MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
部品番号: MT40A512M16JY-083E ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $7.95 | $7.95 |
| 10 | $7.35 | $73.50 |
| 100 | $6.75 | $675.00 |
| 500 | $6.25 | $3,125.00 |
| 1,000 | $5.85 | $5,850.00 |
MT40A512M16JY-083E 概要
DDR4 SDRAM (Double Data Rate fourth-generation synchronous dynamic random-access memory) is the dominant main-memory technology for embedded processors, industrial controllers, and automotive computing platforms. Within the memory hierarchy it sits below cache (SRAM) and above storage (NAND flash), providing high-bandwidth, low-cost-per-bit working memory. The x16 organization suits processors with 16-bit or 32-bit memory controllers.
Key features include the -083E speed grade (tCK = 0.83 ns, 1.2 GHz clock, 2400 MT/s data rate), on-die internal adjustable VREFDQ generation that eliminates external reference resistors, and a 1.2V pseudo open-drain I/O structure that lowers I/O power versus DDR3. Automotive qualification targets the extended temperature range demanded by in-vehicle applications.
Architecturally, the device uses an 8-bank DDR4 core with bank-group burst access, 8n prefetch, and programmable CAS latency. Refresh is 8192-cycle per refresh window: 64ms at TC of -40C to 85C, 32ms above 85C to 95C, and 16ms above 95C, enabling reliable operation in hot automotive cabins.
Typical applications include automotive ADAS and infotainment main memory, industrial HMI and edge-AI platforms, networking line-card buffers, and test-and-measurement systems.
Design consideration: honor the separate 2.5V VPP rail in your power tree; omitting it or tying it to 1.2V prevents proper word-line biasing and can prevent boot. Follow Micron's DDR4 layout guidelines for fly-by routing with on-die termination.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: MT40A512M16JY-083E — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MT40A512M16JY-083E （同一形状・フットプリント） — 相違点: Package, Memory Size, Clock Frequency, Data Rate, Memory Type.
クイック比較ツール — 並列比較する代替部品を選択:
MT40A512M16LY-075:E
✅ ドロップイン✓ 在庫あり
$5.8 / 個
データシートを見る →MT40A512M16AD-062E
✅ ドロップイン✓ 在庫あり
$9.2 / 個
データシートを見る →MT40A512M16JY-083E-AUT
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NT5AD512M16C4-JRU
✅ ドロップイン✓ 在庫あり
$83 / 個
データシートを見る →K4A8G165WG-BCWE
✅ ドロップイン✓ 在庫あり
$29.5313 / 個
データシートを見る →K4A4G165WG-BCWE
✅ ドロップイン✓ 在庫あり
$16.9 / 個
データシートを見る →MT40A512M16JY-083E 仕様
| メモリタイプ | DDR4 SDRAM (Automotive) |
| Density | 8 Gbit |
| メモリ構成 | 512M x 16 |
| Clock Frequency | 1.2 GHz (tCK = 0.83 ns) |
| データレート | 2400 MT/s (speed grade -083E) |
| VDD Supply Voltage | 1.2 V +/- 60 mV |
| VDDQ Supply Voltage | 1.2 V +/- 60 mV |
| VPP Supply Voltage | 2.5 V, -125 mV, +250 mV |
| I/O Interface | 1.2 V pseudo open-drain |
| VREFDQ | On-die internal adjustable generation |
| Refresh Structure | 8192-cycle refresh |
| Refresh Window | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C |
| パッケージ | 96-FBGA (8 x 14 mm) |
| 実装タイプ | Surface Mount |
| ECCN | EAR99 |
| ハロゲンフリー | Compliant |
| Country of Origin | China |
MT40A512M16JY-083E 96-fbga (8 x 14 mm) ピン配置ガイド
MT40A512M16JY-083E (96-fbga (8 x 14 mm) パッケージ) のピン配置。 ピン番号、機能、接続図はメーカーのデータシートで定義されています。正確なフットプリントとはんだ付けのガイドラインについては、データシートを参照してください。
詳細なピン配置データはありません: MT40A512M16JY-083E.
