MRFE6S9135HR3 vs MRFE6S9135HSR3 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRFE6S9135HR3 tarafından NXP Semiconductors ve MRFE6S9135HSR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRFE6S9135HR3 MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L

MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L

MRFE6S9135HR3 ✓ Aktif
NXP Semiconductors
MRFE6S9135HSR3 MRFE6S9135HSR3 - 940MHz 39W RF Power LDMOS MOSFET | NXP

MRFE6S9135HSR3 - 940MHz 39W RF Power LDMOS MOSFET | NXP

MRFE6S9135HSR3 ✓ Aktif

Özellik Karşılaştırması

Parametre MRFE6S9135HR3 MRFE6S9135HSR3
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Transistor Türü N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) LDMOS (N-Channel Enhancement-Mode Lateral MOSFET)
Technology RF Power LDMOS —
Drain-Source Voltage (Rated) 66 V —
Typical Operating Voltage 28 V —
Output Power (Pout) 39 W (at 940 MHz, two-tone test) 39 W average (single W-CDMA, 940 MHz)
Power Gain (Gps) 21 dB (typical at 940 MHz) 21 dB
Drain Efficiency 63.3 % (typical at test conditions) [DATA_NEEDED: drain efficiency at 39 W W-CDMA]
Test Current 1 A 1 A
Operating Frequency Range Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) —
Test Frequency 940 MHz —
Package Type NI-880H-2L (ceramic flange) —
Montaj Türü Screw-mount / bolt-down flange Through-hole / chassis-mount with flange bolt-down
ESD Protection (HBM) Class II (per JESD22-A114) —
ESD Protection (MM) Class A (per EIA/JESD22-A115) —
ESD Protection (CDM) Class IV (per JESD22-C101) —
RoHS Durumu [DATA_NEEDED: RoHS status] Compliant per NXP product page
Lead Status Lead-containing (per digchip listing) —
Designed For Broadband commercial and industrial applications up to 1000 MHz —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Status — Active
Frequency — 940 MHz (designed up to 1000 MHz)
Test Voltage — 28 V
Drain-Source Voltage Rating — 66 V
Drain Current Rating — 10 µA (leakage spec from cross-reference)
Paket / Kas — NI-880S (CASE 465B-03, STYLE 1), ceramic, straight leads
Input / Output Impedance — [DATA_NEEDED: input/output impedance at 940 MHz test condition]
İşletim Jant Sıcaklığı — -40 C to +150 C (typical LDMOS rating; [DATA_NEEDED: exact datasheet Tj max])
Lead Free Status — Lead Free
Nem Hassasiyet Seviyesi (MSL) — [DATA_NEEDED: MSL rating from datasheet]
Packaging — Tape & Reel (suffix R3, 250-unit per reel)

Dökümanlar & Kaynaklar

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