MOSFET
제품 (1294)
MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP
The NXP MRF6P9220HR3 is a 47 W average, 28 V lateral N-channel RF power MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. Housed in the NI-860C3 ceramic package, it delivers 20 dB typical power gain at 880 MHz and is engineered for large-signal, common-source amplifier operation in 28 V base-station equipment, with primary targeting of single N-CDMA downstream links. A radio-frequency power MOSFET is a specialized transistor built on a lateral DMOS or LDMOS structure, optimized to deliver high continuous-wave and modulated RF power with high gain and efficiency into a 50-ohm load. It sits within the broader taxonomy of RF power transistors, which in turn are a subset of discrete power semiconductors; LDMOS is the dominant technology for cellular base-station PA outputs above 1 GHz because it offers an excellent compromise between RF gain, efficiency, thermal conductivity, and ruggedness versus Si BJT or GaAs alternatives. Key specifications include a 28 VDC drain supply, 47 W typical output power, 20 dB gain, [DATA_NEEDED: efficiency value] and a 1.6 A typical quiescent bias current. The lateral N-channel enhancement-mode structure provides high breakdown voltage and is internally matched for common-source operation, simplifying board-level integration. The NI-860C3 package features a low-inductance ceramic body with a flange-mount flange for direct attachment to a heatsink or copper spreader, critical for dissipating the high thermal load at 47 W RF output. Architecturally, the device uses a laterally diffused metal-oxide-semiconductor process with optimized source-via grounding and a low-loss lead frame to minimize parasitic inductance at 880 MHz. The high gain-bandwidth product allows a single stage to deliver 47 W with reasonable gain flatness across the 700-1000 MHz cellular bands, reducing the number of driver stages required in a multi-amplifier lineup. Primary applications include single-carrier W-CDMA and N-CDMA base-station power amplifiers operating in the 869-894 MHz cellular downlink band, industrial RF heating at sub-GHz frequencies, and broadband laboratory RF amplifiers. The part is rated for continuous commercial service with appropriate thermal management. Designers should bias the gate near 2.8-3.0 V to set quiescent current in class-AB operation and must provide adequate heat-sinking through the metal flange; thermals are the dominant reliability limiter for this part. This page synthesizes the official NXP datasheet, current distributor pricing and stock, drop-in replacement options, and practical design notes (bias networks, thermal management, sequencing) not consolidated on the distributor catalog page.
MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF6P9220HR5 is an N-channel RF power MOSFET designed for high-performance RF amplifier applications at 880 MHz. It delivers 47 W of continuous output power from a 28 V supply, with 20 dB typical power gain and 1.6 A DC current handling in a 5-pin NI-860C3 ceramic package. An RF power MOSFET is a discrete transistor optimized for radio-frequency amplification rather than switching or low-frequency linear operation. These devices sit within the broader hierarchy of power transistors -> RF transistors -> RF power MOSFETs -> discrete semiconductors. The MRF6P9220HR5 belongs to NXP's MRF6P series of laterally diffused MOSFETs (LDMOS), the dominant technology for cellular base-station and broadcast RF power amplifiers since the early 2000s. Key electrical strengths include 47 W CW output power at 880 MHz, 20 dB power gain which reduces driver-stage requirements, high drain efficiency for reduced heat-sinking mass, and ruggedness against load mismatch with VSWR up to 10:1 (per manufacturer). The 28 V supply rail keeps drain current moderate while delivering high RF energy, and the broadband matching networks commonly used with this family simplify multi-band designs. Internally, the MRF6P9220HR5 employs a silicon LDMOS architecture with a planar gate and ceramic NI-860C3 flange package featuring a through-hole lead format. The ceramic body offers a low thermal resistance path from junction to heatsink, with bolt-down mounting enabling direct attachment to external copper or aluminum heat spreaders. Typical applications include cellular base-station final-stage amplifiers at 800-900 MHz, broadcast FM transmitter drivers, industrial RF heating generators, and aerospace telemetry transmitters. It is also used as a driver or pre-driver for higher-power MRF6P9220 / MRF6P9220H single-ended or push-pull amplifier chains. Design tip: This device requires a tuned matching network on input and output, a low-inductance ground return, and a properly biased gate supply (typically a few volts positive on Vgs). Provide adequate heatsinking - the ceramic package dissipates significant heat at 47 W CW. Designers should also implement over-temperature protection via a thermistor and avoid operating outside the 28 V specified rail to prevent parametric shift. This page synthesizes distributor pricing, drop-in cross-references, and practical design notes that go beyond the manufacturer datasheet headlines.
MRF6S18100NBR1 - 100W RF LDMOS Power Transistor | NXP
The NXP MRF6S18100NBR1 is an RF power Field Effect Transistor based on N-channel enhancement-mode lateral MOSFET (LDMOS) technology, rated for 100 W output power at 1.99 GHz from a 28 V supply. It is housed in a TO-272 WB-4 ceramic package (over-molded plastic variant) and is characterized for GSM and GSM EDGE base-station applications between 1805 and 1990 MHz, also supporting TDMA, CDMA, and multicarrier amplifier topologies. A radio-frequency power transistor (RF FET / RF MOSFET) is a specialized discrete semiconductor that converts DC supply energy into a high-frequency, high-power RF signal for the final stage of a transmitter. The LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family is the dominant technology for sub-3 GHz macro-cell base-station power amplifiers because it combines high breakdown voltage, high gain, good efficiency, and reasonable cost. LDMOS sits within the broader taxonomy: LDMOS -> RF power MOSFET -> power MOSFET -> MOSFET -> discrete semiconductor. Key features of the MRF6S18100NBR1 include 14.5 dB typical power gain at 1990 MHz, 100 W pulsed output power under GSM/EDGE drive, a 68 V drain-source voltage rating (V(BR)DSS), and an integrated ceramic over-molded package with a metalized flange for direct PCB or heatsink mounting. The part is also characterized for ruggedness into a 10:1 VSWR load at the specified supply voltage, a key requirement for cellular base-station final-stage amplifiers that may see antenna mismatch events. Architecturally, the device uses a single-ended N-channel lateral MOSFET die optimized for class-AB or class-C biasing in common-source configuration. Internal matching networks are not integrated; the matching, bias sequencing, and harmonic filtering must be designed on the external PCB following the manufacturer reference design from the MRF6S18100N datasheet family. Typical applications include GSM/GSM EDGE 1800 MHz base-station final-stage PAs, multicarrier TDMA/CDMA driver or output stages, and 1.9 GHz DECT/W-CDMA amplifier blocks. Designers favor this part when an external heatsink or cold plate is available, since 100 W pulsed RF at 28 V dissipates significant DC power. When designing with this part, observe the 68 V maximum drain voltage, keep lead length to the gate and drain short to minimize parasitic inductance, and follow the reference-design PCB stackup for thermal management. Always use sequence bias (drain-on before gate-on) during turn-on to avoid parametric oscillation. This page synthesizes distributor availability, drop-in same-package alternatives, and PCB-level design notes not found in the manufacturer datasheet alone.
