MHz)
Power Gain (Gps) 21 dB (typical at 940 MHz) 21 dB
Drain Efficiency 63.3 % (typical at test conditions) [DATA_NEEDED: drain efficiency at 39 W W-CDMA]
Test Current 1 A 1 A
Operating Frequency Range Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) —
Test Frequency 940 MHz —
Package Type NI-880H-2L (ceramic flange) —
Tipe Mounting Screw-mount / bolt-down flange Through-hole / chassis-mount with flange bolt-down
ESD Protection (HBM) Class II (per JESD22-A114) —
ESD Protection (MM) Class A (per EIA/JESD22-A115) —
ESD Protection (CDM) Class IV (per JESD22-C101) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant per NXP product page
Lead Status Lead-containing (per digchip listing) —
Designed For Broadband commercial and industrial applications up to 1000 MHz —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Status — Active
Frequency — 940 MHz (designed up to 1000 MHz)
Test Voltage — 28 V
Drain-Source Voltage Rating — 66 V
Drain Current Rating — 10 µA (leakage spec from cross-reference)
Paket / Case — NI-880S (CASE 465B-03, STYLE 1), ceramic, straight leads
Input / Output Impedance — [DATA_NEEDED: input/output impedance at 940 MHz test condition]
Suhu Hubung Kerja — -40 C to +150 C (typical LDMOS rating; [DATA_NEEDED: exact datasheet Tj max])
Lead Free Status — Lead Free
Tingkat Sensitivitas Kekeringan (MSL) — [DATA_NEEDED: MSL rating from datasheet]
Packaging — Tape & Reel (suffix R3, 250-unit per reel)

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