K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
MPN: K4A8G165WB-BIRC ✓ Hoạt động| Số lượng | Giá đơn vị | Phụ |
|---|---|---|
| 1 | $40.78 | $40,78 |
| 10 | $38.5 | $385,00 |
| 100 | $36.2 | $3.620,00 |
| 500 | $34 | $17.000,00 |
| 1.000 | $32.5 | $32.500,00 |
K4A8G165WB-BIRC Tóm tắt
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower power consumption compared to DDR3. It achieves data rates up to 3200 Mbps and operates at 1.2V, reducing power by 25% compared to DDR3's 1.5V. DDR4 is a critical component in modern computing, networking, and embedded systems, providing the high bandwidth needed for processors, AI accelerators, and high-speed data processing.
Key features of the K4A8G165WB-BIRC0 include a 2400 Mbps data rate, 8Gb density, and a 512M x 16 organization. The device supports on-die termination (ODT), programmable read/write latency, and burst length of 8, ensuring signal integrity and efficient data transfer. Its 96-ball FBGA package offers a compact footprint, and the -40°C to +95°C operating temperature range enables use in harsh environments.
Technically, this DDR4 SDRAM utilizes Samsung's advanced B-die process technology, which provides excellent timing margins and overclocking headroom. The device features a 1.2V core and I/O supply, with an on-chip ECC option (not available on this variant) and a pseudo-open-drain interface. It supports a burst length of 8 and a burst chop of 4, with programmable CAS latency (CL) values of 15, 16, and 17 cycles at 2400 Mbps.
Typical applications include high-performance computing, servers, networking equipment, industrial automation, and automotive infotainment systems. Its high density and speed make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-resolution graphics.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2400 Mbps. The device requires a stable 1.2V supply and a reference voltage (VREF) for optimal operation.
Bộ thay thế dễ dàng lắp đặt cho K4A8G165WB-BIRC — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Công cụ so sánh nhanh — Chọn các bộ phận thay thế để so sánh song song:
K4A8G165WC-BCRC
Liên hệ để biết giá
Xem tài liệu →H5TC4G63AFR-PBA
✗ Hết hàng
$3.9773 / Đơn vị
Xem tài liệu →K4A8G165WB-BIRG
📋 Tham chiếu thay thế (không có trong danh mục)
K4A8G165WB-BIRH
📋 Tham chiếu thay thế (không có trong danh mục)
MT40A1G8SA-075E:B:A
📋 Tham chiếu thay thế (không có trong danh mục)
K4A8G165WB-BIRC Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR4 SDRAM |
| Density | 8 Gb |
| Tổ chức | 512M x 16 |
| Tốc độ dữ liệu | 2400 Mbps |
| Điện áp cung cấp | 1.2 V |
| Nhiệt độ hoạt động | -40°C to +95°C |
| Hộp | 96-FBGA |
| Latency CAS | 15, 16, 17 |
| Burst Length | 8 (BL8) and 4 (BC4) |
| Giao diện | Pseudo-open-drain |
| On-Die Termination | Yes |
| Refresh | Auto-refresh and self-refresh |
| Row Address | 16K |
| Column Address | 1K |
| RoHS | Compliant |
Cấu hình chân K4A8G165WB-BIRC
| Chân A1 | VDD — Power supply |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDD — Power supply |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân A13 | VDD — Power supply |
| Chân A14 | DQ8 — Data input/output 8 |
| Chân A15 | DQ9 — Data input/output 9 |
| Chân A16 | VSS — Ground |