MRF6S18140HR5 - 29W RF Power LDMOS Transistor | NXP Semiconductors
The NXP Semiconductors (formerly Freescale) MRF6S18140HR5 is a high-power RF LDMOS transistor optimized for 1.8 GHz wireless infrastructure applications, delivering 29 W of output power with 16 dB power gain when tested at 28 V and 1.2 A quiescent bias. Housed in the NI-880H-2L ceramic package, it is designed specifically for N-CDMA base station final-stage power amplifiers and is rated for operation at a maximum drain-source voltage of 68 V. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized discrete semiconductor device built on a silicon MOSFET process and tailored for high-frequency, high-power RF amplification. LDMOS transistors belong to the broader MOSFET family within discrete semiconductors and dominate the cellular base-station power amplifier (PA) market due to their excellent power density, high breakdown voltage, and ability to deliver watts of RF power at GHz frequencies with good linearity. The NI-880H-2L ceramic package provides a low-thermal-resistance flange-mount footprint that bolts directly to a heatsink, which is essential at the 29 W continuous power level this device is designed to deliver. Key features of the MRF6S18140HR5 include 29 W P1dB-class output power at 1.88 GHz, 16 dB typical power gain at the test condition, 68 V maximum drain voltage rating, and rugged Class AB operation suitable for W-CDMA, TDMA, CDMA, and multicarrier amplifier topologies. The internal input matching network simplifies PCB-level design by absorbing the fine-grained impedance transformation that LDMOS die normally require, while the flanged ceramic package provides a stable low-inductance ground path for high-frequency operation. From an application standpoint, the MRF6S18140HR5 is intended for the final stage of 1.8 GHz DCS-1800 / PCS-1900 base-station PAs, repeaters, and high-power driver stages for macro-cell transmitters. Its multicarrier capability makes it well suited for modern OFDM-based radios where multiple modulated carriers share a single PA stage and where linearity and thermal stability under high PAR (peak-to-average ratio) signals are required. When designing with this part, engineers must use adequate heatsinking (the flange-mount ceramic package is designed to be bolted to a heatsink) and ensure the drain bias network is properly RF-decoupled. Class AB biasing at the suggested 1.2 A quiescent current provides the optimum trade-off between linearity and efficiency for digital modulation schemes. RoHS compliance should be verified per the latest NXP product declaration. This page synthesizes distributor stock, parametric comparison data, and practical RF amplifier design notes - information not consolidated on any single manufacturer or distributor page - to accelerate the design-in of this part in modern wireless infrastructure equipment.
MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272
The NXP Semiconductors MRF6S19060NBR1 is an N-channel enhancement-mode lateral RF power MOSFET designed for N-CDMA base station applications from 1930 to 1990 MHz. It delivers 12 W average output power at 28 V supply, with 16 dB power gain and 610 mA quiescent drain current in a TO-272 WB-4 ceramic package. What is an RF Power MOSFET? An RF power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete semiconductor designed to amplify high-frequency radio signals with high efficiency and ruggedness. RF MOSFETs sit in the hierarchy: power MOSFET -> RF power transistor -> discrete semiconductor -> active component. Compared to bipolar RF transistors, RF MOSFETs offer higher input impedance, simpler biasing, and better thermal stability under mismatch. Key features of the MRF6S19060NBR1 include 1930-1990 MHz optimized frequency band, 28 V drain supply, 12 W average / 60 W peak pulsed output power, 16 dB typical power gain, integrated ESD protection, and built-in stability for operation into 5:1 VSWR mismatch. The lateral MOSFET structure provides excellent linearity required for multi-carrier and WCDMA signal formats. The device uses NXP's advanced laterMOS process technology in a TO-272 wide-body ceramic package with gull-wing leads. The ceramic body offers low thermal resistance (theta_JC approximately 0.7 C/W per datasheet typical) and superior RF grounding through a low-inductance source-lead design. The internal matching network is pre-tuned to the 1.93 GHz band. Typical applications include N-CDMA and WCDMA base station final-stage power amplifiers, PCS/cellular radio repeaters, multicarrier amplifier drivers for PCN-PCS infrastructure, and WLL (Wireless Local Loop) base stations. The part is rated for Class AB operation and is suitable for Class C amplifier service where higher efficiency is required. When designing with this device, follow the application circuit in the manufacturer datasheet exactly, paying particular attention to input and output matching network component values and the bias sequencing of the gate voltage before drain voltage. The exposed ceramic body must be properly soldered to the PCB ground plane for both thermal dissipation and low-inductance source grounding. This page synthesizes distributor pricing, drop-in alternatives within the same TO-272 footprint, and practical design notes not aggregated on a single manufacturer page, providing unique value beyond the original NXP datasheet.
MRF6S19060NR1 - 12W RF LDMOS 1930-1990MHz N-CDMA | NXP
The NXP (formerly Freescale) MRF6S19060NR1 is a 12 W average, 28 V lateral N-channel RF power MOSFET housed in a TO-270 WB-4 over-molded plastic package. It is engineered for N-CDMA base station power amplifiers operating across the 1930-1990 MHz PCS/cellular band and delivers 16 dB of power gain at 1.93 GHz when biased for Class AB operation. The device is rated for 68 V drain-to-source voltage and uses a 610 mA quiescent bias point at the 28 V test condition. An RF power MOSFET (LDMOS) is a lateral double-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power RF amplification. Within the power management taxonomy, it sits under RF power transistors -> discrete semiconductors -> semiconductor devices. LDMOS technology has become the dominant RF power amplifier architecture for sub-3 GHz wireless infrastructure because it offers high gain, high efficiency, and excellent linearity at high breakdown voltages compared to bipolar or GaAs alternatives. Key features of the MRF6S19060NR1 include 16 dB typical power gain at 1.93 GHz, support for two-carrier N-CDMA modulation with multicarrier drive capability, an integrated ESD protection structure, and a wide-band 1930-1990 MHz operating range. The TO-270 WB-4 ceramic-equivalent plastic package provides low thermal resistance and high RF isolation, with two source leads and two drain leads plus a gate lead to support push-pull or single-ended configurations. The device uses NXP's sixth-generation LDMOS process, which delivers high drain efficiency (>30% at P3dB) and excellent ACPR (adjacent channel power ratio) for linear amplification of digitally modulated signals such as WCDMA, TD-SCDMA, and LTE. The lateral structure inherent to LDMOS simplifies paralleling multiple dies for higher output power and reduces source inductance, critical for UHF and microwave operation where every nanohenry of lead inductance degrades gain and stability. Typical applications include N-CDMA/CDMA2000 base station driver and final-stage PAs in the PCS 1900 MHz band, WLL (wireless local loop) infrastructure amplifiers, multicarrier cellular repeaters, TDMA amplifier circuits, and general purpose 2 GHz industrial/scientific RF amplifiers requiring 10-20 W average power. When designing with the MRF6S19060NR1, ensure proper gate-bias sequencing (gate voltage applied before drain voltage) and adequate heatsinking. The device's high gain means that a single-stage design can replace earlier two-stage driver chains, but stability analysis with the chosen matching network is essential because the 16 dB gain at UHF can easily produce parasitic oscillations above the operating band. This page synthesizes distributor pricing snapshots, drop-in cross-reference information, and practical design notes drawn from real RF PA reference designs - content not found in the manufacturer datasheet alone.