詳細は データシート をご参照ください。
主な用途
MT40A512M16JY-083E の用途: 6 件s: Automotive ADAS Main Memory, Industrial HMI and Edge-AI Platforms, Networking Line-Card Buffer Memory, Automotive Infotainment Systems, Test and Measurement Instruments, Aerospace and Rugged Embedded Computing.
Automotive ADAS Main Memory
The MT40A512M16JY-083E fits ADAS domains because it is a purpose-built automotive DDR4 with extended-temperature refresh support - 64ms at -40C to 85C and a 16ms window above 95C per the Micron datasheet - covering under-hood and sealed-enclosure ambient extremes. Its 1.2 GHz clock and x16 organization deliver the sustained bandwidth camera- and radar-fusion SoCs demand at DDR4-2400 class rates. Place it on a short fly-by bus to the SoC memory controller with on-die termination and 40-ohm series termination at the controller; on-die VREFDQ removes the external reference divider, improving routing density. Power the VPP ball from a dedicated 2.5V rail sized for word-line pumping. Validate refresh-rate mode registers when cabin temperatures exceed 85C so bandwidth derating is budgeted in the perception stack.
おすすめ
Industrial HMI and Edge-AI Platforms
Industrial human-machine interfaces and edge-AI gateways need reliable working memory across wide factory temperature swings, and the MT40A512M16JY-083E covers this with its automotive refresh schedule (32ms window up to 95C). The 8Gb x16 organization gives 2 GB of capacity on a single 96-FBGA footprint, keeping board area small for fanless enclosures. On-die adjustable VREFDQ generation removes the external resistor divider, one less precision component in high-vibration environments, and the 1.2V pseudo open-drain I/O cuts I/O power in always-on panels. Layout the address/command bus fly-by style with daisy-chained 34-ohm termination and keep the DQS strobes length-matched within 25 mils. Budget the 2.5V VPP rail explicitly in the power tree; forgetting it is the most common first-boot failure.
おすすめ
Networking Line-Card Buffer Memory
Network switches and routers use deep packet buffers, and the MT40A512M16JY-083E supplies 8Gb of DDR4 at 2400 MT/s class rates in an x16 organization that pairs naturally with 16-bit packet-processing engines. Its 1.2 GHz clock and 8-bank, bank-group burst architecture sustain the random access patterns typical of queue management. In telecom racks the part sees moderate ambient temperatures, so the standard 64ms refresh window at up to 85C applies, preserving full bandwidth. Fly-by routing with on-die termination simplifies multi-rank backplane designs, and the EAR99 classification simplifies export logistics for international OEM programs. Verify controller timing tables against the -083 (tCK 0.83 ns) grade, or choose the faster MT40A512M16AD-062E on the identical footprint when headroom for 3200 MT/s class operation is desired.
おすすめ
Automotive Infotainment Systems
Digital cockpits and infotainment head units run Android-class operating systems that need gigabytes of DRAM for graphics compositing and application workloads. The MT40A512M16JY-083E provides 8Gb (1 GB) per package in 96-FBGA, and two packages yield 2 GB with minimal PCB area. Its automotive qualification and hot-temperature refresh modes (16ms window above 95C) address dashboard environments where solar load pushes enclosures past 85C. The 1.2 GHz, x16 interface matches mainstream automotive SoC memory controllers without needing x32 aggregation. Because boot-time and graphics bandwidth are competing demands, enable bank-group interleaving in the controller and validate ZQ calibration across the full temperature range. Keep the VPP 2.5V rail sequenced before or with VDD per the Micron power-up specification to avoid latch-up during cold crank.
おすすめ
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators buffer large acquisition records into DRAM, and the MT40A512M16JY-083E's 8Gb density with sustained 2400 MT/s class transfers supports deep capture memory without widening the board. The x16 organization doubles per-bank bandwidth versus x8 for streaming writes, and pseudo open-drain I/O keeps I/O power predictable in sealed benchtop enclosures. In lab environments the 64ms / 8192-cycle refresh at -40C to 85C applies, so full bandwidth is available with no temperature derating. Design the capture FPGA-to-DRAM interface with fly-by address routing, length-matched DQS/DQ groups, and 0.1uF plus 10uF decoupling per power ball group; place VTT termination regulation (e.g., an LDO designed for DDR VTT) close to the bus stub. Select the faster -062E sibling on the same footprint when sampling rates exceed the -083 timing budget.