| Chân A17 | DQ10 — Data input/output 10 |
| Chân A18 | DQ11 — Data input/output 11 |
| Chân A19 | VDD — Power supply |
| Chân A20 | DQ12 — Data input/output 12 |
| Chân A21 | DQ13 — Data input/output 13 |
| Chân A22 | VSS — Ground |
| Chân A23 | DQ14 — Data input/output 14 |
| Chân A24 | DQ15 — Data input/output 15 |
| Chân B1 | VDDQ — Power supply for output |
| Chân B2 | VSSQ — Ground for output |
| Chân B3 | DQS0 — Data strobe 0 |
| Chân B4 | DQS0# — Data strobe 0 complement |
| Chân B5 | VDDQ — Power supply for output |
| Chân B6 | VSSQ — Ground for output |
| Chân B7 | DQS1 — Data strobe 1 |
| Chân B8 | DQS1# — Data strobe 1 complement |
| Chân B9 | VDDQ — Power supply for output |
| Chân B10 | VSSQ — Ground for output |
| Chân B11 | DQS2 — Data strobe 2 |
| Chân B12 | DQS2# — Data strobe 2 complement |
| Chân B13 | VDDQ — Power supply for output |
| Chân B14 | VSSQ — Ground for output |
| Chân B15 | DQS3 — Data strobe 3 |
| Chân B16 | DQS3# — Data strobe 3 complement |
| Chân B17 | VDDQ — Power supply for output |
| Chân B18 | VSSQ — Ground for output |
| Chân B19 | DQS4 — Data strobe 4 |
| Chân B20 | DQS4# — Data strobe 4 complement |
| Chân B21 | VDDQ — Power supply for output |
| Chân B22 | VSSQ — Ground for output |
| Chân B23 | DQS5 — Data strobe 5 |
| Chân B24 | DQS5# — Data strobe 5 complement |
| Chân C1 | A0 — Address input 0 |
| Chân C2 | A1 — Address input 1 |
| Chân C3 | A2 — Address input 2 |
| Chân C4 | A3 — Address input 3 |
| Chân C5 | A4 — Address input 4 |
| Chân C6 | A5 — Address input 5 |
| Chân C7 | A6 — Address input 6 |
| Chân C8 | A7 — Address input 7 |
| Chân C9 | A8 — Address input 8 |
| Chân C10 | A9 — Address input 9 |
| Chân C11 | A10/AP — Address input 10 / Auto-precharge |
| Chân C12 | A11 — Address input 11 |
| Chân C13 | A12/BC — Address input 12 / Burst chop |
| Chân C14 | A13 — Address input 13 |
| Chân C15 | A14 — Address input 14 |
| Chân C16 | A15 — Address input 15 |
| Chân C17 | BA0 — Bank address 0 |
| Chân C18 | BA1 — Bank address 1 |
| Chân C19 | BA2 — Bank address 2 |
| Chân C20 | BG0 — Bank group 0 |
| Chân C21 | BG1 — Bank group 1 |
| Chân C22 | VDD — Power supply |
| Chân C23 | VSS — Ground |
| Chân C24 | VDD — Power supply |
| Chân D1 | CK0 — Clock 0 |
| Chân D2 | CK0# — Clock 0 complement |
| Chân D3 | CKE0 — Clock enable 0 |
| Chân D4 | CS0# — Chip select 0 |
| Chân D5 | ODT0 — On-die termination 0 |
| Chân D6 | RAS# — Row address strobe |
| Chân D7 | CAS# — Column address strobe |
| Chân D8 | WE# — Write enable |
| Chân D9 | ACT# — Activate |
| Chân D10 | PAR — Parity |
| Chân D11 | ALERT# — Alert |
| Chân D12 | RESET# — Reset |
| Chân D13 | VDD — Power supply |
| Chân D14 | VSS — Ground |
| Chân D15 | VDD — Power supply |
| Chân D16 | VSS — Ground |
| Chân D17 | VDD — Power supply |
| Chân D18 | VSS — Ground |
| Chân D19 | VDD — Power supply |
| Chân D20 | VSS — Ground |
| Chân D21 | VDD — Power supply |
| Chân D22 | VSS — Ground |
| Chân D23 | VDD — Power supply |
| Chân D24 | VSS — Ground |
Ứng dụng tiêu biểu
K4A8G165WB-BIRC phù hợp cho 6 Áp dụngs: High-Performance Computing, Industrial Automation, Automotive Infotainment, Networking Equipment, Embedded Systems, Data Center Servers.
