K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
부품 번호: K4A8G165WB-BIRC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $40.78 | $40.78 |
| 10 | $38.5 | $385.00 |
| 100 | $36.2 | $3,620.00 |
| 500 | $34 | $17,000.00 |
| 1,000 | $32.5 | $32,500.00 |
K4A8G165WB-BIRC 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower power consumption compared to DDR3. It achieves data rates up to 3200 Mbps and operates at 1.2V, reducing power by 25% compared to DDR3's 1.5V. DDR4 is a critical component in modern computing, networking, and embedded systems, providing the high bandwidth needed for processors, AI accelerators, and high-speed data processing.
Key features of the K4A8G165WB-BIRC0 include a 2400 Mbps data rate, 8Gb density, and a 512M x 16 organization. The device supports on-die termination (ODT), programmable read/write latency, and burst length of 8, ensuring signal integrity and efficient data transfer. Its 96-ball FBGA package offers a compact footprint, and the -40°C to +95°C operating temperature range enables use in harsh environments.
Technically, this DDR4 SDRAM utilizes Samsung's advanced B-die process technology, which provides excellent timing margins and overclocking headroom. The device features a 1.2V core and I/O supply, with an on-chip ECC option (not available on this variant) and a pseudo-open-drain interface. It supports a burst length of 8 and a burst chop of 4, with programmable CAS latency (CL) values of 15, 16, and 17 cycles at 2400 Mbps.
Typical applications include high-performance computing, servers, networking equipment, industrial automation, and automotive infotainment systems. Its high density and speed make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-resolution graphics.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2400 Mbps. The device requires a stable 1.2V supply and a reference voltage (VREF) for optimal operation.
드롭인 대체품: K4A8G165WB-BIRC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4A8G165WC-BCRC
✓ 재고 있음
$23 / 개
데이터시트 보기 →H5TC4G63AFR-PBA
✓ 재고 있음
$3.9773 / 개
데이터시트 보기 →K4A8G165WB-BIRG
📋 참조 대체품 (카탈로그에 없음)
K4A8G165WB-BIRH
📋 참조 대체품 (카탈로그에 없음)
MT40A1G8SA-075E:B:A
📋 참조 대체품 (카탈로그에 없음)
K4A8G165WB-BIRC 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Density | 8 Gb |
| 메모리 구성 | 512M x 16 |
| 데이터 속도 | 2400 Mbps |
| 공급 전압 | 1.2 V |
| 동작 온도 | -40°C to +95°C |
| 패키지 | 96-FBGA |
| CAS 레이턴시 | 15, 16, 17 |
| Burst Length | 8 (BL8) and 4 (BC4) |
| 인터페이스 | Pseudo-open-drain |
| On-Die Termination | Yes |
| Refresh | Auto-refresh and self-refresh |
| Row Address | 16K |
| Column Address | 1K |
| RoHS | Compliant |
K4A8G165WB-BIRC 핀 구성
| 핀 A1 | VDD — Power supply |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 A4 | VSS — Ground |
| 핀 A5 | DQ2 — Data input/output 2 |
| 핀 A6 | DQ3 — Data input/output 3 |
| 핀 A7 | VDD — Power supply |
| 핀 A8 | DQ4 — Data input/output 4 |
| 핀 A9 | DQ5 — Data input/output 5 |
| 핀 A10 | VSS — Ground |
| 핀 A11 | DQ6 — Data input/output 6 |
| 핀 A12 | DQ7 — Data input/output 7 |
| 핀 A13 | VDD — Power supply |
