UCC21550BDWR vs UCC21550BQDWRQ1 比較
詳細並排比較 UCC21550BDWR 由 Texas Instruments 與 UCC21550BQDWRQ1 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 啟用中Texas Instruments
UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments
UCC21550BQDWRQ1 ✓ 啟用中規格比較
| 參數 | UCC21550BDWR | UCC21550BQDWRQ1 |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 輸出配置 | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | Capacitive coupling |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | 8 V (driver supply) |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | Yes |
| Junction Temperature Range | -40 C to +150 C | — |
| 封裝 | 16-SOIC (DW) | 16-SOIC (DW) |
| 安裝類型 | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| Driver Type | — | Dual-channel reinforced isolated gate driver |
| Isolation Grade | — | Reinforced isolation |
| Number of Channels | — | 2 |
| Configuration | — | Two low-side / two high-side / half-bridge |
| Dead Time | — | Programmable (external resistor) |
| Target Transistors | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Automotive Qualification | — | AEC-Q100 qualified (Q1) |
| 工作溫度範圍 | — | [DATA_NEEDED: operating temperature range] |
| 工作電源電壓 | — | [DATA_NEEDED: VCCI / VDD operating range] |
| Common-Mode Transient Immunity | — | [DATA_NEEDED: CMTI value] |