High-Performance Computing
The K4A8G165WB-BIRC0 provides 8Gb density and 2400 Mbps data rate, making it ideal for HPC systems requiring large memory capacity and high bandwidth. Its 1.2V operation reduces power consumption, and the 96-FBGA package enables compact PCB designs. In HPC, this DDR4 SDRAM is used in memory modules for servers and workstations, supporting parallel processing and data-intensive workloads. The high speed ensures fast data access, while the wide temperature range allows deployment in data centers with varying thermal conditions.
Được đề xuất
Industrial Automation
With an operating temperature range of -40°C to +95°C, the K4A8G165WB-BIRC0 is well-suited for industrial automation systems that operate in harsh environments. Its 8Gb density supports complex control algorithms and data logging, while the 2400 Mbps speed ensures real-time processing. The 1.2V supply reduces heat generation, and the FBGA package withstands vibration and thermal cycling. This memory is used in PLCs, robotics, and industrial PCs, providing reliable performance in factory floors and outdoor installations.
Được đề xuất
Automotive Infotainment
The K4A8G165WB-BIRC0 meets AEC-Q100 Grade 3 requirements with its -40°C to +95°C range, making it suitable for automotive infotainment systems. Its 8Gb density supports navigation maps, multimedia playback, and connectivity features, while the 2400 Mbps data rate ensures smooth graphics rendering. The 1.2V operation minimizes power draw from the vehicle's electrical system, and the compact FBGA package fits space-constrained head units. This memory is used in car radios, telematics, and advanced driver-assistance systems (ADAS) for reliable data storage and processing.
Được đề xuất
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4A8G165WB-BIRC0 provides high-density memory for packet buffering and routing tables. Its 2400 Mbps data rate enables fast packet processing, and the 1.2V supply reduces power consumption in always-on devices. The 96-FBGA package allows for high-density PCB layouts, and the wide temperature range supports deployment in uncontrolled environments. This DDR4 SDRAM is essential for maintaining high throughput and low latency in enterprise and carrier-grade networking systems.
Được đề xuất
Embedded Systems
The K4A8G165WB-BIRC0 is ideal for embedded systems requiring high memory capacity and reliability. Its 8Gb density supports complex applications like real-time data acquisition and image processing, while the 2400 Mbps speed ensures quick data access. The -40°C to +95°C temperature range makes it suitable for outdoor and industrial embedded systems. The 1.2V operation reduces power consumption, and the FBGA package is compatible with automated assembly. This memory is used in single-board computers, IoT gateways, and medical devices.
Được đề xuất
Data Center Servers
The K4A8G165WB-BIRC0 is a key component in data center servers, providing high-density memory for virtualization, cloud computing, and big data analytics. Its 2400 Mbps data rate supports high-speed data transfer between CPU and memory, while the 8Gb density allows for large memory pools. The 1.2V supply reduces power and cooling costs, and the FBGA package enables high-density DIMM designs. This DDR4 SDRAM is used in rack servers and storage systems, ensuring reliable performance under continuous operation.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho K4A8G165WB-BIRC — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | K4A8G165WB-BIRG | K4A8G165WB-BIRH | K4A8G165WC-BCRC | MT40A1G8SA-075E | H5TC4G63AFR-PBA |
|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA | B:A: 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | B:A: Micron Technology | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | B:A: 1 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | B:A: 128M x 8 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | B:A: 1.2 V | 1.2 V |
Bảo phân biệt quan trọng
- B-die process technology (vsK4A8G165WC-BCRC)
- Wide temperature range (vsMT40A1G8SA-075E:B:A)
- Higher density (vsH5TC4G63AFR-PBA)
Ghi chú thiết kế
For DDR4 routing at 2400 Mbps, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/control groups. Use ground planes beneath the memory to minimize noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF capacitors placed as close to the pins as possible. Use a low-ESR 1.2V supply and ensure the VREF voltage is generated from a low-noise source. Follow the power-up sequence specified in the datasheet to avoid latch-up.
The K4A8G165WB-BIRC0 operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance of approximately 20°C/W; calculate junction temperature to stay within limits. Use thermal vias under the package to improve heat dissipation.
Thông tin tuân thủ
RoHS compliant per Samsung datasheet. AEC-Q100 qualified based on -40°C to +95°C temperature range.
