PDRQLAKCDF12-00 vs K4RAH165VB-BCQK Perbandingan
Perbandingan bersamaan detil PDRQLAKCDF12-00 dari Samsung Electronics dan K4RAH165VB-BCQK dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ AktifSamsung Electronics
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
K4RAH165VB-BCQK ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | PDRQLAKCDF12-00 | K4RAH165VB-BCQK |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | — |
| Organisasi | 1G x 16 | — |
| Laju Data | 7200 Mbps per pin | 4800 Mbps |
| Speed Bin | DDR5-7200 | — |
| Operating Voltage | 1.1 V | — |
| Paket | 102-ball FBGA | 106-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Generation | DDR5 (improved from 6400 Mbps generation) | — |
| Antarmuka | JEDEC DDR5 | — |
| Package Height | [DATA_NEEDED: package height] | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| tCK / Cycle Time | [DATA_NEEDED: clock cycle time] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Ukuran Memori | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.1 V |
| Error Correction | — | On-die ECC |
| Fitur | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Memory Format | — | DRAM (volatile) |
| Packaging | — | Tray |
| Status Lingkungan Hidup | — | Active |
| Unit Price | — | [DATA_NEEDED: unit price] |