W25M512JVEIQ vs AT45DB041D-SU 比較
詳細並排比較 W25M512JVEIQ 由 Winbond 與 AT45DB041D-SU 由 Renesas Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | W25M512JVEIQ | AT45DB041D-SU |
|---|---|---|
| 品牌 | Winbond | Renesas Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | FLASH - NOR Memory IC (Multichip Package) | DataFLASH NOR |
| 記憶體容量 | 512 Mbit (64 MB) | — |
| 組織 | 64M x 8 | 2,048 pages x 264 bytes (binary) or 256 bytes (standard) |
| 介面 | SPI, Dual SPI, Quad SPI | SPI, RapidS (SPI modes 0 and 3) |
| Max Clock Frequency | 104 MHz | — |
| Operating Voltage | 3V / 3.3V | — |
| Access Time | 7 ns | — |
| Sector Size | 4KB Uniform Sector | — |
| 封裝 | 8-WSON (8mm x 6mm) with exposed pad | 8-pin SOIC (150 mil, EIAJ) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: Operating Temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: Program/Erase cycles] | — |
| Data Retention | [DATA_NEEDED: Data retention] | 20 years minimum |
| Write Protect | Hardware /WP pin | — |
| Hold Pin | /HOLD supported | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等級 | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Memory Format | — | FLASH |
| Density | — | 4 Mbit (4,325,376 bits) |
| 最大時脈頻率 | — | 66 MHz |
| 供應電壓 | — | 2.7 V to 3.6 V |
| SRAM Data Buffers | — | 2 x 264 bytes |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Endurance | — | 100,000 program/erase cycles per page |
| Security Register | — | 128 bytes |
| Lead-Free | — | Yes |