PDRQL8KCBF12-00 vs K4RAH086VB-BCWM Perbandingan
Perbandingan bersamaan detil PDRQL8KCBF12-00 dari Samsung Electronics dan K4RAH086VB-BCWM dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | PDRQL8KCBF12-00 | K4RAH086VB-BCWM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $44,55 |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| Organisasi | 2G x 8 | 2G x 8 |
| Laju Data | 7200 MT/s | 5600 Mbps |
| Tegangan Pemuat | 1.1 V | 1.1 V |
| Paket | FBGA | FBGA-82 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: Operating temperature range] | Commercial temperature range (per datasheet) |
| Burst Length | 16 (BL16), burst chop 8 (BC8) | 32 (BL32, DDR5 standard) |
| On-die ECC | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| Antarmuka | Pseudo-differential DQ | DDR5 (parallel) |
| Process Technology | 10nm-class | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Ukuran Memori | — | 16 Gb |
| Technology | — | DRAM (volatile) |
| Speed Grade | — | BCWM |
| ECC | — | On-die ECC |
| Status Lingkungan Hidup | — | Active |
| Sub-channel Architecture | — | Dual independent 32-bit sub-channels (per DDR5 spec) |