MX30UF4G28AB vs MX30UF4G26AB Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MX30UF4G28AB disebabkan oleh Macronix dan MX30UF4G26AB disebabkan oleh Macronix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Macronix
MX30UF4G26AB MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB - 1.8V 4Gbit SLC NAND Flash | Macronix

MX30UF4G26AB ✓ Aktif

Pengandingan Spesifikasi

Parametr MX30UF4G28AB MX30UF4G26AB
Merek Macronix Macronix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan FLASH - NAND (SLC) FLASH - NAND (SLC)
Saiz Ingatan 4 Gbit —
Memory Organization 512M x 8 256M x 16
Antaramuka Parallel (asynchronous) Parallel (Asynchronous NAND)
Bus Width x8 / x16 selectable —
Access Time (tRC) 25 ns (typical) —
Supply Voltage (VCC) 1.7 V to 1.95 V (1.8 V typ) —
Technology SLC (Single-Level Cell) NAND —
Page Size 2048 bytes + 64 bytes spare (x8) [DATA_NEEDED: page size in bytes]
Block Size [DATA_NEEDED: block size in pages] [DATA_NEEDED: block size in pages]
Kemasan 48-pin TSOP-I (TI) / 63-ball VFBGA (XKI) 63-VFBGA (9 x 11 mm)
Suhu Operasi -40 °C to +85 °C (industrial) -40 C to +85 C
Jenis Pemasangan Surface Mount Surface Mount
Program/Erase Cycles [DATA_NEEDED: endurance per block] —
Data Retention [DATA_NEEDED: retention years] [DATA_NEEDED: data retention years]
Status RoHS Compliant Compliant
Aras MSL 3 (per JEDEC J-STD-020, typical for TSOP) 3
Memory Density — 4 Gbit (512 MB)
Supply Voltage (Vcc) — 1.7 V to 1.95 V
Access Time — 25 ns
Compliance Standard — ONFI 1.0
Cell Technology — Single-Level Cell (SLC)
Endurance (P/E Cycles) — [DATA_NEEDED: typical endurance per block]

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