UCC21550BDWR vs UCC21710QDWRQ1 Perbandingan

Perbandingan bersamaan detil UCC21550BDWR dari Texas Instruments dan UCC21710QDWRQ1 dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Texas Instruments
UCC21710QDWRQ1 UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum UCC21550BDWR UCC21710QDWRQ1
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $2,74
Konfigurasi Output Dual-channel (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A +10 A
Peak Sink Current 6 A -10 A
Isolation Type Capacitive coupling, reinforced isolation —
Isolation Voltage 5000 Vrms —
CMTI (Common-Mode Transient Immunity) > 125 V/ns —
VDD Output Supply Range Up to 25 V —
UVLO Threshold 8 V (VDD UVLO) —
Programmable Dead Time Yes —
Disable Function Yes —
Junction Temperature Range -40 C to +150 C —
Paket 16-SOIC (DW) 16-SOIC (DW) wide-body
Tipe Mounting Surface Mount Surface Mount
Driven Devices Power MOSFET, SiC MOSFET, GaN FET, IGBT —
Status RoHS [DATA_NEEDED: RoHS status] —
Fungsi — Single-channel isolated gate driver
Isolation Technology — SiO2 capacitive coupling
Isolation Rating (rms) — 5.7 kVrms (reinforced)
Working Voltage (rms) — 1.5 kVrms
Target Switches — SiC MOSFETs up to 1700 V, IGBTs
Propagation Delay (typ.) — 60 ns
CMTI (min.) — 100 V/ns
Output Supply Voltage (VCC2/VEE2) — 12.8 V to 18 V
Input Supply Voltage (VDD/VCCI) — 3 V to 5.5 V
Protection Features — DESAT, Miller clamp, UVLO, FLT, soft turn-off
Rentang Suhu Kerja — -40 C to +150 C
Automotive Qualification — AEC-Q100
RoHS — Compliant

Spek dan Sumber

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