UCC21550BDWR vs UCC21550BQDWRQ1 Perbandingan

Perbandingan bersamaan detil UCC21550BDWR dari Texas Instruments dan UCC21550BQDWRQ1 dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum UCC21550BDWR UCC21550BQDWRQ1
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Konfigurasi Output Dual-channel (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling, reinforced isolation Capacitive coupling
Isolation Voltage 5000 Vrms 5000 Vrms
CMTI (Common-Mode Transient Immunity) > 125 V/ns —
VDD Output Supply Range Up to 25 V —
UVLO Threshold 8 V (VDD UVLO) 8 V (driver supply)
Programmable Dead Time Yes —
Disable Function Yes Yes
Junction Temperature Range -40 C to +150 C —
Paket 16-SOIC (DW) 16-SOIC (DW)
Tipe Mounting Surface Mount Surface Mount
Driven Devices Power MOSFET, SiC MOSFET, GaN FET, IGBT —
Status RoHS [DATA_NEEDED: RoHS status] —
Driver Type — Dual-channel reinforced isolated gate driver
Isolation Grade — Reinforced isolation
Number of Channels — 2
Configuration — Two low-side / two high-side / half-bridge
Dead Time — Programmable (external resistor)
Target Transistors — Power MOSFET, SiC MOSFET, GaN FET, IGBT
Automotive Qualification — AEC-Q100 qualified (Q1)
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Tegangan Pemuat Kerja — [DATA_NEEDED: VCCI / VDD operating range]
Common-Mode Transient Immunity — [DATA_NEEDED: CMTI value]

Spek dan Sumber

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