UCC21550BDWR vs UCC21550BQDWRQ1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci UCC21550BDWR disebabkan oleh Texas Instruments dan UCC21550BQDWRQ1 disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr UCC21550BDWR UCC21550BQDWRQ1
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Konfigurasi Output Dual-channel (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling, reinforced isolation Capacitive coupling
Isolation Voltage 5000 Vrms 5000 Vrms
CMTI (Common-Mode Transient Immunity) > 125 V/ns —
VDD Output Supply Range Up to 25 V —
UVLO Threshold 8 V (VDD UVLO) 8 V (driver supply)
Programmable Dead Time Yes —
Disable Function Yes Yes
Junction Temperature Range -40 C to +150 C —
Kemasan 16-SOIC (DW) 16-SOIC (DW)
Jenis Pemasangan Surface Mount Surface Mount
Driven Devices Power MOSFET, SiC MOSFET, GaN FET, IGBT —
Status RoHS [DATA_NEEDED: RoHS status] —
Driver Type — Dual-channel reinforced isolated gate driver
Isolation Grade — Reinforced isolation
Number of Channels — 2
Configuration — Two low-side / two high-side / half-bridge
Dead Time — Programmable (external resistor)
Target Transistors — Power MOSFET, SiC MOSFET, GaN FET, IGBT
Automotive Qualification — AEC-Q100 qualified (Q1)
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Tegangan Pemberi Arus Operasi — [DATA_NEEDED: VCCI / VDD operating range]
Common-Mode Transient Immunity — [DATA_NEEDED: CMTI value]

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