IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon
部品番号: IPD034N06N3GATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.98 | $9.80 |
| 100 | $0.78 | $78.00 |
| 500 | $0.66 | $330.00 |
| 1,000 | $0.58 | $580.00 |
| 2,500 | $0.51 | $1,275.00 |
IPD034N06N3GATMA1 概要
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled unipolar transistor optimized for high-current, high-speed switching. The MOSFET category sits within the broader discrete semiconductor taxonomy: power MOSFET -> MOSFET -> FET -> discrete semiconductor. Low on-resistance (RDS(on)) is the defining figure of merit because conduction loss equals I^2 x RDS(on). OptiMOS 3 is Infineon's third-generation 60V/100V/200V trench MOSFET family targeting SMPS, motor drive, and synchronous rectification.
Key features of the IPD034N06N3GATMA1 include an industry-leading 3.4 mOhm maximum RDS(on) at VGS=10V, a logic-level-compatible gate threshold range suitable for 4V gate drive, low gate charge QG for fast switching transitions, and an automotive-grade qualification per Infineon's product page. The DPAK (TO-252) surface-mount package provides a low thermal resistance path via its mounting tab and supports tab-side heatsinking on standard FR-4 PCB layouts. RoHS compliance is verified via the green suffix "G" in the orderable part number.
The OptiMOS 3 process uses a trench-gate architecture that maximizes cell density while minimizing conduction and switching losses. Compared with planar MOSFETs of the same die size, OptiMOS 3 achieves roughly 40-50% lower RDS(on) and substantially lower Qgd (gate-to-drain charge), enabling higher-frequency operation in switched-mode power supplies. The optimized body diode also improves hard-commutation ruggedness in bridge topologies.
Typical applications for the IPD034N06N3GATMA1 include high-current synchronous rectification in 12V/24V DC-DC converters, low-side switches in motor drive H-bridges, battery protection circuits in e-mobility and power tools, and OR-ing FETs in redundant telecom DC power architectures. Its 3.4 mOhm RDS(on) is a particularly strong fit for 10-30A continuous loads where conduction loss dominates system efficiency.
When designing with this part, prioritize a short, wide source-tab copper pour directly under the DPAK tab to minimize thermal resistance. Place the gate drive resistor (typically 10-100 ohm) close to the gate pin, and add a local gate-source pull-down of about 10 kohm to prevent unintended turn-on during supply transients. Verify that peak VDS stays below 48V in 24V systems to provide 20% derating margin.
ドロップイン代替品: IPD034N06N3GATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPD034N06N3GATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, MSL Level, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).
クイック比較ツール — 並列比較する代替部品を選択:
IPD031N06L3GATMA1
✅ ドロップイン✓ 在庫あり
$0.48 / 個
データシートを見る →IPB034N06L3G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IPD034N06N3G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NTD4906N
✅ ドロップイン📋 参考代替品（カタログ未掲載）
SUD50N06-25L
✅ ドロップイン📋 参考代替品（カタログ未掲載）
BSC094N06LS5ATMA1
✅ ドロップイン✓ 在庫あり
$0.38 / 個
データシートを見る →IPD034N06N3GATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| Technology | N-Channel Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc | 100 A |
| Maximum Power Dissipation (Ptot) | 167 W |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | 4 V at 93 uA |
| パッケージ | PG-TO252-3 (DPAK) |
| 実装タイプ | Surface Mount |
| Pin Configuration | 3-Pin (2 + Tab) |
| RoHS ステータス | Compliant (Pb-free green finish) |
| Automotive Qualified | Yes (per Infineon product page) |
IPD034N06N3GATMA1 ピン構成
| ピン 1 | Gate — Gate control input (drive 10V for full enhancement) |
| ピン 2 | Drain — Drain connection (also tied to metal tab) |
| ピン 3 | Source — Source connection |
| ピン Tab | Drain (Tab) — Metal mounting tab, internally connected to Drain pin 2; serves as thermal pad and primary drain current path |
安全動作領域 (SOA)
主な用途
IPD034N06N3GATMA1 の用途: 6 件s: 12V/24V Synchronous Rectification in DC-DC Converters, Low-Side Switch in Brushed DC Motor Drive (H-Bridge), Battery Protection / OR-ing FET in Telecom DC Plants, Automotive ECU Load Switching (AEC-Q Qualified), Hot-Swap / Inrush Current Limiter in 24V Industrial Systems, Power Tool / E-Bike Battery Pack Output Stage.