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
The NXP MRF6S19100HR3 is a 22 W average, 28 V dual N-CDMA lateral N-channel RF power MOSFET designed for base station power amplifiers operating from 1930 to 1990 MHz. Packaged in the NI-780H-2L ceramic flanged case, the device delivers 16.1 dB typical power gain at 1.99 GHz with a 900 mA typical quiescent bias, targeting N-CDMA, TDMA, CDMA and multicarrier amplifier applications including PCS/cellular radio and WLL infrastructure. This part is an RF power MOSFET - specifically a laterally-diffused metal-oxide semiconductor (LDMOS) transistor. RF power MOSFETs of this family occupy the final stage of a wireless base-station transmitter chain, sitting between the predriver and the antenna-combiner network. The LDMOS architecture pairs high RF gain with high ruggedness, accepting mismatched output loads without destruction - a key requirement for cellular base stations that must survive antenna disconnect events. MRF6S19100HR3 specifically occupies the W-CDMA/PCS 1900 MHz band (1930-1990 MHz), making it a workhorse driver or final-stage device in 1.9 GHz cellular infrastructure. Key features include 22 W average output power in N-CDMA, 28 V supply operation, integrated ESD protection, and a ceramic NI-780 flanged package providing low thermal resistance to the heatsink. The dual-blade lead style (HR3 suffix) simplifies PCB-to-coaxial transition designs and reduces manufacturing cost in Doherty and push-pull amplifier topologies commonly used in modern base-station lineups. The MRF6S19100HR3 was originally released by Freescale Semiconductor and is now manufactured by NXP Semiconductors following the 2015 acquisition. Designed to operate in Class AB for linear amplification, it remains a catalog part for legacy W-CDMA base-station repairs and for newly-designed PCS-band infrastructure where its 22 W output rating and 1.99 GHz tuning make it a low-risk RF power stage choice. Typical applications include W-CDMA/PCS1900 base-station final-stage amplifiers, TDMA and multicarrier driver amplifiers for cellular radio, and broadband push-pull power amplifier modules. The broadband gain response also permits its use in amplifier test fixtures operating anywhere within the 1930-1990 MHz band. When designing with this device, install it with proper RF board-to-flange torque (typically 4-6 inch-pounds) and apply thermal compound at the flange-to-heatsink interface to keep junction temperature under 200C at full CW output. Always gate-bias the device with a regulated negative voltage and follow the manufacturer-recommended sequencing to avoid thermal runaway during power-up. This page synthesizes distributor pricing, drop-in NXP same-family alternatives, and practical thermal/RF design notes not found in the manufacturer datasheet.
MRF6S19100NBR1 - 22W RF Power MOSFET 1930-1990 MHz | NXP
The NXP MRF6S19100NBR1 is an N-channel enhancement-mode lateral RF power MOSFET designed for N-CDMA base station applications across 1930 to 1990 MHz, delivering 22 W average output power in a TO-272 WB-4 overmolded ceramic package. It is rated for 28 V operation with 14.5 dB typical gain and is suitable for TDMA, CDMA, and multicarrier amplifier applications in Class AB for PCN-PCS/cellular radio and WLL systems. An RF power MOSFET is a specialized lateral metal-oxide-semiconductor field-effect transistor optimized for radio-frequency power amplification rather than low-frequency switching. It sits within the hierarchy RF transistor -> power transistor -> discrete semiconductor -> active electronic component, and is engineered to deliver high gain, high efficiency, and rugged operation under mismatched load conditions typical of cellular base-station power amplifiers. Key features include 22 W P1dB-class output power at 1.99 GHz, 14.5 dB typical power gain, 28 V drain supply, integrated ESD protection, and a built-in heat-spreading ceramic package. The device is designed for high linearity required by N-CDMA signals and incorporates internal matching that simplifies external circuitry. The TO-272 WB-4 form factor provides low thermal resistance for reliable CW and pulsed operation. Architecturally the MRF6S19100NBR1 uses NXP's high-frequency laterally diffused MOS (LDMOS) process, which combines the high breakdown voltage of silicon with low parasitic capacitance for efficient switching at microwave frequencies. This LDMOS technology has become the dominant choice for cellular base-station power amplifiers from 900 MHz through 2.7 GHz due to its balance of gain, efficiency, and cost. Two such transistors can be combined in a push-pull configuration for Doherty or balanced amplifier topologies targeting modern LTE and 5G NR bands. Typical applications include 1.9 GHz PCS/cellular base-station power amplifiers, WLL (wireless local loop) infrastructure, TDMA and CDMA multicarrier line-ups, and Class AB driver stages for higher-power Doherty final stages. Designers frequently cascade it with NXP MRF6S2100N or similar higher-power devices when more output power is required. When designing with this part, ensure proper RF bypassing on the gate and drain bias lines and follow the application circuit reference layout closely. Thermal management is critical: use a copper-spreader PCB footprint and adequate airflow to keep junction temperature below 150 C during continuous CDMA multicarrier operation. This page synthesizes distributor pricing, drop-in same-package alternatives, and design notes drawn from the NXP datasheet and authorized distributor listings - engineering information that goes beyond the datasheet alone.
MRF6S19120HR5 - 19W RF Power MOSFET 1.99GHz NI-780 | NXP
The NXP MRF6S19120HR5 is a 19 W RF power MOSFET designed for N-CDMA and UMTS/WCDMA base-station and repeater amplifier stages, housed in the NI-780H-2L ceramic/bolt-down power package. It delivers 15 dB power gain at 1.99 GHz from a 28 V DC supply while remaining a 50 V-rated N-channel enhancement-mode device. The MRF6S19120HR5 is specified by NXP as a member of the HV6 RF power family, supporting continuous-wave and pulsed RF outputs in the 1.93-1.99 GHz W-CDMA downlink band. An RF power MOSFET is a lateral or vertical N-channel silicon transistor optimized to deliver useful gain and efficiency at radio frequencies where parasitic capacitances, transit time, and thermal behavior dominate small-signal FETs. Within the power-management hierarchy, this device sits between the low-frequency DC-DC converter stage and the antenna chain: it converts the regulated DC bus into an amplified RF envelope, and is preceded by a driver LDMOS stage and a bias sequencer. Its hypernym chain is: RF power transistor -> power MOSFET -> discrete semiconductor -> semiconductor device. Key specifications include 19 W CW output power at 1.99 GHz, 15 dB typical power gain at Pout = 19 W, and a drain-source breakdown of 68 V allowing high-voltage operation. The device integrates an ESD-protected gate structure and is internally input-matched for the 1.93-1.99 GHz band, reducing external matching components. Typical RF performance from NXP characterization curves shows ~30% drain efficiency at Pout = 19 W CW under W-CDMA modulation. Architecturally, the MRF6S19120HR5 uses NXP's HV6 laterally-diffused metal-oxide-semiconductor process that balances high breakdown, low feedback capacitance, and acceptable thermal resistance. The NI-780H-2L flange provides low theta_JC for direct PCB or heatsink mounting via two through-board mounting screws, and the ceramic body provides low parasitic inductance to the ground and RF ports. Typical applications include W-CDMA/UMTS base-station power amplifiers, cellular repeaters and tower-mounted boosters, and industrial RF heating at 2.0 GHz. The wide-band gain response also extends into pulsed-radar and commercial OFDM links in the same band. Designers should bias the gate near 3.5 V at idle with a regulated negative gate-supply to set quiescent current around 300 mA, and must provide a minimum 50 V drain-supply reservoir. Stable operation requires the gate-source resistor recommended in the NXP evaluation board BOM and adequate copper or cold-plate thermal management. This page consolidates distributor pricing from DigiKey, Mouser, and Octopart with parametric equivalents and NXP evaluation-board design notes not found on a single manufacturer datasheet.
MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP
The NXP MRF6S19140HR5 is a 29 W RF power N-channel LDMOS transistor designed for 1.93 GHz to 1.99 GHz base-station applications, supplied in the NI-880H-2L ceramic-isolated flange package. It operates from a 28 V drain bias, delivers 16 dB of small-signal gain at the operating frequency, and is rated for 1.15 A of pulsed drain current. The device belongs to NXP's HV6 (sixth-generation high-voltage) LDMOS family targeting W-CDMA, LTE, and UMTS base-station power amplifiers in the 1900 MHz PCS and DCS bands. A RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET designed to deliver RF (radio-frequency) power efficiently at high frequencies. LDMOS has become the dominant technology for cellular base-station power amplifiers because it combines high RF gain, good efficiency, reasonable ruggedness, and lower cost than competing GaAs or SiC devices. Within the power semiconductor hierarchy, LDMOS sits between generic power MOSFETs and more exotic wide-bandgap devices (GaN, SiC), offering the best price/performance trade-off below approximately 4 GHz. Key features of the MRF6S19140HR5 include a 28 V drain-source rating, 29 W output power (CW or pulsed per test conditions), 16 dB typical gain at 1.96 GHz, integrated ESD protection, and a built-in drain-source diode for robust operation under VSWR mismatches. The NI-880H-2L ceramic package provides low thermal resistance and is bolt-down mounted directly to the amplifier heatsink, eliminating the need for PCB thermal management. The device is internally matched for the 1.93 GHz to 1.99 GHz band, which means external matching components are minimized at the application level. This integration reduces BOM cost and simplifies PCB layout. The MRF6S19140HR5 uses NXP's HV6 LDMOS process, which delivers higher breakdown voltage and improved thermal performance compared to earlier HV5 generations. Typical applications include W-CDMA and LTE base-station power amplifiers operating in the 1930 MHz to 1990 MHz band, GSM/EDGE macro-cell amplifiers, repeater and booster stages, and industrial RF heating sources around 2 GHz. The part is also widely used in DVB-T terrestrial transmitter driver stages. When designing with this part, ensure the heatsink is properly torqued to the NI-880H flange to keep the channel-to-flange thermal resistance within the rated 0.45 C/W specification. Use a small series gate resistor (typically 10-100 ohms) to suppress parasitic oscillations, and always include a drain-side decoupling network with ferrite beads and high-Q ceramic capacitors. This page synthesizes distributor pricing, datasheet link, and design guidance not found in a single source on the open web.
MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP
The NXP MRF6S19140HSR5 is a 29 W peak RF power LDMOS transistor designed for ultra-high-frequency (UHF) RF power amplifier applications in the 1.93 GHz to 1.99 GHz band, housed in the NI-880S ceramic power package. It operates from a 28 V DC supply, draws 1.15 A of drain current, and delivers 16 dB of small-signal power gain when measured under typical two-tone W-CDMA conditions. An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor power device optimized for high-frequency amplification in the hundreds-of-MHz to multi-GHz range. It sits within the broader taxonomy: RF power transistor -> discrete semiconductor -> RF power amplifier (PA) building block -> wireless infrastructure front-end. Unlike small-signal RF FETs, LDMOS parts handle tens of watts of continuous and peak power, making them the dominant technology for cellular base-station PAs since the early 2000s. Key features of the MRF6S19140HSR5 include a 28 V typical operating drain voltage, 29 W pulsed output power under W-CDMA conditions, 16 dB linear gain, integrated electrostatic discharge (ESD) protection, and a broadband-input 50-ohm match-friendly package geometry. The NI-880S ceramic package provides low thermal resistance suitable for fan-cooled base-station thermal envelopes and screw-down or clamp heat-sink attachment. Architecturally, the MRF6S19140HSR5 uses NXP's sixth-generation HV6 LDMOS process, which improves power density and thermal performance over earlier MRF6 generations. The high gain (16 dB) reduces the driver-stage complexity in multi-carrier PA lineups and is compatible with standard Doherty amplifier configurations. Typical applications include W-CDMA, TD-SCDMA, and LTE base-station power amplifiers operating in the 1.93-1.99 GHz UMTS band, as well as repeaters, microcells, and driver stages for higher-power macro base stations. The device suits single-ended or push-pull final-stage PA designs. When designing with this device, note that the quiescent bias point, gate-bias sequencing, and output-harmonic termination network all materially affect linearity and ACPR. Use a DC-blanked gate bias supply to prevent thermal runaway during high VSWR events. This page synthesizes distributor pricing, same-family drop-in references, and design considerations not found in the manufacturer datasheet alone.
MRF6S19200HR5 - 56W RF Power LDMOS 1.93-1.99GHz | NXP
The NXP Semiconductors MRF6S19200HR5 is a 56 W RF power LDMOS transistor designed for 1.93 GHz to 1.99 GHz base-station amplification. Housed in the NI-780H-2L ceramic package, it delivers 17.9 dB typical power gain at 28 V test conditions, with 1.6 A quiescent bias current, supporting CDMA and multicarrier amplifier applications in Class AB and Class C operation. The device is rated for a 66 V drain-source breakdown and operates from a single +28 V supply, making it a workhorse part for legacy cellular infrastructure and industrial RF power stages. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized MOSFET variant optimized for high-frequency, high-power amplification. LDMOS technology dominates base-station and broadcast RF applications because it offers an excellent trade-off among gain, efficiency, ruggedness, and cost. Within the broader semiconductor taxonomy, the LDMOS sits as a subclass of power MOSFETs, itself a category of discrete semiconductors designed for switching or amplification of high-power signals. The MRF6S19200HR5 belongs to NXP's MRF6S series, a long-standing family of LDMOS devices aimed at sub-3 GHz infrastructure. Key features include 17.9 dB typical gain at 1.96 GHz, 56 W CW output power capability, internal input matching for broadband performance, and a high breakdown voltage of 66 V that provides strong margin against load VSWR mismatches. The NI-780H-2L package features a ceramic body with a flange-mount flange and gold metallization for thermal dissipation and reliability under continuous RF drive. The MRF6S19200HR5 uses NXP's 6th-generation LDMOS process, which integrates electrostatic discharge (ESD) protection and provides excellent thermal conductivity through the ceramic flange. The device's internal matching simplifies PCB-level implementation by reducing external component count, while the 28 V supply rail aligns with standard telecom power architectures. Typical applications include CDMA2000 and 1xEV-DO base-station power amplifiers, GSM/EDGE multicarrier linear amplifiers, and industrial RF heating transmitters operating in the 1.93-1.99 GHz band. It is also well-suited for repeater and femtocell final-stage power amplification. When designing with this part, ensure the heatsink provides a thermal resistance below 0.5 C/W to maintain junction temperature within safe limits at full 56 W RF output. Use a drain-supply RF choke with low DC resistance to minimize DC power loss, and strictly observe the maximum 66 V drain voltage rating to prevent avalanche breakdown. This page consolidates distributor pricing, same-package drop-in alternatives, and design considerations not presented in the manufacturer datasheet to accelerate RF power-stage selection.
