H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix
MPN: H5AN8G6NDJR ✓ AktifH5AN8G6NDJR Ringkasan
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded computing.
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, reliability, and power efficiency, making the device suitable for high-speed data transmission and robust operation in demanding environments.
The device supports a burst length of 8 and a burst chop of 4, with a CAS latency of 22 cycles at 3200 Mbps. It operates over a temperature range of 0°C to 85°C (TC) and is RoHS compliant. The 96-ball FBGA package with a 0.8mm ball pitch enables compact PCB layouts, while the 1.2V supply reduces power consumption compared to previous generations.
Typical applications include main memory for servers, high-performance computing, networking equipment, and industrial control systems. The high density and bandwidth make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers and AI accelerators.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 3200 Mbps. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Alternatif penggantian untuk H5AN8G6NDJR — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Variasi di dalam seri ini
Model-series yang sama yang kompatibel dengan penggantian H5AN8G6NDJR (sama faktor bentuk dan footprint) — berbeda di dalam Package, Data Rate, Operating Temperature, Memory Size, Burst Length.
H5AN8G6NDJR-XNC
✅ Drop-InKontak untuk harga
Lihat Datasheet →H5AN8G6NCJR-xxC
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →K4A8G165WB-BCTD
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →MT40A512M16TB-062E:R
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →K4A8G165WB-BCRC
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →MT40A512M16TB-062E:IT
✅ Drop-In ⚠️ Spesifikasi Tidak Disahkan📋 Alternatif referensi (tidak dalam katalog)
H5AN8G6NDJR Rating Maksimal & Karakteristik Listrik
| Tipe Memori | DDR4 SDRAM |
| Density | 8 Gb |
| Organisasi | 512M x 16 |
| Laju Data | 3200 Mbps (DDR4-3200) |
| Tegangan Pemuat | 1.2 V |
| Paket | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V |
| Maximum Operating Temperature | 85 °C |
| Burst Length | 8 (BL8), 4 (BC4) |
| Latensi CAS | 22 cycles (at 3200 Mbps) |
| Access Mode | Multi Bank Page Burst |
| JESD-30 Code | R-PBGA-B96 |
| RoHS | Compliant |
| Fitur | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
Konfigurasi Pin H5AN8G6NDJR
| Pin produk A1 | VDD — Power supply (1.2V) |
| Pin produk A2 | DQ0 — Data input/output 0 |
| Pin produk A3 | DQ1 — Data input/output 1 |
| Pin produk A4 | VSS — Ground |
| Pin produk A5 | DQ2 — Data input/output 2 |
| Pin produk A6 | DQ3 — Data input/output 3 |
| Pin produk A7 | VDD — Power supply (1.2V) |
| Pin produk A8 | DQ4 — Data input/output 4 |
| Pin produk A9 | DQ5 — Data input/output 5 |
| Pin produk A10 | VSS — Ground |
| Pin produk A11 | DQ6 — Data input/output 6 |
| Pin produk A12 | DQ7 — Data input/output 7 |
| Pin produk B1 | VSS — Ground |
| Pin produk B2 | DQ8 — Data input/output 8 |
| Pin produk B3 | DQ9 — Data input/output 9 |
| Pin produk B4 | VDD — Power supply (1.2V) |
| Pin produk B5 | DQ10 — Data input/output 10 |
| Pin produk B6 | DQ11 — Data input/output 11 |
| Pin produk B7 | VSS — Ground |
| Pin produk B8 | DQ12 — Data input/output 12 |
| Pin produk B9 | DQ13 — Data input/output 13 |