12V/24V Synchronous Rectification in DC-DC Converters
The IPD034N06N3GATMA1's 3.4 mOhm RDS(on) at VGS=10V and 60V VDS rating make it an ideal synchronous rectifier FET in 12V and 24V buck/forward converters. It replaces Schottky diodes in the low-side position, cutting rectification losses by 60-70% at 20A load and pushing peak efficiency above 95% in well-optimized designs. The 100A pulsed current rating provides ample margin for transient inrush during startup. Compared to a 60V Schottky diode with 0.5V VF, this MOSFET drops only I x RDS(on) (e.g. 68mV at 20A), translating into 6-8W of saved loss per FET at full load.
おすすめ
Low-Side Switch in Brushed DC Motor Drive (H-Bridge)
Used as a low-side switch in a 12V/24V brushed DC motor H-bridge, the IPD034N06N3GATMA1 handles continuous motor currents up to 30A and stall inrush up to 100A pulsed. The 3.4 mOhm RDS(on) keeps conduction loss to about 3W at 30A, while the DPAK tab mounts to a copper pour for heatsinking. For bidirectional motor control, two N-FETs on the low side paired with two P-FETs on the high side form a classic H-bridge. The OptiMOS 3 body diode also supports hard commutation during PWM switching without reverse-recovery issues common to planar MOSFETs.
おすすめ
Battery Protection / OR-ing FET in Telecom DC Plants
In -48V telecom DC plant OR-ing and lithium battery protection modules, the IPD034N06N3GATMA1's 60V VDS provides sufficient margin for 24V/48V bus operation while its 3.4 mOhm RDS(on) minimizes voltage drop in the power path. As an OR-ing FET, it prevents back-feeding between redundant -48V rectifiers; as a battery disconnect FET, it isolates the pack during fault conditions. The automotive-grade qualification also makes it acceptable for e-mobility battery management systems. Multiple parallel devices can scale current handling into the 200A+ range for high-power battery packs.
おすすめ
Automotive ECU Load Switching (AEC-Q Qualified)
The IPD034N06N3GATMA1's automotive qualification makes it suitable for ECU load switching in 12V automotive electrical systems, where it can drive solenoids, lamps, and motor loads up to 30A continuous. Its 60V VDS rating tolerates load-dump transients up to 35V typical on 12V buses. Used as a high-side or low-side switch with proper gate driving, it replaces mechanical relays with a solid-state solution offering 10x faster switching, no contact bounce, and longer operational life. AEC-Q100 grade parts are commonly sourced from this Infineon part family for body-electronics modules.
おすすめ
Hot-Swap / Inrush Current Limiter in 24V Industrial Systems
Hot-swap controllers paired with the IPD034N06N3GATMA1 enable safe board insertion into live 24V backplanes in industrial automation and telecommunications equipment. The MOSFET acts as the series pass element, controlled by a hot-swap IC that ramps gate voltage to limit inrush current to safe levels (typically 1-3A/C). At 3.4 mOhm RDS(on), steady-state voltage drop is only 34mV at 10A load, well within ATCA/AdvancedTCA budget. The 100A pulsed rating handles momentary fault currents while downstream protection triggers.
