K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
MPN: K4A8G165WB-BIRC ✓ Aktif| Kwantitas | Harga Satuan | Lengkap |
|---|---|---|
| 1 | $40.78 | $40,78 |
| 10 | $38.5 | $385,00 |
| 100 | $36.2 | $3.620,00 |
| 500 | $34 | $17.000,00 |
| 1.000 | $32.5 | $32.500,00 |
K4A8G165WB-BIRC Ringkasan
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower power consumption compared to DDR3. It achieves data rates up to 3200 Mbps and operates at 1.2V, reducing power by 25% compared to DDR3's 1.5V. DDR4 is a critical component in modern computing, networking, and embedded systems, providing the high bandwidth needed for processors, AI accelerators, and high-speed data processing.
Key features of the K4A8G165WB-BIRC0 include a 2400 Mbps data rate, 8Gb density, and a 512M x 16 organization. The device supports on-die termination (ODT), programmable read/write latency, and burst length of 8, ensuring signal integrity and efficient data transfer. Its 96-ball FBGA package offers a compact footprint, and the -40°C to +95°C operating temperature range enables use in harsh environments.
Technically, this DDR4 SDRAM utilizes Samsung's advanced B-die process technology, which provides excellent timing margins and overclocking headroom. The device features a 1.2V core and I/O supply, with an on-chip ECC option (not available on this variant) and a pseudo-open-drain interface. It supports a burst length of 8 and a burst chop of 4, with programmable CAS latency (CL) values of 15, 16, and 17 cycles at 2400 Mbps.
Typical applications include high-performance computing, servers, networking equipment, industrial automation, and automotive infotainment systems. Its high density and speed make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-resolution graphics.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2400 Mbps. The device requires a stable 1.2V supply and a reference voltage (VREF) for optimal operation.
Alternatif penggantian untuk K4A8G165WB-BIRC — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Alat Perbandingan Cepat — Pilih bagian alternatif untuk perbandingan paralel:
K4A8G165WC-BCRC
Kontak untuk harga
Lihat Datasheet →H5TC4G63AFR-PBA
✗ Habis Stok
$3.9773 / Satuan
Lihat Datasheet →K4A8G165WB-BIRG
📋 Alternatif referensi (tidak dalam katalog)
K4A8G165WB-BIRH
📋 Alternatif referensi (tidak dalam katalog)
MT40A1G8SA-075E:B:A
📋 Alternatif referensi (tidak dalam katalog)
K4A8G165WB-BIRC Rating Maksimal & Karakteristik Listrik
| Tipe Memori | DDR4 SDRAM |
| Density | 8 Gb |
| Organisasi | 512M x 16 |
| Laju Data | 2400 Mbps |
| Tegangan Pemuat | 1.2 V |
| Suhu Kerja | -40°C to +95°C |
| Paket | 96-FBGA |
| Latensi CAS | 15, 16, 17 |
| Burst Length | 8 (BL8) and 4 (BC4) |
| Antarmuka | Pseudo-open-drain |
| On-Die Termination | Yes |
| Refresh | Auto-refresh and self-refresh |
| Row Address | 16K |
| Column Address | 1K |
| RoHS | Compliant |
Konfigurasi Pin K4A8G165WB-BIRC
| Pin produk A1 | VDD — Power supply |
| Pin produk A2 | DQ0 — Data input/output 0 |
| Pin produk A3 | DQ1 — Data input/output 1 |
| Pin produk A4 | VSS — Ground |
| Pin produk A5 | DQ2 — Data input/output 2 |
| Pin produk A6 | DQ3 — Data input/output 3 |
| Pin produk A7 | VDD — Power supply |
| Pin produk A8 | DQ4 — Data input/output 4 |
| Pin produk A9 | DQ5 — Data input/output 5 |
| Pin produk A10 | VSS — Ground |
| Pin produk A11 | DQ6 — Data input/output 6 |
| Pin produk A12 | DQ7 — Data input/output 7 |
| Pin produk A13 | VDD — Power supply |
| Pin produk A14 | DQ8 — Data input/output 8 |
| Pin produk A15 | DQ9 — Data input/output 9 |
| Pin produk A16 | VSS — Ground |
| Pin produk A17 | DQ10 — Data input/output 10 |