| Pin produk B10 | VDD — Power supply (1.2V) |
| Pin produk B11 | DQ14 — Data input/output 14 |
| Pin produk B12 | DQ15 — Data input/output 15 |
| Pin produk C1 | VDD — Power supply (1.2V) |
| Pin produk C2 | DQS0 — Data strobe 0 |
| Pin produk C3 | DQS0# — Data strobe 0 complement |
| Pin produk C4 | VSS — Ground |
| Pin produk C5 | DQS1 — Data strobe 1 |
| Pin produk C6 | DQS1# — Data strobe 1 complement |
| Pin produk C7 | VDD — Power supply (1.2V) |
| Pin produk C8 | DQS2 — Data strobe 2 |
| Pin produk C9 | DQS2# — Data strobe 2 complement |
| Pin produk C10 | VSS — Ground |
| Pin produk C11 | DQS3 — Data strobe 3 |
| Pin produk C12 | DQS3# — Data strobe 3 complement |
| Pin produk D1 | VSS — Ground |
| Pin produk D2 | DM0 — Data mask 0 |
| Pin produk D3 | DM1 — Data mask 1 |
| Pin produk D4 | VDD — Power supply (1.2V) |
| Pin produk D5 | DM2 — Data mask 2 |
| Pin produk D6 | DM3 — Data mask 3 |
| Pin produk D7 | VSS — Ground |
| Pin produk D8 | A0 — Address input 0 |
| Pin produk D9 | A1 — Address input 1 |
| Pin produk D10 | VDD — Power supply (1.2V) |
| Pin produk D11 | A2 — Address input 2 |
| Pin produk D12 | A3 — Address input 3 |
| Pin produk E1 | VDD — Power supply (1.2V) |
| Pin produk E2 | A4 — Address input 4 |
| Pin produk E3 | A5 — Address input 5 |
| Pin produk E4 | VSS — Ground |
| Pin produk E5 | A6 — Address input 6 |
| Pin produk E6 | A7 — Address input 7 |
| Pin produk E7 | VDD — Power supply (1.2V) |
| Pin produk E8 | A8 — Address input 8 |
| Pin produk E9 | A9 — Address input 9 |
| Pin produk E10 | VSS — Ground |
| Pin produk E11 | A10/AP — Address input 10 / auto precharge |
| Pin produk E12 | A11 — Address input 11 |
| Pin produk F1 | VSS — Ground |
| Pin produk F2 | A12 — Address input 12 |
| Pin produk F3 | A13 — Address input 13 |
| Pin produk F4 | VDD — Power supply (1.2V) |
| Pin produk F5 | A14 — Address input 14 |
| Pin produk F6 | A15 — Address input 15 |
| Pin produk F7 | VSS — Ground |
| Pin produk F8 | BA0 — Bank address 0 |
| Pin produk F9 | BA1 — Bank address 1 |
| Pin produk F10 | VDD — Power supply (1.2V) |
| Pin produk F11 | BA2 — Bank address 2 |
| Pin produk F12 | BG0 — Bank group 0 |
| Pin produk G1 | VDD — Power supply (1.2V) |
| Pin produk G2 | BG1 — Bank group 1 |
| Pin produk G3 | CK — Clock input |
| Pin produk G4 | CK# — Clock input complement |
| Pin produk G5 | VSS — Ground |
| Pin produk G6 | CKE — Clock enable |
| Pin produk G7 | VDD — Power supply (1.2V) |
| Pin produk G8 | CS# — Chip select |
| Pin produk G9 | RAS# — Row address strobe |
| Pin produk G10 | VSS — Ground |
| Pin produk G11 | CAS# — Column address strobe |
| Pin produk G12 | WE# — Write enable |
| Pin produk H1 | VSS — Ground |
| Pin produk H2 | ODT0 — On-die termination 0 |
| Pin produk H3 | ODT1 — On-die termination 1 |
| Pin produk H4 | VDD — Power supply (1.2V) |
| Pin produk H5 | RESET# — Asynchronous reset |
| Pin produk H6 | VSS — Ground |
| Pin produk H7 | VDD — Power supply (1.2V) |
| Pin produk H8 | ZQ — ZQ calibration |
| Pin produk H9 | VSS — Ground |
| Pin produk H10 | VDD — Power supply (1.2V) |
| Pin produk H11 | VSS — Ground |
| Pin produk H12 | VDD — Power supply (1.2V) |
Aplikasi Umum
H5AN8G6NDJR cocok untuk 6 aplikasis: Server Main Memory, Networking Equipment, Industrial Control Systems, High-Performance Computing, Embedded Systems, Data Center Storage.
