MT40A512M8SA-062E - 4Gb DDR4 SDRAM x8, 3200 | Micron
部品番号: MT40A512M8SA-062E ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $6.85 | $6.85 |
| 10 | $6.35 | $63.50 |
| 100 | $5.95 | $595.00 |
| 500 | $5.65 | $2,825.00 |
| 1,000 | $5.35 | $5,350.00 |
MT40A512M8SA-062E 概要
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, sitting within the hierarchy of DRAM components -> SDRAM -> DDR4 SDRAM -> volatile memory ICs. Compared to DDR3, DDR4 lowers the core supply voltage to 1.2V, doubles bank groups, and raises data rates up to 3200 MT/s, making it the dominant main-memory technology for computing platforms from embedded controllers to servers.
Key features of this device include VDD = VDDQ = 1.2V +/-60mV with a separate VPP supply of 2.5V (-125mV/+250mV) for the word-line driver, on-die internal adjustable VREFDQ generation that eliminates an external reference rail, a pseudo open-drain 1.2V I/O interface, and TC maximum operation to 95 degrees C. The x8 organization supports the standard DDR4 feature set including bank groups and on-die termination.
Technically, the device uses an 8n-prefetch architecture with two or four bank groups; data is transferred on both clock edges at up to 1600 MHz clock rate for 3200 MT/s effective bandwidth on the 8-bit data bus. The :F suffix denotes the lead-free/RoHS package flow with a commercial operating range; IT, AIT and AUT grade variants extend the range for industrial and automotive platforms.
Typical applications include desktop and notebook main memory, embedded computing modules, industrial controllers, networking equipment, and replacement sourcing for DDR4-based designs.
Design consideration: DDR4 routing requires length-matched, on-die-terminated data lines; PCB trace matching to the die, correct VPP decoupling, and address/command termination per the Micron datasheet layout guidance are essential for reliable operation at 3200 MT/s.
This page synthesizes distributor pricing, drop-in alternatives across speed and temperature grades, and practical design notes not consolidated in the manufacturer datasheet.
ドロップイン代替品: MT40A512M8SA-062E — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MT40A512M8SA-062E （同一形状・フットプリント） — 相違点: Interface, Package, Organization, Clock Frequency, Data Rate.
クイック比較ツール — 並列比較する代替部品を選択:
MT40A512M8SA-062E IT:F
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A512M8SA-062E AAT:F
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A512M8SA-062E AIT:F
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A512M8SA-062E AUT:F
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A512M8SA-062E:G
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A512M8SA-075:F
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K4A4G085WE-BCRC
✅ ドロップイン✓ 在庫あり
$1.36 / 個
データシートを見る →NT5AD512M16C4-JRU
✅ ドロップイン✓ 在庫あり
$83 / 個
データシートを見る →MT40A512M8SA-062E 仕様
| メモリタイプ | DDR4 SDRAM |
| メモリサイズ | 4 Gbit |
| メモリ構成 | 512M x 8 |
| Clock Frequency | 1.6 GHz |
| データレート | 3200 MT/s (DDR4-3200 class) |
| Access Time | 13.75 ns |
| Write Cycle Time | 15 ns |
| VDD / VDDQ | 1.2 V +/-60 mV |
| VPP Supply | 2.5 V (-125 mV / +250 mV) |
| インターフェース | Parallel, 1.2 V pseudo open-drain I/O |
| VREFDQ | On-die internal adjustable generation |
| パッケージ | 78-FBGA (7.5 x 11 mm), Z10B |
| 実装タイプ | Surface Mount |
| Operating Temperature (TC max) | up to 95 degrees C |
| Package Flow | :F (lead-free / RoHS) |
| 実装スタイル | SMD/SMT |
MT40A512M8SA-062E :f (lead-free / rohs) ピン配置ガイド
MT40A512M8SA-062E (:f (lead-free / rohs) パッケージ) のピン配置。 ピン番号、機能、接続図はメーカーのデータシートで定義されています。正確なフットプリントとはんだ付けのガイドラインについては、データシートを参照してください。
詳細なピン配置データはありません: MT40A512M8SA-062E.