| Pin produk A18 | DQ11 — Data input/output 11 |
| Pin produk A19 | VDD — Power supply |
| Pin produk A20 | DQ12 — Data input/output 12 |
| Pin produk A21 | DQ13 — Data input/output 13 |
| Pin produk A22 | VSS — Ground |
| Pin produk A23 | DQ14 — Data input/output 14 |
| Pin produk A24 | DQ15 — Data input/output 15 |
| Pin produk B1 | VDDQ — Power supply for output |
| Pin produk B2 | VSSQ — Ground for output |
| Pin produk B3 | DQS0 — Data strobe 0 |
| Pin produk B4 | DQS0# — Data strobe 0 complement |
| Pin produk B5 | VDDQ — Power supply for output |
| Pin produk B6 | VSSQ — Ground for output |
| Pin produk B7 | DQS1 — Data strobe 1 |
| Pin produk B8 | DQS1# — Data strobe 1 complement |
| Pin produk B9 | VDDQ — Power supply for output |
| Pin produk B10 | VSSQ — Ground for output |
| Pin produk B11 | DQS2 — Data strobe 2 |
| Pin produk B12 | DQS2# — Data strobe 2 complement |
| Pin produk B13 | VDDQ — Power supply for output |
| Pin produk B14 | VSSQ — Ground for output |
| Pin produk B15 | DQS3 — Data strobe 3 |
| Pin produk B16 | DQS3# — Data strobe 3 complement |
| Pin produk B17 | VDDQ — Power supply for output |
| Pin produk B18 | VSSQ — Ground for output |
| Pin produk B19 | DQS4 — Data strobe 4 |
| Pin produk B20 | DQS4# — Data strobe 4 complement |
| Pin produk B21 | VDDQ — Power supply for output |
| Pin produk B22 | VSSQ — Ground for output |
| Pin produk B23 | DQS5 — Data strobe 5 |
| Pin produk B24 | DQS5# — Data strobe 5 complement |
| Pin produk C1 | A0 — Address input 0 |
| Pin produk C2 | A1 — Address input 1 |
| Pin produk C3 | A2 — Address input 2 |
| Pin produk C4 | A3 — Address input 3 |
| Pin produk C5 | A4 — Address input 4 |
| Pin produk C6 | A5 — Address input 5 |
| Pin produk C7 | A6 — Address input 6 |
| Pin produk C8 | A7 — Address input 7 |
| Pin produk C9 | A8 — Address input 8 |
| Pin produk C10 | A9 — Address input 9 |
| Pin produk C11 | A10/AP — Address input 10 / Auto-precharge |
| Pin produk C12 | A11 — Address input 11 |
| Pin produk C13 | A12/BC — Address input 12 / Burst chop |
| Pin produk C14 | A13 — Address input 13 |
| Pin produk C15 | A14 — Address input 14 |
| Pin produk C16 | A15 — Address input 15 |
| Pin produk C17 | BA0 — Bank address 0 |
| Pin produk C18 | BA1 — Bank address 1 |
| Pin produk C19 | BA2 — Bank address 2 |
| Pin produk C20 | BG0 — Bank group 0 |
| Pin produk C21 | BG1 — Bank group 1 |
| Pin produk C22 | VDD — Power supply |
| Pin produk C23 | VSS — Ground |
| Pin produk C24 | VDD — Power supply |
| Pin produk D1 | CK0 — Clock 0 |
| Pin produk D2 | CK0# — Clock 0 complement |
| Pin produk D3 | CKE0 — Clock enable 0 |
| Pin produk D4 | CS0# — Chip select 0 |
| Pin produk D5 | ODT0 — On-die termination 0 |
| Pin produk D6 | RAS# — Row address strobe |
| Pin produk D7 | CAS# — Column address strobe |
| Pin produk D8 | WE# — Write enable |
| Pin produk D9 | ACT# — Activate |
| Pin produk D10 | PAR — Parity |
| Pin produk D11 | ALERT# — Alert |
| Pin produk D12 | RESET# — Reset |
| Pin produk D13 | VDD — Power supply |
| Pin produk D14 | VSS — Ground |
| Pin produk D15 | VDD — Power supply |
| Pin produk D16 | VSS — Ground |
| Pin produk D17 | VDD — Power supply |
| Pin produk D18 | VSS — Ground |
| Pin produk D19 | VDD — Power supply |
| Pin produk D20 | VSS — Ground |
| Pin produk D21 | VDD — Power supply |
| Pin produk D22 | VSS — Ground |
| Pin produk D23 | VDD — Power supply |
| Pin produk D24 | VSS — Ground |
Aplikasi Umum
K4A8G165WB-BIRC cocok untuk 6 aplikasis: High-Performance Computing, Industrial Automation, Automotive Infotainment, Networking Equipment, Embedded Systems, Data Center Servers.