Server Main Memory
The H5AN8G6NDJR provides 8Gb density and 3200 Mbps bandwidth, making it ideal for server main memory. Its high speed and low power (1.2V) enhance server performance and energy efficiency. In a server DIMM, multiple devices are combined to achieve the desired capacity and ECC support. The x16 organization allows for high bandwidth per chip, reducing the number of devices needed for a given capacity. The device's auto self-refresh and dynamic ODT features improve signal integrity and reliability in multi-rank configurations. When designing server memory, ensure proper termination and layout to maintain signal integrity at 3200 Mbps.
Direkomendasikan
Networking Equipment
In networking equipment such as routers and switches, the H5AN8G6NDJR provides high-bandwidth memory for packet buffering and forwarding tables. Its 3200 Mbps data rate ensures fast processing of network traffic, while the 1.2V supply reduces power consumption in always-on equipment. The device's CRC feature enhances data integrity, critical for network reliability. The compact FBGA-96 package allows for dense PCB layouts, saving board space. When used in networking designs, consider the thermal environment and ensure adequate cooling to maintain the 0°C to 85°C operating range.
Direkomendasikan
Industrial Control Systems
The H5AN8G6NDJR is suitable for industrial control systems requiring reliable, high-density memory. Its wide operating temperature range (0°C to 85°C) and features like auto self-refresh and write leveling ensure stable operation in harsh environments. The device's low power consumption is beneficial for systems with limited power budgets. In industrial applications, the memory is often used for data logging, real-time control, and HMI interfaces. The FBGA-96 package is robust and suitable for vibration-prone environments. Designers should ensure proper power decoupling and follow layout guidelines to minimize noise.
Direkomendasikan
High-Performance Computing
In HPC systems, the H5AN8G6NDJR delivers the high bandwidth and capacity needed for complex simulations and data analysis. Its 3200 Mbps data rate and 8Gb density enable large memory pools with fast access times. The device's low latency and high throughput are critical for parallel processing workloads. The x16 organization allows for efficient memory channel utilization. When designing HPC memory subsystems, consider the total memory bandwidth and capacity requirements, and ensure the memory controller supports the device's timing parameters.
Direkomendasikan
Embedded Systems
The H5AN8G6NDJR is used in embedded systems requiring high-density memory with low power consumption. Its 1.2V supply and auto self-refresh feature help extend battery life in portable devices. The compact FBGA-96 package is ideal for space-constrained designs. The device's features like data mask and write leveling support reliable operation in embedded applications. When integrating this memory, ensure the host processor's memory controller is compatible with DDR4-3200 and the x16 organization.
Direkomendasikan
Data Center Storage
In data center storage systems, the H5AN8G6NDJR provides high-speed memory for caching and metadata management. Its high bandwidth and low latency improve storage performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's CRC feature ensures data integrity, critical for storage reliability. The FBGA-96 package allows for high-density memory modules, maximizing storage capacity per server. When designing storage systems, consider the memory requirements for caching algorithms and ensure adequate cooling.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk H5AN8G6NDJR — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | H5AN8G6NDJR-XNC | K4A8G165WB-BCTD | MT40A512M16TB-062E:R |
|---|---|---|---|---|
| Package | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) |
| Brand | SK hynix | SK hynix | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Diferensiator Kunci
- High density and bandwidth (vsK4A8G165WB-BCTD)
- Advanced features (vsMT40A512M16TB-062E:R)
- Low power consumption (vsK4A8G165WB-BCTD)
Catatan Desain
For DDR4-3200 operation, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Use ground planes beneath the memory device to minimize noise. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the SK hynix datasheet for signal integrity.
The H5AN8G6NDJR operates up to 85°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For high-power applications, consider thermal vias under the package.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Verify that the memory controller supports DDR4-3200 and the x16 organization. Incorrect termination or missing ZQ resistor can cause signal integrity issues.
Informasi Konformitas
RoHS compliant per LCSC and JLCPCB listings. Other compliance data not specified in verified sources.
