W25M512JVEIQ vs AT45DB041D-SU Perbandingan
Perbandingan bersamaan detil W25M512JVEIQ dari Winbond dan AT45DB041D-SU dari Renesas Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Renesas Electronics
AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas
AT45DB041D-SU ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | W25M512JVEIQ | AT45DB041D-SU |
|---|---|---|
| Merek | Winbond | Renesas Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | FLASH - NOR Memory IC (Multichip Package) | DataFLASH NOR |
| Ukuran Memori | 512 Mbit (64 MB) | — |
| Organisasi | 64M x 8 | 2,048 pages x 264 bytes (binary) or 256 bytes (standard) |
| Antarmuka | SPI, Dual SPI, Quad SPI | SPI, RapidS (SPI modes 0 and 3) |
| Max Clock Frequency | 104 MHz | — |
| Operating Voltage | 3V / 3.3V | — |
| Access Time | 7 ns | — |
| Sector Size | 4KB Uniform Sector | — |
| Paket | 8-WSON (8mm x 6mm) with exposed pad | 8-pin SOIC (150 mil, EIAJ) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase cycles] | — |
| Data Retention | [DATA_NEEDED: Data retention] | 20 years minimum |
| Write Protect | Hardware /WP pin | — |
| Hold Pin | /HOLD supported | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Level MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Memory Format | — | FLASH |
| Density | — | 4 Mbit (4,325,376 bits) |
| Frekuensi Bawah Maximum | — | 66 MHz |
| Tegangan Pemuat | — | 2.7 V to 3.6 V |
| SRAM Data Buffers | — | 2 x 264 bytes |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Endurance | — | 100,000 program/erase cycles per page |
| Security Register | — | 128 bytes |
| Lead-Free | — | Yes |