W25M512JVEIQ vs AT45DB041D-SU Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci W25M512JVEIQ disebabkan oleh Winbond dan AT45DB041D-SU disebabkan oleh Renesas Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Renesas Electronics
AT45DB041D-SU AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU ✓ Aktif

Pengandingan Spesifikasi

Parametr W25M512JVEIQ AT45DB041D-SU
Merek Winbond Renesas Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan FLASH - NOR Memory IC (Multichip Package) DataFLASH NOR
Saiz Ingatan 512 Mbit (64 MB) —
Organisasi 64M x 8 2,048 pages x 264 bytes (binary) or 256 bytes (standard)
Antaramuka SPI, Dual SPI, Quad SPI SPI, RapidS (SPI modes 0 and 3)
Max Clock Frequency 104 MHz —
Operating Voltage 3V / 3.3V —
Access Time 7 ns —
Sector Size 4KB Uniform Sector —
Kemasan 8-WSON (8mm x 6mm) with exposed pad 8-pin SOIC (150 mil, EIAJ)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi [DATA_NEEDED: Operating Temperature range] [DATA_NEEDED: operating temperature range]
Program/Erase Endurance [DATA_NEEDED: Program/Erase cycles] —
Data Retention [DATA_NEEDED: Data retention] 20 years minimum
Write Protect Hardware /WP pin —
Hold Pin /HOLD supported —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Aras MSL [DATA_NEEDED: Moisture Sensitivity Level] —
Memory Format — FLASH
Density — 4 Mbit (4,325,376 bits)
Frekuensi Klock Maksimum — 66 MHz
Tegangan Pemberi Arus — 2.7 V to 3.6 V
SRAM Data Buffers — 2 x 264 bytes
Page Program Time — [DATA_NEEDED: page program time]
Endurance — 100,000 program/erase cycles per page
Security Register — 128 bytes
Lead-Free — Yes

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