UCC21550ADWR vs UCC21550BQDWRQ1 Perbandingan

Perbandingan bersamaan detil UCC21550ADWR dari Texas Instruments dan UCC21550BQDWRQ1 dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum UCC21550ADWR UCC21550BQDWRQ1
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Number of Channels 2 (dual) 2
Configuration Dual low-side, dual high-side, or half-bridge Two low-side / two high-side / half-bridge
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Reinforced, capacitive coupling Capacitive coupling
Isolation Voltage 5000 Vrms 5000 Vrms
CMTI > 125 V/ns —
Max VDD Output Supply 25 V —
UVLO Threshold Option 5 V —
Dead Time Programmable Programmable (external resistor)
Disable Function Yes (DISABLE pin) Yes
Driven Devices Power MOSFET, SiC, GaN, IGBT —
Junction Temperature Range -40C to +150C —
Paket 16-SOIC (DW) 16-SOIC (DW)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant —
Driver Type — Dual-channel reinforced isolated gate driver
Isolation Grade — Reinforced isolation
UVLO Threshold — 8 V (driver supply)
Target Transistors — Power MOSFET, SiC MOSFET, GaN FET, IGBT
Automotive Qualification — AEC-Q100 qualified (Q1)
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Tegangan Pemuat Kerja — [DATA_NEEDED: VCCI / VDD operating range]
Common-Mode Transient Immunity — [DATA_NEEDED: CMTI value]

Spek dan Sumber

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