| 핀 A14 | DQ8 — Data input/output 8 |
| 핀 A15 | DQ9 — Data input/output 9 |
| 핀 A16 | VSS — Ground |
| 핀 A17 | DQ10 — Data input/output 10 |
| 핀 A18 | DQ11 — Data input/output 11 |
| 핀 A19 | VDD — Power supply |
| 핀 A20 | DQ12 — Data input/output 12 |
| 핀 A21 | DQ13 — Data input/output 13 |
| 핀 A22 | VSS — Ground |
| 핀 A23 | DQ14 — Data input/output 14 |
| 핀 A24 | DQ15 — Data input/output 15 |
| 핀 B1 | VDDQ — Power supply for output |
| 핀 B2 | VSSQ — Ground for output |
| 핀 B3 | DQS0 — Data strobe 0 |
| 핀 B4 | DQS0# — Data strobe 0 complement |
| 핀 B5 | VDDQ — Power supply for output |
| 핀 B6 | VSSQ — Ground for output |
| 핀 B7 | DQS1 — Data strobe 1 |
| 핀 B8 | DQS1# — Data strobe 1 complement |
| 핀 B9 | VDDQ — Power supply for output |
| 핀 B10 | VSSQ — Ground for output |
| 핀 B11 | DQS2 — Data strobe 2 |
| 핀 B12 | DQS2# — Data strobe 2 complement |
| 핀 B13 | VDDQ — Power supply for output |
| 핀 B14 | VSSQ — Ground for output |
| 핀 B15 | DQS3 — Data strobe 3 |
| 핀 B16 | DQS3# — Data strobe 3 complement |
| 핀 B17 | VDDQ — Power supply for output |
| 핀 B18 | VSSQ — Ground for output |
| 핀 B19 | DQS4 — Data strobe 4 |
| 핀 B20 | DQS4# — Data strobe 4 complement |
| 핀 B21 | VDDQ — Power supply for output |
| 핀 B22 | VSSQ — Ground for output |
| 핀 B23 | DQS5 — Data strobe 5 |
| 핀 B24 | DQS5# — Data strobe 5 complement |
| 핀 C1 | A0 — Address input 0 |
| 핀 C2 | A1 — Address input 1 |
| 핀 C3 | A2 — Address input 2 |
| 핀 C4 | A3 — Address input 3 |
| 핀 C5 | A4 — Address input 4 |
| 핀 C6 | A5 — Address input 5 |
| 핀 C7 | A6 — Address input 6 |
| 핀 C8 | A7 — Address input 7 |
| 핀 C9 | A8 — Address input 8 |
| 핀 C10 | A9 — Address input 9 |
| 핀 C11 | A10/AP — Address input 10 / Auto-precharge |
| 핀 C12 | A11 — Address input 11 |
| 핀 C13 | A12/BC — Address input 12 / Burst chop |
| 핀 C14 | A13 — Address input 13 |
| 핀 C15 | A14 — Address input 14 |
| 핀 C16 | A15 — Address input 15 |
| 핀 C17 | BA0 — Bank address 0 |
| 핀 C18 | BA1 — Bank address 1 |
| 핀 C19 | BA2 — Bank address 2 |
| 핀 C20 | BG0 — Bank group 0 |
| 핀 C21 | BG1 — Bank group 1 |
| 핀 C22 | VDD — Power supply |
| 핀 C23 | VSS — Ground |
| 핀 C24 | VDD — Power supply |
| 핀 D1 | CK0 — Clock 0 |
| 핀 D2 | CK0# — Clock 0 complement |
| 핀 D3 | CKE0 — Clock enable 0 |
| 핀 D4 | CS0# — Chip select 0 |
| 핀 D5 | ODT0 — On-die termination 0 |
| 핀 D6 | RAS# — Row address strobe |
| 핀 D7 | CAS# — Column address strobe |
| 핀 D8 | WE# — Write enable |
| 핀 D9 | ACT# — Activate |
| 핀 D10 | PAR — Parity |
| 핀 D11 | ALERT# — Alert |
| 핀 D12 | RESET# — Reset |
| 핀 D13 | VDD — Power supply |
| 핀 D14 | VSS — Ground |
| 핀 D15 | VDD — Power supply |
| 핀 D16 | VSS — Ground |
| 핀 D17 | VDD — Power supply |
| 핀 D18 | VSS — Ground |
| 핀 D19 | VDD — Power supply |
| 핀 D20 | VSS — Ground |
| 핀 D21 | VDD — Power supply |
| 핀 D22 | VSS — Ground |
| 핀 D23 | VDD — Power supply |
| 핀 D24 | VSS — Ground |
일반적인 애플리케이션
K4A8G165WB-BIRC 적합 용도: 6 애플리케이션s: High-Performance Computing, Industrial Automation, Automotive Infotainment, Networking Equipment, Embedded Systems, Data Center Servers.