詳細は データシート をご参照ください。
主な用途
MT40A512M8SA-062E の用途: 6 件s: Desktop and Notebook Main Memory, Industrial Controllers and Embedded Computing, Automotive Infotainment and Telematics, Networking and Communication Equipment, Replacement Sourcing and BOM Continuity, FPGA and ASSP Data Buffering.
Desktop and Notebook Main Memory
The MT40A512M8SA-062E serves as main system memory in desktop PCs, notebooks, and SODIMM/U DIMM modules, where its 4Gb x8 organization and 3200 MT/s-class data rate align with mainstream DDR4 memory controllers. Populated in multiples on a 64-bit memory bus, eight x8 devices form a standard non-ECC DIMM rank delivering 4 GB per rank. The 1.2V VDD/VDDQ operation reduces memory subsystem power versus DDR3, and the on-die adjustable VREFDQ removes an external reference rail from the module design, simplifying routing on dense 78-ball layouts. At 1.6 GHz clock operation, signal integrity demands length-matched fly-by command/address routing and on-die termination, both natively supported by this DDR4 device.
おすすめ
Industrial Controllers and Embedded Computing
Industrial controllers, PLCs, and embedded computing modules use the MT40A512M8SA-062E as volatile working memory where its TC maximum of 95 degrees C covers most enclosure environments. The global datasheet overview specifically targets industrial controllers and computing modules for this DDR4 family. For harsh or thermally extreme deployments, the identical-die IT:F industrial-temperature or AIT:F automotive-industrial variants drop onto the same PCB footprint without redesign. The 4 Gbit capacity suits boot-to-RAM execution of embedded Linux and real-time control stacks, while the 512M x8 organization with pseudo open-drain 1.2V I/O keeps I/O power low in fanless, conduction-cooled systems.
おすすめ
Automotive Infotainment and Telematics
Automotive infotainment, digital cockpit, and telematics platforms require DDR4 DRAM qualified for elevated temperature and automotive flows. The Micron AUT:F, AAT:F, and AIT:F grade variants of this same 4Gb x8 die provide AEC-flow traceability while preserving the identical 78-FBGA footprint, allowing one PCB design to span consumer and automotive builds. In infotainment SoC designs the -062E speed bin supplies the bandwidth needed for graphics frame buffers and navigation map buffering, with the 2.5V VPP rail and on-die VREFDQ simplifying the power tree in space-constrained modules. DigiKey lists the AIT:F variant in stock for same-day shipment as of 2026-09-02.
おすすめ
Networking and Communication Equipment
Routers, switches, and network-attached processing cards use the MT40A512M8SA-062E for packet buffering, routing tables, and control-plane memory. The 3200 MT/s-class interface provides the sustained bandwidth required by gigabit-class network processors, while the x8 organization allows designers to scale bus width in 8-bit increments to match controller data paths. Network equipment often operates in closed racks approaching the 95 degrees C TC limit, making airflow or thermal-spreader design important; the AIT:F variant extends environmental margin where required. The 78-FBGA package supports dense memory clusters around SoCs on 6-8 layer PCBs typical of network line cards.
おすすめ
Replacement Sourcing and BOM Continuity
The MT40A512M8SA-062E is widely used as a replacement-sourcing component: the Micron product overview explicitly lists replacement sourcing among its target uses, and Octopart tracks 19 distributors stocking the :F variant. When an original DDR4 DRAM becomes allocation-constrained, this 4Gb x8 part substitutes for JEDEC-compatible 78-FBGA DDR4 devices, with the IT:F/AAT:F/AIT:F temperature variants and Samsung K4A4G085WE-BCRC providing same-footprint alternates. Buyers should as of 2026-09-02 expect pricing near $5.95-$6.85 in unit quantities. Always verify the memory controller's supported vendor SPD entries before qualifying a substitution in field-repair inventories.