おすすめ
Power Tool / E-Bike Battery Pack Output Stage
In 18V/36V cordless power tool and e-bike battery packs, the IPD034N06N3GATMA1 serves as the main discharge FET between the Li-ion stack and the motor inverter. Its 3.4 mOhm RDS(on) minimizes voltage sag during high-current discharge (e.g. 30A peak in a 36V e-bike), preserving usable pack capacity. The automotive-grade reliability and 60V VDS rating tolerate the inductive kick from BLDC motor windings. Multiple FETs in parallel scale to 60-100A continuous for high-performance e-bike and power-tool applications.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPD034N06N3GATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPD031N06L3GATMA1 | IPB034N06L3G | IPD034N06N3G | NTD4906N | SUD50N06-25L | BSC094N06LS5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) tab variant - same | PG-TO252-3 (DPAK) - same | DPAK (TO-252) - same | DPAK (TO-252) - same | PG-TDSON-8 (DPAK footprint compatible) |
| VDS max | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (Tc) | 100 A | 100 A | 120 A | 100 A | 74 A | 50 A | 100 A (SuperSO8) |
| RDS(on) max @ VGS=10V | 3.4 mOhm | 3.1 mOhm | 3.4 mOhm | 3.4 mOhm | 6 mOhm | 25 mOhm | 0.94 mOhm |
| Technology | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS 3 trench | Trench N-FET | Trench N-FET | OptiMOS 5 trench |
| Power Dissipation (Tc) | 167 W | 167 W | 300 W (D2PAK) | 167 W | 125 W | 100 W | 139 W (SuperSO8) |
| Automotive Qualified | Yes | Yes | Yes | Yes | Yes | No | Yes |
| Approx. 1000-pc Price (USD) | 0.58 | 0.72 | 1.10 | 0.58 | 0.45 | 0.38 | 0.95 |
主な差別化要因
- Industry-leading RDS(on) for OptiMOS 3 generation （vs NTD4906N)
- Higher continuous drain current rating （vs SUD50N06-25L)
- OptiMOS 3 platform with proven automotive reliability （vs BSC094N06LS5ATMA1 (OptiMOS 5))
- Lower RDS(on) alternative exists within same Infineon family （vs IPD031N06L3GATMA1)
設計ノート
Estimated: at VIN=24V, VDS=12V (during switching transient or saturated operation), and continuous ID=20A, power dissipation is approximately 20V x 20A = 400W peak or 20A^2 x 3.4mOhm = 1.36W steady-state. With DPAK RthJA ~50 C/W on 1 oz copper FR-4 PCB, steady-state junction temperature rise is 1.36 x 50 = 68C above ambient - manageable without a heatsink. For continuous currents above 30A, attach an external heatsink or use multi-layer PCBs with 2+ oz copper and thermal vias under the DPAK tab to keep Tj below 125C.
Place the DPAK tab on a copper pour with at least 1 square inch of 2 oz copper to minimize thermal resistance. Add an array of thermal vias (12-16 vias, 0.3mm drill, 1mm pitch) under the tab to conduct heat to inner PCB copper layers. Source traces should also use wide, short copper pours to minimize parasitic inductance that can cause VDS overshoot during turn-off. Gate drive traces must be kept short (under 20mm) and routed away from drain-node switching transients.
Do not exceed VGS ratings: the IPD034N06N3GATMA1 has +/-20V absolute maximum VGS rating, but operation above +/-12V is not recommended. Ensure VDS stays below 60V during all operating conditions including load-dump transients on 12V automotive buses (which can reach 35V+). For synchronous-rectifier topologies, add a gate-source resistor of 10 kohm in parallel to keep the gate below Vth during supply transients and prevent parasitic turn-on from Miller current coupling.
In half-bridge and synchronous-rectifier layouts, keep the high-side and low-side FET source connections tight to minimize switching loop inductance. Excessive loop inductance causes VDS overshoot, ringing, and potential avalanche damage. Use a gate-drive resistor of 10-100 ohm (typically 22-47 ohm) to control switching speed and damp ringing. For high-current (>30A) applications, consider using multiple DPAK FETs in parallel rather than a single larger device - paralleling distributes thermal load and reduces conduction loss through redundancy.
コンプライアンス情報
RoHS compliance verified by "G" (green) suffix in orderable part number per Infineon product page. Automotive qualification per Infineon OptiMOS 3 family datasheet. Halogen-free status not explicitly stated in web data - left as unknown.
