MX30UF4G28AB vs MX30UF4G26AB Perbandingan

Perbandingan bersamaan detil MX30UF4G28AB dari Macronix dan MX30UF4G26AB dari Macronix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Macronix
MX30UF4G26AB MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MX30UF4G28AB MX30UF4G26AB
Merek Macronix Macronix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori FLASH - NAND (SLC) FLASH - NAND (SLC)
Ukuran Memori 4 Gbit —
Memory Organization 512M x 8 256M x 16
Antarmuka Parallel (asynchronous) Parallel (Asynchronous NAND)
Bus Width x8 / x16 selectable —
Access Time (tRC) 25 ns (typical) —
Supply Voltage (VCC) 1.7 V to 1.95 V (1.8 V typ) —
Technology SLC (Single-Level Cell) NAND —
Page Size 2048 bytes + 64 bytes spare (x8) [DATA_NEEDED: page size in bytes]
Block Size [DATA_NEEDED: block size in pages] [DATA_NEEDED: block size in pages]
Paket 48-pin TSOP-I (TI) / 63-ball VFBGA (XKI) 63-VFBGA (9 x 11 mm)
Suhu Kerja -40 °C to +85 °C (industrial) -40 C to +85 C
Tipe Mounting Surface Mount Surface Mount
Program/Erase Cycles [DATA_NEEDED: endurance per block] —
Data Retention [DATA_NEEDED: retention years] [DATA_NEEDED: data retention years]
Status RoHS Compliant Compliant
Level MSL 3 (per JEDEC J-STD-020, typical for TSOP) 3
Memory Density — 4 Gbit (512 MB)
Supply Voltage (Vcc) — 1.7 V to 1.95 V
Access Time — 25 ns
Compliance Standard — ONFI 1.0
Cell Technology — Single-Level Cell (SLC)
Endurance (P/E Cycles) — [DATA_NEEDED: typical endurance per block]

Spek dan Sumber

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