おすすめ
FPGA and ASSP Data Buffering
FPGA-based designs - data acquisition, image processing, and test instrumentation - attach DDR4 SDRAM such as the MT40A512M8SA-062E via hardened memory controllers for high-throughput buffering. The -062E speed bin supports 3200 MT/s-class interfaces implemented by FPGA memory-controller IP, while the x8 organization with differential DQS strobes simplifies read-capture calibration. The on-die adjustable VREFDQ generation removes one external precision rail from the FPGA board power tree, and the 1.2V pseudo open-drain I/O reduces simultaneous-switching noise on mixed-signal acquisition boards. A single 4Gb device supplies 512 MB of capture-buffer depth, adequate for high-speed ADC streaming applications.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MT40A512M8SA-062E — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT40A512M8SA-062E IT:F | MT40A512M8SA-062E AAT:F | MT40A512M8SA-062E AUT:F | MT40A512M8SA-062E:G | MT40A512M8SA-075:F | K4A4G085WE-BCRC |
|---|---|---|---|---|---|---|---|
| Package | 78-FBGA (7.5x11) | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same | 78-FBGA - same | 78-FBGA (7.5x11) - same | 78-FBGA - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Speed Grade | -062E (3200 class, 1.6 GHz) | -062E (3200 class) | -062E (3200 class) | -062E (3200 class) | -062E (:G flow) | -075 (2666 class) | 3200 class |
| Supply Voltage (VDD/VDDQ) | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V |
| RoHS / Lead-Free Flow | :F (lead-free) | :F - lead-free | :F - lead-free | :F - lead-free | :G flow | :F - lead-free | RoHS compliant |
主な差別化要因
- Full-speed commercial-grade availability at 3200 MT/s class （vs MT40A512M8SA-075:F)
- Identical-die automotive and industrial variants enable one PCB across markets （vs MT40A512M8SA-062E AUT:F / AIT:F)
- Multi-source flexibility （vs K4A4G085WE-BCRC)
設計ノート
DDR4 x8 routing at -062E speed class requires length-matched data groups: match DQ[7:0], DQS/DQS# and DM within +/-25 mil on standard FR4, and keep command/address in fly-by topology with balanced stubs to each DRAM. The 78-FBGA (7.5 x 11 mm) ballout places DQ balls for short escape routing; use 40-ohm controlled-impedance traces for the data group and reference a solid ground plane. Follow the layout guidance in Micron's 4Gb DDR4 SDRAM datasheet and Micron's DDR4 point-to-point design guides before releasing the stackup.
Provide three rails: VDD and VDDQ at 1.2 V +/-60 mV and VPP at 2.5 V (-125 mV/+250 mV). VPP supplies the word-line charge pump and must be present whenever VDD is applied. Decouple with a network of 0.1 uF and 1 uF ceramics per device plus bulk capacitance per rank; the pseudo open-drain I/O draws current only during low levels, so VDDQ transient sizing can be lighter than DDR3. The on-die adjustable VREFDQ eliminates the external reference rail, reducing regulator count and rail-to-rail tracking requirements.
The device is rated TC maximum to 95 degrees C. Estimated: at moderate DDR4 activity (~0.5 W per device), the FBGA theta-JA of roughly 30-40 C/W on a multi-layer board implies a 15-20 C self-heating rise, so ambient must stay below ~75 C for commercial :F parts. For environments above this, select the IT:F, AAT:F, AIT:F or AUT:F variants, which share the identical footprint and require no PCB change.
Do not mix speed bins blindly: the -075:F variant is DDR4-2666 class and will not close timing at 3200 MT/s controller settings even though it is footprint-identical. Verify the memory controller's vendor compatibility/SPD table before substituting the cross-brand Samsung K4A4G085WE-BCRC, as read-training algorithms can be vendor-sensitive. Confirm the exact :F vs :G package-flow suffix on purchase orders, since the two flows carry different documentation.
コンプライアンス情報
:F package flow denotes Micron lead-free/RoHS-compliant assembly. REACH, halogen-free and conflict-minerals statements not found in provided data. AEC-Q100 applies to the AAT:F/AIT:F/AUT:F automotive variants, not the base :F part.
