PDRQLAKCDF12-00 vs K4RAH165VB-BCQK Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci PDRQLAKCDF12-00 disebabkan oleh Samsung Electronics dan K4RAH165VB-BCQK disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
PDRQLAKCDF12-00 PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics

PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics

PDRQLAKCDF12-00 ✓ Aktif
Samsung Electronics
K4RAH165VB-BCQK K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung

K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung

K4RAH165VB-BCQK ✓ Aktif

Pengandingan Spesifikasi

Parametr PDRQLAKCDF12-00 K4RAH165VB-BCQK
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR5 SDRAM DDR5 SDRAM
Density 16 Gbit —
Organisasi 1G x 16 —
Kadar Data 7200 Mbps per pin 4800 Mbps
Speed Bin DDR5-7200 —
Operating Voltage 1.1 V —
Kemasan 102-ball FBGA 106-ball FBGA
Jenis Pemasangan Surface Mount Surface Mount
Generation DDR5 (improved from 6400 Mbps generation) —
Antaramuka JEDEC DDR5 —
Package Height [DATA_NEEDED: package height] —
Suhu Operasi [DATA_NEEDED: operating temperature range] 0C to +85C
tCK / Cycle Time [DATA_NEEDED: clock cycle time] —
Latensi CAS [DATA_NEEDED: CAS latency] —
Standby Current [DATA_NEEDED: standby current] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Saiz Ingatan — 16 Gb
Memory Organization — 1G x 16
Memory Interface — Parallel
Supply Voltage (VDD) — 1.1 V
Error Correction — On-die ECC
Ciri-ciri — Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration
Memory Format — DRAM (volatile)
Packaging — Tray
Status Lingkungan Hidup — Active
Unit Price — [DATA_NEEDED: unit price]

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga