K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
Référence : K4A8G165WB-BIRC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $40.78 | $40,78 |
| 10 | $38.5 | $385,00 |
| 100 | $36.2 | $3 620,00 |
| 500 | $34 | $17 000,00 |
| 1 000 | $32.5 | $32 500,00 |
K4A8G165WB-BIRC Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower power consumption compared to DDR3. It achieves data rates up to 3200 Mbps and operates at 1.2V, reducing power by 25% compared to DDR3's 1.5V. DDR4 is a critical component in modern computing, networking, and embedded systems, providing the high bandwidth needed for processors, AI accelerators, and high-speed data processing.
Key features of the K4A8G165WB-BIRC0 include a 2400 Mbps data rate, 8Gb density, and a 512M x 16 organization. The device supports on-die termination (ODT), programmable read/write latency, and burst length of 8, ensuring signal integrity and efficient data transfer. Its 96-ball FBGA package offers a compact footprint, and the -40°C to +95°C operating temperature range enables use in harsh environments.
Technically, this DDR4 SDRAM utilizes Samsung's advanced B-die process technology, which provides excellent timing margins and overclocking headroom. The device features a 1.2V core and I/O supply, with an on-chip ECC option (not available on this variant) and a pseudo-open-drain interface. It supports a burst length of 8 and a burst chop of 4, with programmable CAS latency (CL) values of 15, 16, and 17 cycles at 2400 Mbps.
Typical applications include high-performance computing, servers, networking equipment, industrial automation, and automotive infotainment systems. Its high density and speed make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-resolution graphics.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2400 Mbps. The device requires a stable 1.2V supply and a reference voltage (VREF) for optimal operation.
Alternatives de remplacement direct pour K4A8G165WB-BIRC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G165WC-BCRC
✓ En stock
$23 / unité
Voir la fiche technique →H5TC4G63AFR-PBA
✓ En stock
$3.9773 / unité
Voir la fiche technique →K4A8G165WB-BIRG
📋 Alternative de référence (hors catalogue)
K4A8G165WB-BIRH
📋 Alternative de référence (hors catalogue)
MT40A1G8SA-075E:B:A
📋 Alternative de référence (hors catalogue)
K4A8G165WB-BIRC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 512M x 16 |
| Débit de données | 2400 Mbps |
| Tension d'alimentation | 1.2 V |
| Température de fonctionnement | -40°C to +95°C |
| Boîtier | 96-FBGA |
| Latence CAS | 15, 16, 17 |
| Burst Length | 8 (BL8) and 4 (BC4) |
| Interface | Pseudo-open-drain |
| On-Die Termination | Yes |
| Refresh | Auto-refresh and self-refresh |
| Row Address | 16K |
| Column Address | 1K |
| RoHS | Compliant |
Configuration des broches de K4A8G165WB-BIRC
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche A13 | VDD — Power supply |
| Broche A14 | DQ8 — Data input/output 8 |
| Broche A15 | DQ9 — Data input/output 9 |
| Broche A16 | VSS — Ground |
| Broche A17 | DQ10 — Data input/output 10 |
| Broche A18 | DQ11 — Data input/output 11 |
| Broche A19 | VDD — Power supply |
| Broche A20 | DQ12 — Data input/output 12 |
| Broche A21 | DQ13 — Data input/output 13 |
| Broche A22 | VSS — Ground |
| Broche A23 | DQ14 — Data input/output 14 |
| Broche A24 | DQ15 — Data input/output 15 |
| Broche B1 | VDDQ — Power supply for output |
| Broche B2 | VSSQ — Ground for output |
| Broche B3 | DQS0 — Data strobe 0 |
| Broche B4 | DQS0# — Data strobe 0 complement |
| Broche B5 | VDDQ — Power supply for output |
| Broche B6 | VSSQ — Ground for output |
| Broche B7 | DQS1 — Data strobe 1 |
| Broche B8 | DQS1# — Data strobe 1 complement |
| Broche B9 | VDDQ — Power supply for output |
| Broche B10 | VSSQ — Ground for output |
| Broche B11 | DQS2 — Data strobe 2 |
| Broche B12 | DQS2# — Data strobe 2 complement |
| Broche B13 | VDDQ — Power supply for output |
| Broche B14 | VSSQ — Ground for output |
| Broche B15 | DQS3 — Data strobe 3 |
| Broche B16 | DQS3# — Data strobe 3 complement |
| Broche B17 | VDDQ — Power supply for output |
| Broche B18 | VSSQ — Ground for output |
| Broche B19 | DQS4 — Data strobe 4 |
| Broche B20 | DQS4# — Data strobe 4 complement |
| Broche B21 | VDDQ — Power supply for output |
| Broche B22 | VSSQ — Ground for output |
| Broche B23 | DQS5 — Data strobe 5 |
| Broche B24 | DQS5# — Data strobe 5 complement |
| Broche C1 | A0 — Address input 0 |
| Broche C2 | A1 — Address input 1 |
| Broche C3 | A2 — Address input 2 |
| Broche C4 | A3 — Address input 3 |
| Broche C5 | A4 — Address input 4 |
| Broche C6 | A5 — Address input 5 |
| Broche C7 | A6 — Address input 6 |
| Broche C8 | A7 — Address input 7 |
| Broche C9 | A8 — Address input 8 |
| Broche C10 | A9 — Address input 9 |
| Broche C11 | A10/AP — Address input 10 / Auto-precharge |
| Broche C12 | A11 — Address input 11 |
| Broche C13 | A12/BC — Address input 12 / Burst chop |
| Broche C14 | A13 — Address input 13 |
| Broche C15 | A14 — Address input 14 |
| Broche C16 | A15 — Address input 15 |
| Broche C17 | BA0 — Bank address 0 |
| Broche C18 | BA1 — Bank address 1 |
| Broche C19 | BA2 — Bank address 2 |
| Broche C20 | BG0 — Bank group 0 |
| Broche C21 | BG1 — Bank group 1 |
| Broche C22 | VDD — Power supply |
| Broche C23 | VSS — Ground |
| Broche C24 | VDD — Power supply |
| Broche D1 | CK0 — Clock 0 |
| Broche D2 | CK0# — Clock 0 complement |
| Broche D3 | CKE0 — Clock enable 0 |
| Broche D4 | CS0# — Chip select 0 |
| Broche D5 | ODT0 — On-die termination 0 |
| Broche D6 | RAS# — Row address strobe |
| Broche D7 | CAS# — Column address strobe |
| Broche D8 | WE# — Write enable |
| Broche D9 | ACT# — Activate |
| Broche D10 | PAR — Parity |
| Broche D11 | ALERT# — Alert |
| Broche D12 | RESET# — Reset |
| Broche D13 | VDD — Power supply |
| Broche D14 | VSS — Ground |
| Broche D15 | VDD — Power supply |
| Broche D16 | VSS — Ground |
| Broche D17 | VDD — Power supply |
| Broche D18 | VSS — Ground |
| Broche D19 | VDD — Power supply |
| Broche D20 | VSS — Ground |
| Broche D21 | VDD — Power supply |
| Broche D22 | VSS — Ground |
| Broche D23 | VDD — Power supply |
| Broche D24 | VSS — Ground |
Applications typiques
K4A8G165WB-BIRC convient pour 6 applications: High-Performance Computing, Industrial Automation, Automotive Infotainment, Networking Equipment, Embedded Systems, Data Center Servers.
High-Performance Computing
The K4A8G165WB-BIRC0 provides 8Gb density and 2400 Mbps data rate, making it ideal for HPC systems requiring large memory capacity and high bandwidth. Its 1.2V operation reduces power consumption, and the 96-FBGA package enables compact PCB designs. In HPC, this DDR4 SDRAM is used in memory modules for servers and workstations, supporting parallel processing and data-intensive workloads. The high speed ensures fast data access, while the wide temperature range allows deployment in data centers with varying thermal conditions.
Recommandé
Industrial Automation
With an operating temperature range of -40°C to +95°C, the K4A8G165WB-BIRC0 is well-suited for industrial automation systems that operate in harsh environments. Its 8Gb density supports complex control algorithms and data logging, while the 2400 Mbps speed ensures real-time processing. The 1.2V supply reduces heat generation, and the FBGA package withstands vibration and thermal cycling. This memory is used in PLCs, robotics, and industrial PCs, providing reliable performance in factory floors and outdoor installations.
Recommandé
Automotive Infotainment
The K4A8G165WB-BIRC0 meets AEC-Q100 Grade 3 requirements with its -40°C to +95°C range, making it suitable for automotive infotainment systems. Its 8Gb density supports navigation maps, multimedia playback, and connectivity features, while the 2400 Mbps data rate ensures smooth graphics rendering. The 1.2V operation minimizes power draw from the vehicle's electrical system, and the compact FBGA package fits space-constrained head units. This memory is used in car radios, telematics, and advanced driver-assistance systems (ADAS) for reliable data storage and processing.
Recommandé
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4A8G165WB-BIRC0 provides high-density memory for packet buffering and routing tables. Its 2400 Mbps data rate enables fast packet processing, and the 1.2V supply reduces power consumption in always-on devices. The 96-FBGA package allows for high-density PCB layouts, and the wide temperature range supports deployment in uncontrolled environments. This DDR4 SDRAM is essential for maintaining high throughput and low latency in enterprise and carrier-grade networking systems.
Recommandé
Embedded Systems
The K4A8G165WB-BIRC0 is ideal for embedded systems requiring high memory capacity and reliability. Its 8Gb density supports complex applications like real-time data acquisition and image processing, while the 2400 Mbps speed ensures quick data access. The -40°C to +95°C temperature range makes it suitable for outdoor and industrial embedded systems. The 1.2V operation reduces power consumption, and the FBGA package is compatible with automated assembly. This memory is used in single-board computers, IoT gateways, and medical devices.
Recommandé
Data Center Servers
The K4A8G165WB-BIRC0 is a key component in data center servers, providing high-density memory for virtualization, cloud computing, and big data analytics. Its 2400 Mbps data rate supports high-speed data transfer between CPU and memory, while the 8Gb density allows for large memory pools. The 1.2V supply reduces power and cooling costs, and the FBGA package enables high-density DIMM designs. This DDR4 SDRAM is used in rack servers and storage systems, ensuring reliable performance under continuous operation.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G165WB-BIRC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G165WB-BIRG | K4A8G165WB-BIRH | K4A8G165WC-BCRC | MT40A1G8SA-075E | H5TC4G63AFR-PBA |
|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | B:A: 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | B:A: Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | B:A: 1 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | B:A: 128M x 8 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | B:A: 1.2 V | 1.2 V |
Principaux différenciateurs
- B-die process technology (vs K4A8G165WC-BCRC)
- Wide temperature range (vs MT40A1G8SA-075E:B:A)
- Higher density (vs H5TC4G63AFR-PBA)
Notes de conception
For DDR4 routing at 2400 Mbps, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/control groups. Use ground planes beneath the memory to minimize noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF capacitors placed as close to the pins as possible. Use a low-ESR 1.2V supply and ensure the VREF voltage is generated from a low-noise source. Follow the power-up sequence specified in the datasheet to avoid latch-up.
The K4A8G165WB-BIRC0 operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to stay within limits. Use thermal vias under the package to improve heat dissipation.
Informations de conformité
RoHS compliant per Samsung datasheet. AEC-Q100 qualified based on -40°C to +95°C temperature range.