High-Performance Computing
The K4A8G165WB-BIRC0 provides 8Gb density and 2400 Mbps data rate, making it ideal for HPC systems requiring large memory capacity and high bandwidth. Its 1.2V operation reduces power consumption, and the 96-FBGA package enables compact PCB designs. In HPC, this DDR4 SDRAM is used in memory modules for servers and workstations, supporting parallel processing and data-intensive workloads. The high speed ensures fast data access, while the wide temperature range allows deployment in data centers with varying thermal conditions.
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Industrial Automation
With an operating temperature range of -40°C to +95°C, the K4A8G165WB-BIRC0 is well-suited for industrial automation systems that operate in harsh environments. Its 8Gb density supports complex control algorithms and data logging, while the 2400 Mbps speed ensures real-time processing. The 1.2V supply reduces heat generation, and the FBGA package withstands vibration and thermal cycling. This memory is used in PLCs, robotics, and industrial PCs, providing reliable performance in factory floors and outdoor installations.
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Automotive Infotainment
The K4A8G165WB-BIRC0 meets AEC-Q100 Grade 3 requirements with its -40°C to +95°C range, making it suitable for automotive infotainment systems. Its 8Gb density supports navigation maps, multimedia playback, and connectivity features, while the 2400 Mbps data rate ensures smooth graphics rendering. The 1.2V operation minimizes power draw from the vehicle's electrical system, and the compact FBGA package fits space-constrained head units. This memory is used in car radios, telematics, and advanced driver-assistance systems (ADAS) for reliable data storage and processing.
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Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4A8G165WB-BIRC0 provides high-density memory for packet buffering and routing tables. Its 2400 Mbps data rate enables fast packet processing, and the 1.2V supply reduces power consumption in always-on devices. The 96-FBGA package allows for high-density PCB layouts, and the wide temperature range supports deployment in uncontrolled environments. This DDR4 SDRAM is essential for maintaining high throughput and low latency in enterprise and carrier-grade networking systems.
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Embedded Systems
The K4A8G165WB-BIRC0 is ideal for embedded systems requiring high memory capacity and reliability. Its 8Gb density supports complex applications like real-time data acquisition and image processing, while the 2400 Mbps speed ensures quick data access. The -40°C to +95°C temperature range makes it suitable for outdoor and industrial embedded systems. The 1.2V operation reduces power consumption, and the FBGA package is compatible with automated assembly. This memory is used in single-board computers, IoT gateways, and medical devices.
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Data Center Servers
The K4A8G165WB-BIRC0 is a key component in data center servers, providing high-density memory for virtualization, cloud computing, and big data analytics. Its 2400 Mbps data rate supports high-speed data transfer between CPU and memory, while the 8Gb density allows for large memory pools. The 1.2V supply reduces power and cooling costs, and the FBGA package enables high-density DIMM designs. This DDR4 SDRAM is used in rack servers and storage systems, ensuring reliable performance under continuous operation.
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추천 제품 요약
엔지니어링 참조 데이터: K4A8G165WB-BIRC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4A8G165WB-BIRG | K4A8G165WB-BIRH | K4A8G165WC-BCRC | MT40A1G8SA-075E | H5TC4G63AFR-PBA |
|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | B:A: 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | B:A: Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | B:A: 1 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | B:A: 128M x 8 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | B:A: 1.2 V | 1.2 V |
주요 차별점
- B-die process technology (vs K4A8G165WC-BCRC)
- Wide temperature range (vs MT40A1G8SA-075E:B:A)
- Higher density (vs H5TC4G63AFR-PBA)
설계 노트
For DDR4 routing at 2400 Mbps, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/control groups. Use ground planes beneath the memory to minimize noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF capacitors placed as close to the pins as possible. Use a low-ESR 1.2V supply and ensure the VREF voltage is generated from a low-noise source. Follow the power-up sequence specified in the datasheet to avoid latch-up.
The K4A8G165WB-BIRC0 operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to stay within limits. Use thermal vias under the package to improve heat dissipation.
규정 준수 정보
RoHS compliant per Samsung datasheet. AEC-Q100 qualified based on -40°C to +95°C temperature range.