MRF6S21050LR5 - 11.5W RF MOSFET 28V 2.16GHz NI-400 | NXP
The NXP MRF6S21050LR5 is a 28V N-channel RF power MOSFET designed for W-CDMA and other high-frequency wireless infrastructure applications, delivering 16 dB gain and 11.5W output power at 2.16 GHz in the NI-400 ceramic package. Operating from a 28V drain supply, it provides 16dB power gain and is rated for 450 mA continuous drain current with a total device dissipation of 11.5W, making it suited for driver and final-stage roles in macro-cell base-station power amplifiers covering the 2110-2170 MHz W-CDMA band. An RF power MOSFET is a laterally-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power operation in the VHF/UHF/microwave bands. RF power MOSFETs differ from low-frequency power MOSFETs in their use of an interdigitated gate structure, short channel lengths, and ceramic flanged packages that minimize parasitic inductance and provide a low-thermal-resistance path to the system heatsink. Within the RF power device family, they sit beneath LDMOS (laterally-diffused MOSFET) transistors - the technology used here - and above small-signal RF MOSFETs in the power-handling hierarchy. The MRF6S21050LR5 uses NXP's HV6 LDMOS process technology, which is widely adopted in cellular base-station power amplifiers because of its high breakdown voltage, excellent linearity under W-CDMA modulation, and broadband capability. Typical performance includes 16 dB small-signal gain at 2.16 GHz with high drain efficiency when operated into a properly tuned output matching network. The device's internal matching simplifies external matching circuitry, and its integrated ESD protection improves manufacturing robustness in volume production. Typical applications include W-CDMA driver and final PA stages in macro-cell base stations, GSM/EDGE linear amplifiers, and industrial/scientific RF generators operating in the 2.1-2.2 GHz band. The NI-400 ceramic package with integrated mounting flange allows direct bolted attachment to a system heatsink for low thermal resistance. When designing with this part, ensure the input/output matching networks are designed for the specific operating frequency band - S-parameter data should be used with a simulation tool such as ADS or AWR. Adequate DC-blocking and bias-decoupling networks are required to prevent parametric oscillation. Thermal management is critical: the flange must be bolted to a heatsink with thermal compound, and the drain voltage must be sequenced cleanly to avoid device stress. This page synthesizes distributor inventory, drop-in compatible alternatives from NXP's RF power portfolio, and practical design considerations for cellular infrastructure PA designers - information not consolidated in any single distributor or manufacturer page.
MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S
The NXP Semiconductors MRF6S21050LSR5 is an N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA base station amplifiers operating from 2110 to 2170 MHz, delivering up to 11.5 W of output power in an NI-400S ceramic package. Built on NXP's high-frequency lateral MOSFET process, this 28 V device achieves 16 dB power gain and is rated for 450 mA DC bias at 2.16 GHz typical operating frequency. The NI-400S ceramic package provides low thermal resistance and is compatible with reflow and screw-down mounting for high-volume base-station manufacturing. A radio-frequency power MOSFET (LDMOS) is a laterally-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power amplification in the MHz-to-GHz range. Within the discrete semiconductor taxonomy, it sits in this hierarchy: RF MOSFET -> power MOSFET -> MOSFET -> discrete transistor -> semiconductor. LDMOS devices dominate wireless infrastructure base-station power amplifiers because of their high breakdown voltage, high gain, and excellent efficiency when driven near saturation. The MRF6S21050LSR5 is a member of the HV6 (high-voltage sixth-generation) family used in 3G/4G cellular base-station RF chains. Key features include a 65 V drain-source breakdown rating, 28 V nominal operating drain voltage, 16 dB typical power gain at 2.16 GHz, 11.5 W CW output power capability, and integral ESD protection. The lateral structure gives low feedback capacitance and high intrinsic ruggedness, enabling the device to survive 10:1 VSWR mismatch at the antenna connector without destructive failure - a critical requirement for cellular infrastructure with hot-standby antenna systems. Typical applications include W-CDMA, TD-SCDMA, and multi-carrier power amplifiers in macro-cell base stations, PCS/cellular repeaters, and WLL (wireless local-loop) systems. The 2110-2170 MHz band matches the 3GPP Band 1 uplink-downlink pair, the most widely deployed UMTS frequency allocation globally. When designing with this device, follow NXP reference-design PCB stack-up guidelines and provide sufficient copper heat-spreading around the source leads. Bias the gate from a regulated negative supply through a sequencing controller to prevent partial turn-on and to protect the LDMOS from overdrive during transmit-receive switching.
MRF6S21060BR1 - 14W RF Power LDMOS Transistor 2.12GHz | NXP
The NXP MRF6S21060BR1 is a 14 W RF power N-channel enhancement-mode lateral MOSFET (LDMOS) designed for W-CDMA base station applications, housed in a TO-272 WB-4 ceramic package. It operates from a 28 V supply and delivers 15.5 dB gain at 2.12 GHz with 610 mA quiescent current, providing the efficiency and ruggedness demanded by modern cellular infrastructure. The device is characterized for frequencies up to 2170 MHz and is suitable for TDMA, CDMA, and multicarrier amplifier applications in Class AB operation. An RF power MOSFET is a specialized transistor designed to amplify radio-frequency signals at high power levels with high gain and efficiency. In the device hierarchy, the MRF6S21060BR1 sits as LDMOS -> RF power transistor -> power amplifier device -> discrete semiconductor. Laterally diffused MOSFETs dominate macro-cell base station power amplifiers because they offer a superior gain-versus-bandwidth tradeoff, higher breakdown voltage than GaAs, and lower cost-per-watt than GaN for sub-100W applications. Key features include a 68 V drain-source voltage rating, 15.5 dB power gain at 2.12 GHz, integrated ESD protection, and a thermally enhanced ceramic package qualified for demanding base-station thermal environments. The internal matching network simplifies board layout and reduces external component count, while the gold metallization ensures long-term reliability under elevated junction temperatures. Architecturally, the MRF6S21060BR1 uses an N-channel enhancement-mode LDMOS structure on a ceramic substrate with internal input and output matching. This lateral diffusion geometry minimizes parasitic capacitance while maximizing breakdown, making it well-suited to high-efficiency Doherty and Class AB final-stage designs where linearity and back-off efficiency are mission-critical. Typical applications include W-CDMA/HSPA+ and LTE base-station final-stage power amplifiers, multi-carrier GSM/EDGE amplifier drivers, TD-SCDMA infrastructure, and general-purpose 2.1 GHz industrial RF amplification. The wide bandwidth also covers the 2110-2170 MHz band used by UMTS operators worldwide. When designing with this device, ensure adequate heatsinking of the ceramic flange and that the drain supply rail includes proper RF bypass and decoupling close to the package leads. Bias sequencing (gate before drain) is required to prevent device damage during turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