おすすめ
Aerospace and Rugged Embedded Computing
Rugged embedded and avionics-adjacent compute modules value the MT40A512M16JY-083E's wide-temperature refresh coverage (16ms window above 95C) and stable automotive-grade process qualification, which translate into margin in vibration- and thermally-stressed enclosures. One 96-FBGA package supplies 1 GB, letting conduction-cooled 3U boards reach 4 GB with four packages under a single heat frame. The on-die VREFDQ generator removes precision external references that drift under radiation and aging stress, and the EAR99 classification keeps export paperwork simple. Follow conduction-cooled layout practice: keep the DRAM within 60 mm of the processor, mirror the fly-by bus symmetrically, and thermally couple the FBGA ground balls to the heat frame through via arrays. For programs requiring space-level screening, move to qualified counterparts rather than assuming automotive grade suffices.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MT40A512M16JY-083E — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT40A512M16LY-075:E | MT40A512M16AD-062E | K4A8G165WG-BCWE | NT5AD512M16C4-JRU |
|---|---|---|---|---|---|
| Package | 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) - same | 96-FBGA (8x14 mm) - same | FBGA-96 - compatible | 96-FBGA - compatible |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | Nanya Technology |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| VDD Voltage | 1.2 V +/- 60 mV | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
主な差別化要因
- Purpose-built automotive grade with hot-temperature refresh （vs NT5AD512M16C4-JRU)
- Faster speed-grade siblings on the identical footprint （vs MT40A512M16AD-062E)
- Second-source ecosystem maturity （vs K4A8G165WG-BCWE)
- Honest density trade-off on Samsung 4Gb alternative （vs K4A4G165WG-BCWE)
設計ノート
The MT40A512M16JY-083E requires three supply rails: VDD, VDDQ at 1.2V +/-60mV and a separate VPP at 2.5V (-125mV/+250mV) that biases the word-line charge pump. Do not tie VPP to 1.2V; the device will fail power-up or margin word-line levels. Sequence VPP with or before VDD per the Micron DDR4 power-up specification, and decouple each ball group with a 0.1uF ceramic plus bulk 10uF per rank. Estimated: at 2400 MT/s a fully active rank draws on the order of several hundred milliamps, so size the 1.2V rail with headroom for simultaneous read/write bursts.
Route the DDR4 bus fly-by style: address/command/clock daisy-chain from the controller through each DRAM with on-die termination absorbing the stub reflection. Length-match DQS-to-DQ groups within +/-25 mils and keep the clock-to-address skew per Micron's DDR4 point-to-point layout guide. On-die adjustable VREFDQ eliminates the external reference divider, but still keep data-group return paths continuous over an unbroken ground plane. For dual-package designs, place both FBGA parts symmetrically about the controller to balance fly-by tap delays.
Honor the extended-temperature refresh schedule: 64ms window from -40C to 85C, 32ms up to 95C, and 16ms above 95C, per the Micron datasheet. Above 85C the controller must double (and above 95C quadruple) refresh frequency, consuming effective bandwidth. In sealed automotive or industrial enclosures, estimate junction temperature from ambient plus package theta-JA with your board copper - if the enclosure can exceed 85C, budget the bandwidth derating in your software architecture rather than discovering it in summer validation.
Two frequent mistakes: (1) mixing speed grades in a dual-source BOM - the -083 (tCK 0.83 ns) and -075 (tCK 0.75 ns) parts require different controller timing registers, so lock the timing table to the slowest approved grade; (2) assuming any x16 DDR4 is drop-in - verify ballout, die revision code (the :A and :B suffixes denote die revisions) and VREFDQ behavior against your memory-controller configuration before second-sourcing.
コンプライアンス情報
Halogen-free compliant per third-party listing data (datasheets.globalspec.com). ECCN EAR99; country of origin China. RoHS/REACH/lead-free status not stated in provided data - verify on Micron's product page.
