UCC21550ADWR vs UCC21550BQDWRQ1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci UCC21550ADWR disebabkan oleh Texas Instruments dan UCC21550BQDWRQ1 disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr UCC21550ADWR UCC21550BQDWRQ1
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Number of Channels 2 (dual) 2
Configuration Dual low-side, dual high-side, or half-bridge Two low-side / two high-side / half-bridge
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Reinforced, capacitive coupling Capacitive coupling
Isolation Voltage 5000 Vrms 5000 Vrms
CMTI > 125 V/ns —
Max VDD Output Supply 25 V —
UVLO Threshold Option 5 V —
Dead Time Programmable Programmable (external resistor)
Disable Function Yes (DISABLE pin) Yes
Driven Devices Power MOSFET, SiC, GaN, IGBT —
Junction Temperature Range -40C to +150C —
Kemasan 16-SOIC (DW) 16-SOIC (DW)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Driver Type — Dual-channel reinforced isolated gate driver
Isolation Grade — Reinforced isolation
UVLO Threshold — 8 V (driver supply)
Target Transistors — Power MOSFET, SiC MOSFET, GaN FET, IGBT
Automotive Qualification — AEC-Q100 qualified (Q1)
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Tegangan Pemberi Arus Operasi — [DATA_NEEDED: VCCI / VDD operating range]
Common-Mode Transient Immunity — [DATA_NEEDED: CMTI value]

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