UCC21550ADWR vs UCC21550BQDWRQ1 比較

詳細並排比較 UCC21550ADWR 由 Texas Instruments 與 UCC21550BQDWRQ1 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
UCC21550ADWR UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments

UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments

UCC21550ADWR ✓ 啟用中
Texas Instruments
UCC21550BQDWRQ1 UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments

UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments

UCC21550BQDWRQ1 ✓ 啟用中

規格比較

參數 UCC21550ADWR UCC21550BQDWRQ1
品牌 Texas Instruments Texas Instruments
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Number of Channels 2 (dual) 2
Configuration Dual low-side, dual high-side, or half-bridge Two low-side / two high-side / half-bridge
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Reinforced, capacitive coupling Capacitive coupling
Isolation Voltage 5000 Vrms 5000 Vrms
CMTI > 125 V/ns —
Max VDD Output Supply 25 V —
UVLO Threshold Option 5 V —
Dead Time Programmable Programmable (external resistor)
Disable Function Yes (DISABLE pin) Yes
Driven Devices Power MOSFET, SiC, GaN, IGBT —
Junction Temperature Range -40C to +150C —
封裝 16-SOIC (DW) 16-SOIC (DW)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant —
Driver Type — Dual-channel reinforced isolated gate driver
Isolation Grade — Reinforced isolation
UVLO Threshold — 8 V (driver supply)
Target Transistors — Power MOSFET, SiC MOSFET, GaN FET, IGBT
Automotive Qualification — AEC-Q100 qualified (Q1)
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
工作電源電壓 — [DATA_NEEDED: VCCI / VDD operating range]
Common-Mode Transient Immunity — [DATA_NEEDED: CMTI value]

資料表與資源

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