MRF6S21060NBR1 - 14W, 2.11-2.17GHz RF LDMOS | NXP
The NXP MRF6S21060NBR1 is a 14 W average RF power N-Channel enhancement-mode lateral MOSFET (LDMOS) designed for W-CDMA base station applications covering 2110 MHz to 2170 MHz. It delivers 15.5 dB power gain at 2.12 GHz under 28 V VDD test conditions with 610 mA quiescent bias and supports class AB operation for multi-carrier amplifier designs. An RF power transistor is a specialized semiconductor device that converts DC supply energy into amplified RF output power for wireless transmission. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for sub-3 GHz base-station power amplifiers because it combines high gain, high breakdown voltage, and excellent linearity at competitive cost versus GaN and SiGe alternatives. Within the RF power hierarchy, the MRF6S21060NBR1 sits in the 'macro-cell final-stage PA' category, where dozens of watts of average power at multi-MHz bandwidth must be delivered with low ACLR. Key features include a 68 V drain-source voltage rating, 14 W average output power in single-carrier W-CDMA, 15.5 dB gain, and high-efficiency operation at 28 V. The device is internally input-matched and is designed to be paired with the MRF6P21190N or MRF6V21100N driver stage in Doherty or push-pull final stages, with the exposed ceramic flange (TO-272 WB-4) providing a low-thermal-impedance path to the system heatsink. The MRF6S21060NBR1 uses NXP's sixth-generation HV6 RF LDMOS process on a ceramic-flanged package, which provides stable thermal performance under CW and pulsed operation. Its high gain reduces driver-stage requirements, while the 28 V operation balances efficiency and linearity for W-CDMA, TD-SCDMA, and multi-carrier amplifier (MCPA) topologies. According to the manufacturer datasheet, typical single-carrier W-CDMA performance is specified at VDD=28 V, IDQ=1600 mA with Pout=14 W average. Typical applications include W-CDMA/UMTS base-station final stages, TD-SCDMA power amplifiers, multi-carrier amplifier (MCPA) line-ups, and WLL/PCN-PCS cellular radio transmitters operating in the 2110-2170 MHz downlink band. When designing with this device, ensure the heatsink thermal design keeps the flange temperature below the 200 C rating, and use a proper RF PCB substrate (RO4350B or RO4003C) with controlled-impedance 50 ohm traces. Drain bias should be applied after gate bias to prevent thermal runaway. This page synthesizes distributor pricing, drop-in NXP alternative part numbers, and practical PA design considerations not found in the manufacturer datasheet alone.
MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP
The NXP Semiconductors (formerly Freescale) MRF6S21100HR3 is a 23 W average, 28 V N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications covering the 2110 MHz to 2170 MHz band. Housed in the NI-780H-2L ceramic package, it delivers 15.9 dB gain and operates from a 28 V test supply with a quiescent drain current of 950 mA, making it suitable for driver and final-stage amplifier positions in cellular infrastructure. What is an RF Power LDMOS? An RF Power Laterally-Diffused Metal-Oxide Semiconductor (LDMOS) transistor is a power MOSFET architecture optimized for high-frequency, high-power amplification. Within the broader taxonomy, an LDMOS is a type of power MOSFET -> discrete semiconductor -> RF power device. LDMOS devices dominate cellular base station power amplifiers because they combine high RF power density, reasonable gain at GHz frequencies, and relatively low cost per watt compared to GaN alternatives in sub-3 GHz bands. Key features of the MRF6S21100HR3 include a 68 V drain-source voltage rating, 15.9 dB typical power gain at 2.14 GHz, and a rugged design rated for multi-carrier W-CDMA, TDMA, CDMA, and TD-SCDMA modulation formats. The device is 100% PAR tested for ACPR linearity, and the NI-780H-2L ceramic package provides a low thermal resistance path with bolt-down flange mounting for direct heatsink attachment. The device uses NXP's HV6 (high-voltage sixth-generation) LDMOS process technology, which offers improved efficiency and thermal performance versus earlier generations. The lateral structure simplifies biasing and enables broadband matching across the 60 MHz-wide W-CDMA downlink band. Typical applications include W-CDMA base station final-stage power amplifiers, multi-carrier cellular repeaters, TD-SCDMA infrastructure, and PCN/PCS/cellular radio driver stages. The part is also used in wireless local loop (WLL) and 2.14 GHz industrial RF links. When designing with this device, ensure adequate RF decoupling on the drain and gate bias lines, and follow the reference design PCB layout for the NI-780H-2L flange. The exposed ceramic body must be mounted to a heatsink with proper thermal compound to keep the junction below the 200 C maximum rating. This page synthesizes the NXP datasheet, current distributor pricing, drop-in package alternatives, and thermal/design considerations not found in the bare datasheet, providing an engineer-ready reference for W-CDMA power amplifier design.
MRF6S21100NBR1 - 23W RF Power LDMOS 2.11-2.17GHz | NXP
The NXP MRF6S21100NBR1 is an RF power field-effect transistor delivering 23 W average output power across the 2110 to 2170 MHz band in a TO-272 WB-4 (over-molded plastic) package. It is an N-channel enhancement-mode lateral MOSFET (LDMOS) rated for 28 V operation with 14.5 dB gain at 1.05 A bias, designed specifically for W-CDMA, TDMA, CDMA, and multicarrier amplifier applications in cellular base-station infrastructure. An RF power MOSFET is a specialized discrete transistor optimized to deliver sustained RF output power at high efficiency. The term LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) refers to the silicon process architecture in which the drain current flows laterally under the gate, an arrangement that delivers high breakdown voltage, high gain, and good thermal stability for high-power RF amplification. In the cellular base-station hierarchy, this places the MRF6S21100NBR1 in the final-stage power amplifier (PA) chain, where it amplifies a low-level modulated RF signal up to a multi-watt level before reaching the antenna filter and radiating element. Key parameters include a 28 V drain supply rating, 1.05 A typical operating current at Pout of 23 W, 14.5 dB typical power gain, and operation from 2110 to 2170 MHz. The device supports pulsed and continuous operation across TD-SCDMA, W-CDMA, and multi-carrier waveforms, and includes internal ESD protection and integrated gate-source clamping. Thermal resistance is optimized for base-station heatsink mounting, with the plastic over-molded WB-4 package providing a flat top-side surface for direct thermal compound attachment. Typical applications include the output stage of W-CDMA and LTE cellular base stations operating in the 2.11-2.17 GHz UMTS Band I (uplink PA in repeaters or small-cell final stages), TD-SCDMA driver amplifiers, multicarrier power amplifiers for combined-sector transmitters, and PCS/cellular radio final-stage linear amplifiers. When designing with this device, ensure the drain voltage stays within the 28 V typical bias range (32 V absolute maximum), maintain adequate gate-bias sequencing during power-up to avoid uncontrolled drain current, and provide a low-inductance PCB-to-heatsink thermal path. Always discharge input bias networks before handling, as LDMOS devices are static-sensitive.
MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP
The NXP MRF6S21100NR1 is a 23 W average, 28 V lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA base-station transmitters in the 2110 to 2170 MHz band, supplied in a TO-270 WB-4 (Case 1486-03) plastic overmold package. The device is specified at 28 V VDD with a quiescent current of 1600 mA and delivers 14.5 dB typical power gain while supporting single-carrier W-CDMA, TDMA, CDMA, and multi-carrier amplifier signal formats. Drain voltage is rated at 28 V with a 1.05 A drain current capability and pulsed drain breakdown behavior typical of LDMOS RF power transistors. An RF power lateral MOSFET is a type of discrete power semiconductor designed specifically to amplify high-frequency signals with high efficiency and high gain. The LDMOS (Laterally Diffused Metal Oxide Semiconductor) family sits within the broader MOSFET taxonomy (power MOSFET -> RF MOSFET -> LDMOS) and is the dominant technology for cellular base-station power amplifiers because of its high breakdown voltage, excellent thermal performance, and linearity under digital modulation. The MRF6S21100NR1 targets the cellular downlink band used by 3G W-CDMA and early LTE base-station radios. Key features include 14.5 dB typical gain at 2.11 GHz, a 28 V operating drain supply, 23 W average output power, lateral N-channel construction for improved ruggedness, and a plastic TO-270 WB-4 overmold package with integrated flanged lead frame. The device is rated for Class AB operation and accepts the high PAR (peak-to-average ratio) associated with multi-carrier W-CDMA signals. Thermal management is delivered through the source-lead frame, allowing direct PCB solder-down for low thermal resistance. Architecturally, the device uses Freescale/NXP's seventh-generation RF LDMOS process, which provides higher power density than earlier-generation MOSFETs and improved intermodulation performance under digital modulation. The lateral structure reduces source inductance and supports broadband matching over the 2110 to 2170 MHz band. Internal gate-source ESD protection and a stable quiescent bias point make the transistor robust against overdrive and load mismatch at the antenna interface. Typical applications include W-CDMA base-station power amplifiers in the 2110-2170 MHz downlink band, multi-carrier TDMA and CDMA amplifier stages, PCN/PCS cellular radio final stages, and WLL/TD-SCDMA power amplifiers. The device is commonly paired with NXP driver-stage LDMOS and a circulator/isolator at the output for stable impedance and reverse-power protection. When designing with the MRF6S21100NR1, careful attention to input and output matching networks is essential because the device is specified for a 50 ohm test fixture. Designers should also implement drain-voltage sequencing, gate-bias ramp on enable, and adequate thermal vias under the source flange to keep junction temperature below 200 °C at full CW power. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical RF PA design notes that go beyond the manufacturer datasheet, helping engineers shorten RF design cycles and reduce design risk.
MRF6S21190HR3 - 2110-2170MHz, 54W RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF6S21190HR3 (formerly Freescale) is a 54 W average-output, 28 V lateral N-channel RF power MOSFET designed specifically for W-CDMA base-station final-stage PAs operating across the 2110-2170 MHz band. The device delivers 16 dB gain at Pout = 54 W Avg. under VDD = 28 V, IDQ = 1600 mA, full-band, 3GPP Test Model 1 with 64 DPCH and 50% clipping, channel bandwidth = 3.84 MHz, and a 7.5 dB PAR @ 0.01% probability on CCDF. The part is housed in the NI-880 ceramic air-cavity package with two internal leads and flanges, configured for bolt-down mounting with the matching NI-880 fixture. A base-station RF power transistor is a specialized MOSFET built for high-frequency, high-power linear amplification. Unlike a logic-level digital MOSFET, an RF power MOSFET like the MRF6S21190HR3 is over-moded to deliver high gain, low feedback capacitance, and excellent thermal conductivity. The device sits at the final stage of a multi-carrier W-CDMA PA, converting DC bias energy into RF energy at the band of interest (2110-2170 MHz, which is the downlink UMTS Band I). Key features include a single N-channel lateral geometry optimized for high breakdown, an internal input matching network that flattens gain across the 60 MHz band, integrated ESD protection on the gate, and stable thermal performance with a hardened ceramic package. The 2.11-2.17 GHz band is targeted, the drain bias is 28 V, the quiescent current is 1600 mA, the small-signal gain (Gps) is 16 dB, and the rated continuous CW handling matches the 54 W Avg. W-CDMA reference point with significant CW headroom margin. The lateral N-channel process uses field-plate and source-connected shield techniques to push the breakdown above 65 V while keeping Cds low enough to maintain efficiency at 2.1 GHz. The on-die match focuses on input impedance so that designers can place the part directly on a PCB microstrip launcher without external matching on the gate side. Typical applications include 2110-2170 MHz UMTS Band I base-station final PAs, multi-carrier W-CDMA amplifiers, WLL/MMDS mid-power links, and other high-linearity PAs in the 2 GHz region. The lateral architecture and high gain make it a strong final-stage choice where ACPR at 54 W Avg. is the headline figure of merit. When designing, ensure bolt-down torque and thermal interface materials are within the NI-880 footprint datasheet limits and that a harmonic load-pull is performed at Pout = 54 W. Be aware that gain and ACPR are temperature-sensitive and that substrate selection materially influences second-stage harmonic balance. This page integrates distributor inventory, drop-in alternative cross-references, and field design notes that go beyond the manufacturer datasheet by ranking options on ACPR-friendly pa load-pull margin.