High-Performance Computing
The K4A8G165WB-BIRC0 provides 8Gb density and 2400 Mbps data rate, making it ideal for HPC systems requiring large memory capacity and high bandwidth. Its 1.2V operation reduces power consumption, and the 96-FBGA package enables compact PCB designs. In HPC, this DDR4 SDRAM is used in memory modules for servers and workstations, supporting parallel processing and data-intensive workloads. The high speed ensures fast data access, while the wide temperature range allows deployment in data centers with varying thermal conditions.
Direkomendasikan
Industrial Automation
With an operating temperature range of -40°C to +95°C, the K4A8G165WB-BIRC0 is well-suited for industrial automation systems that operate in harsh environments. Its 8Gb density supports complex control algorithms and data logging, while the 2400 Mbps speed ensures real-time processing. The 1.2V supply reduces heat generation, and the FBGA package withstands vibration and thermal cycling. This memory is used in PLCs, robotics, and industrial PCs, providing reliable performance in factory floors and outdoor installations.
Direkomendasikan
Automotive Infotainment
The K4A8G165WB-BIRC0 meets AEC-Q100 Grade 3 requirements with its -40°C to +95°C range, making it suitable for automotive infotainment systems. Its 8Gb density supports navigation maps, multimedia playback, and connectivity features, while the 2400 Mbps data rate ensures smooth graphics rendering. The 1.2V operation minimizes power draw from the vehicle's electrical system, and the compact FBGA package fits space-constrained head units. This memory is used in car radios, telematics, and advanced driver-assistance systems (ADAS) for reliable data storage and processing.
Direkomendasikan
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4A8G165WB-BIRC0 provides high-density memory for packet buffering and routing tables. Its 2400 Mbps data rate enables fast packet processing, and the 1.2V supply reduces power consumption in always-on devices. The 96-FBGA package allows for high-density PCB layouts, and the wide temperature range supports deployment in uncontrolled environments. This DDR4 SDRAM is essential for maintaining high throughput and low latency in enterprise and carrier-grade networking systems.
Direkomendasikan
Embedded Systems
The K4A8G165WB-BIRC0 is ideal for embedded systems requiring high memory capacity and reliability. Its 8Gb density supports complex applications like real-time data acquisition and image processing, while the 2400 Mbps speed ensures quick data access. The -40°C to +95°C temperature range makes it suitable for outdoor and industrial embedded systems. The 1.2V operation reduces power consumption, and the FBGA package is compatible with automated assembly. This memory is used in single-board computers, IoT gateways, and medical devices.
Direkomendasikan
Data Center Servers
The K4A8G165WB-BIRC0 is a key component in data center servers, providing high-density memory for virtualization, cloud computing, and big data analytics. Its 2400 Mbps data rate supports high-speed data transfer between CPU and memory, while the 8Gb density allows for large memory pools. The 1.2V supply reduces power and cooling costs, and the FBGA package enables high-density DIMM designs. This DDR4 SDRAM is used in rack servers and storage systems, ensuring reliable performance under continuous operation.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk K4A8G165WB-BIRC — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | K4A8G165WB-BIRG | K4A8G165WB-BIRH | K4A8G165WC-BCRC | MT40A1G8SA-075E | H5TC4G63AFR-PBA |
|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | B:A: 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | B:A: Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | B:A: 1 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | B:A: 128M x 8 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | B:A: 1.2 V | 1.2 V |
Diferensiator Kunci
- B-die process technology (vsK4A8G165WC-BCRC)
- Wide temperature range (vsMT40A1G8SA-075E:B:A)
- Higher density (vsH5TC4G63AFR-PBA)
Catatan Desain
For DDR4 routing at 2400 Mbps, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/control groups. Use ground planes beneath the memory to minimize noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF capacitors placed as close to the pins as possible. Use a low-ESR 1.2V supply and ensure the VREF voltage is generated from a low-noise source. Follow the power-up sequence specified in the datasheet to avoid latch-up.
The K4A8G165WB-BIRC0 operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to stay within limits. Use thermal vias under the package to improve heat dissipation.
Informasi Konformitas
RoHS compliant per Samsung datasheet. AEC-Q100 qualified based on -40°C to +95°C temperature range.