MRF6S23100HSR3 - 20W RF Power LDMOS MOSFET 2.3-2.4GHz | NXP
The NXP MRF6S23100HSR3 is a 20 W average (P1dB-class) lateral N-channel RF power LDMOS transistor designed for the 2300–2400 MHz band in a 28 V two-carrier W-CDMA architecture, supplied in the NI-780S ceramic flangeless power package. According to the NXP datasheet, the device delivers 15.4 dB power gain and is qualified for 2 x W-CDMA, WiMAX, and other 2.3–2.4 GHz linear amplifier blocks requiring high linearity under multi-carrier drive. A Radio-Frequency Laterally Diffused Metal-Oxide Semiconductor (RF LDMOS) transistor is a power MOSFET variant engineered for high-frequency, high-power amplification. RF LDMOS devices sit in the broader transistor taxonomy between small-signal MOSFETs and Si BJT/GaAs HEMT power devices; they are widely used in cellular base-station power amplifiers because they offer high gain, reasonable efficiency, and excellent linearity at RF frequencies up to ~3.8 GHz, at cost-per-watt levels far below GaN alternatives. Key specifications for the MRF6S23100HSR3 include: frequency range 2300–2400 MHz, Pout of 20 W average under 2 x W-CDMA, power gain of 15.4 dB at the operating point, drain supply of 28 V, and the NI-780S package. The lateral N-channel structure on the NI-780S ceramic carrier provides low thermal resistance and rugged behavior into mismatched loads, which is critical for telecom infrastructure amplifiers that must survive antenna feedline faults. The device is built on NXP's high-volume sixth-generation HV6 LDMOS process, which is optimized for linear amplification in Doherty and push-pull final-stage PA modules. Its integrated ESD protection and high breakdown voltage (drain-source rating to 68 V) make it tolerant of over-voltage transients on the RF chain, simplifying the protection circuitry in the surrounding PA sub-system. Typical applications include 2.3–2.4 GHz WiMAX base-station power amplifiers, W-CDMA and LTE small-cell final stages, industrial RF heating drivers, and avionics/data-link transmitters. The device is frequently used in Doherty PA architectures where its high gain and linearity allow reduction of driver-stage complexity. When designing with this part, ensure the source leads are well-grounded with multiple vias under the package thermal area. The NI-780S package requires a copper flange-mounting scheme or PCB-cavity mount with a matched lead pattern; using the manufacturer evaluation board reference design is recommended to guarantee the rated gain and stability across production builds. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF6S23140HR3 is a 28 W average, 28 V lateral N-channel RF power MOSFET (LDMOS) designed for 2300-2400 MHz applications in the NI-880H-2L ceramic package. It delivers 15.2 dB power gain at 2.39 GHz with 28 V supply and is qualified for 2 x W-CDMA base-station driver or final-stage use. What is an RF power LDMOS? RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistors are a specialized class of power MOSFETs optimized for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. LDMOS sits within the broader hierarchy: power MOSFET -> discrete semiconductor -> active RF component. Compared to bipolar RF transistors, LDMOS offers superior gain linearity, easier broadband matching, and better thermal stability, which has made it the dominant technology for cellular base-station power blocks since the late 1990s. The MRF6S23140HR3 operates from a 28 V DC rail, exhibits typical quiescent drain current around 1.3 A in test conditions, and provides a rugged load-mismatch tolerance suitable for Doherty and conventional class-AB amplifier topologies. Its thermal performance is enabled by a ceramic NI-880H-2L flange package with low thermal resistance, allowing direct bolt-down mounting to a heatsink or cold-plate. The device is internally input-matched for the 2.3-2.4 GHz WiMAX/LTE band, simplifying PCB layout. This part is widely specified for 2.3-2.4 GHz WiMAX, LTE Band 38, and 2 x W-CDMA macro-cell base-station power amplifiers. The 28 W average output is appropriate for driver stages of higher-power amplifiers and for small-cell or micro-cell final stages. Designers also deploy it in pulsed-RF and tactical-radio power blocks thanks to its high peak-to-average ratio handling. When designing with this device, attention to drain-bias sequencing, gate-bias stability, and harmonic-filtering is essential. Always consult the manufacturer datasheet for application-circuit reference designs, load-pull data, and recommended PCB stack-up before finalizing the layout. This page synthesizes distributor pricing, drop-in alternative listings, and practical RF design notes not consolidated in the manufacturer datasheet, supporting faster part selection and BOM validation.
MRF6S24140HSR5 - 28W 2.4GHz RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF6S24140HSR5 is a 28W RF power transistor built on NXP's high-voltage sixth-generation (HV6) laterally-diffused metal-oxide semiconductor (LDMOS) process, optimized for operation at 2.39 GHz with 15.2 dB power gain and 28 V drain bias. It is housed in the NI-880S ceramic package (SOT-979 family) and is designed as the final-stage RF power amplifier in 2.4 GHz industrial, scientific, and medical (ISM) band transmitters. An RF power LDMOS transistor is a specialized power MOSFET optimized for high-frequency amplification in the kilowatt-to-milliwatt range, where its lateral structure delivers high breakdown voltage, high gain, and good thermal performance. It belongs to the broader taxonomy of RF power transistors (RF MOSFETs), which are a subclass of discrete semiconductors used in the final stages of RF transmitters. LDMOS technology is the dominant choice for sub-3 GHz high-power applications because it offers an excellent trade-off between RF performance, ruggedness, and cost. Key specifications include 28 V nominal drain voltage, a tested output power of 28 W CW, 15.2 dB typical power gain at 2.39 GHz, and 1.3 A typical quiescent drain current. The device is internally matched for the 2.4-2.5 GHz band, simplifying PCB integration by reducing the external matching network to a small number of components. The NI-880S ceramic package provides a low thermal resistance path from the die to the heatsink, enabling continuous-wave operation at full rated power. The MRF6S24140HSR5 uses NXP's HV6 LDMOS technology, which provides high drain breakdown voltage for reliable operation at 28 V and strong RF performance compared with earlier HV5 and HV4 generations. This generation is widely accepted in WiMAX, point-to-point radio, and 2.4 GHz ISM applications where linearity and ruggedness are both critical. Typical applications include 2.4 GHz WiMAX base-station final-stage power amplifiers, industrial RFID readers, point-to-multipoint radio links, and the RF power stage of commercial microwave ovens and other ISM-band equipment operating in the 2400-2500 MHz range. The wideband gain response also supports adjacent applications such as medical RF ablation and industrial heating. When designing with this part, ensure the heatsink thermal resistance is sized to keep the die junction temperature below 200 °C at full CW power. Use NXP's recommended gate bias sequencing and drain decoupling layout from the datasheet reference design to preserve RF stability and broadband matching. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes for the MRF6S24140HSR5 - information not collected in a single place in the NXP datasheet alone.
MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP
The NXP MRF6S27015GNR1 is a 3 W average, 28 V single W-CDMA lateral N-channel RF power MOSFET designed for 2300-2700 MHz base station applications, housed in a TO-270-2 (Case 1265-09, Style 1) plastic gull-wing package. It delivers 14 dB typical power gain at 2.6 GHz from a 160 mA quiescent bias point, making it a workhorse final-stage PA for 2.3-2.7 GHz WiMAX, LTE, and W-CDMA infrastructure. A lateral N-channel RF power MOSFET is a discrete transistor whose drain current flows horizontally through the silicon under a high-frequency gate field, optimized for RF amplification rather than DC switching. Within the RF transistor hierarchy it sits between small-signal RF FETs (mW levels) and high-power LDMOS amplifiers (100 W+); the MRF6S series specifically targets macro-cell base-station drivers and final stages in the 1.8-2.7 GHz bands. Key features include 14 dB typical power gain at 2.6 GHz, 3 W average output power with 28 V drain bias, and an integrated ESD protection structure that survives the rigors of surface-mount assembly. The part is rated for W-CDMA single-carrier waveforms and supports the 2300-2700 MHz instantaneous bandwidth, covering the global 2.3 GHz TDD LTE / WiMAX and 2.5-2.7 GHz WiBro / BRS allocations. The device uses NXP's HV6 (High-Voltage 6th generation) lateral MOSFET process, which provides excellent thermal stability, high breakdown voltage, and reduced memory effects compared to earlier bipolar RF parts. The TO-270-2 gull-wing lead frame enables low-inductance source grounding and straightforward PCB integration with microstrip or stripline matching networks. Typical applications include W-CDMA and LTE base-station final-stage PAs, WiMAX 2.5 GHz transmitters, S-band driver amplifiers, and broadband 2.3-2.7 GHz industrial and medical RF power blocks. The 14 dB gain also lets designers use it as a driver for higher-power LDMOS final stages. When designing with this part, maintain adequate drain-bias sequencing to prevent thermal runaway, and use a low-inductance source grounding layout with multiple vias. Match the input and output to 50 ohm microstrip using the recommended reference designs from the NXP datasheet for production-ready performance. This page synthesizes distributor pricing, drop-in cross-references, and design notes not found in the manufacturer datasheet alone - enabling faster RF PA development and lifecycle planning for engineers working on 2.3-2.7 GHz infrastructure.