BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8
부품 번호: BSZ017NE2LS5IATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.95 | $95.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.64 | $640.00 |
BSZ017NE2LS5IATMA1 개요
A power MOSFET is a voltage-controlled semiconductor switch that modulates current flow between its drain and source terminals in response to a gate-source voltage. Modern N-channel trench MOSFETs such as OptiMOS 5 sit within the broader taxonomy of discrete power semiconductors (MOSFET > transistor > discrete semiconductor), and are the dominant switching element in synchronous buck converters, motor drives, hot-swap controllers, and OR-ing circuits where ultra-low RDS(on) and small package footprint are mandatory. Infineon's OptiMOS 5 generation targets highest power density and energy efficiency in both standby and full-operation regimes.
Key features include RDS(on) of 1.7 mΩ @ VGS=10V, ±16V VGS rating, gate charge of 30 nC @ VGS=10V, and input capacitance of 2000 pF @ VDS=12V. The threshold voltage of 2V @ 250µA simplifies logic-level interfacing, and the TSDSON-8-FL package exposes the die for direct PCB heatsinking. Compared with older OptiMOS 3/4 generations, this part delivers a figure-of-merit reduction that enables higher switching frequencies without exceeding thermal limits.
Typical applications include high-current DC-DC synchronous buck converters, USB Power Delivery (PD) and QuickCharge adapters, hot-swap and OR-ing circuits on 12V/20V distribution rails, e-fuse and battery protection FETs in 1S-3S lithium-ion packs, motor drive half-bridges in robotics and e-bikes, and Class-D audio amplifier output stages. The 1.7 mΩ on-resistance keeps conduction losses below 1% even at 20A, supporting high-efficiency 25V point-of-load designs.
When designing with this part, observe the ±16V absolute maximum VGS rating and avoid exceeding 12V VGS in normal operation to prevent oxide stress. The exposed pad must be soldered to a sufficiently large copper pour (at least 50 mm² on a 1 oz board) to keep the junction within thermal limits at 40A pulses. Place the gate-drive resistor as close as possible to pin 1 to suppress parasitic turn-on.
드롭인 대체품: BSZ017NE2LS5IATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSZ017NE2LS5IATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), Operating Junction Temperature.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSZ036NE2LSATMA1
✅ 드롭인✓ 재고 있음
$0.42 / 개
데이터시트 보기 →BSC018N04LSGATMA1
✅ 드롭인✓ 재고 있음
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데이터시트 보기 →BSC014N04LSATMA1
✅ 드롭인✓ 재고 있음
$0.74 / 개
데이터시트 보기 →IPB027N10N3GATMA1
✅ 드롭인✓ 재고 있음
$1.62 / 개
데이터시트 보기 →BSC097N06NSATMA1
✅ 드롭인✓ 재고 있음
$0.38 / 개
데이터시트 보기 →ISC110N12NM6ATMA1
✅ 드롭인✓ 재고 있음
$0.51 / 개
데이터시트 보기 →BSZ017NE2LS5IATMA1 최대 정격 & 전기적 특성
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (TA) | 27 A |
| Continuous Drain Current (TC) | 40 A |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΩ |
| On-Resistance Test Current | 20 A |
| Gate-Source Voltage (VGS) Rating | ±16 V |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 µA |
| Total Gate Charge Qg | 30 nC @ VGS=10V |
| Input Capacitance Ciss | 2000 pF @ VDS=12V |
| Power Dissipation (TA) | 2.1 W |
| Power Dissipation (TC) | 50 W |
| 동작 접합 온도 | -55°C to +150°C |
| 패키지 | PG-TSDSON-8-FL (8-PowerTDFN) |
| 실장 유형 | Surface Mount |
| Series / Family | OptiMOS 5 25V |
| RoHS 상태 | Compliant |
BSZ017NE2LS5IATMA1 핀 구성
| 핀 1 | Gate — Gate drive input; ±16V VGS absolute max |
| 핀 2 | Source — Source connection, internally bonded to pins 3 and 8 |
| 핀 3 | Source — Source connection |
| 핀 4 | Drain — Drain connection (electrically common with exposed pad) |
| 핀 5 | Drain — Drain connection |
| 핀 6 | Drain — Drain connection |
| 핀 7 | Drain — Drain connection |
| 핀 8 | Source — Source connection |
안전 동작 영역 (DC)
일반적인 애플리케이션
BSZ017NE2LS5IATMA1 적합 용도: 7 애플리케이션s: Synchronous Buck DC-DC Converters, USB Power Delivery (PD) Fast Chargers, Hot-Swap and OR-ing Controllers (12V/20V Rails), Battery Protection (1S-3S Lithium-Ion Packs), BLDC Motor Drive Half-Bridges (Robotics, E-Bikes), Class-D Audio Amplifier Output Stages, E-Fuse and Inrush Current Limiters.
Synchronous Buck DC-DC Converters
The BSZ017NE2LS5IATMA1 excels as the low-side synchronous rectifier in 12V-input buck converters delivering 20-40A to point-of-load rails. Its 1.7 mΩ RDS(on) at VGS=10V keeps conduction losses under 1W at full load, supporting >97% peak efficiency at 500 kHz switching. The 2000 pF Ciss and 30 nC Qg permit fast transition times with a low-side gate driver such as the 1EDN7511B, and the TSDSON-8 exposed pad enables direct PCB heatsinking.
추천
USB Power Delivery (PD) Fast Chargers
In 65W-100W USB PD3.0/3.1 chargers, the BSZ017NE2LS5IATMA1 serves as the primary-side synchronous FET in active-clamp flyback or as the secondary-side synchronous rectifier. Its 25V VDS rating covers 20V EPR outputs with margin, and the 1.7 mΩ on-resistance minimizes secondary-side conduction loss — critical for meeting the 92-94% efficiency targets of CoC Tier-2 and DoE Level-VI charger standards. The small TSDSON-8 footprint also enables 30W/in³ power density.
추천
Hot-Swap and OR-ing Controllers (12V/20V Rails)
The BSZ017NE2LS5IATMA1 is ideal for 12V and 20V hot-swap and OR-ing applications in server and telecom distribution. Its 27A continuous (TA) and 40A (TC) current ratings comfortably handle 240-400W load steps, while the 1.7 mΩ RDS(on) limits steady-state voltage drop to 34 mV at 20A — well below the 50 mV OR-ing tolerance of typical redundant supply designs. Combined with a hot-swap controller like BTS70081EPA, it provides inrush current limiting and reverse-current blocking.
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Battery Protection (1S-3S Lithium-Ion Packs)
For 1S-3S lithium-ion battery packs (3.7V-12.6V nominal, 16.8V peak), the BSZ017NE2LS5IATMA1 functions as the low-side protection FET in standard PCM/BMS circuits. Its 1.7 mΩ RDS(on) at full charge/discharge currents of 20-30A contributes only 35-50 mV drop per FET, preserving usable battery capacity. The 25V VDS rating far exceeds the 12.6V pack voltage, providing ample margin for transient overvoltages, and the ±16V VGS tolerance survives common-mode ESD events at the pack terminals.
추천
BLDC Motor Drive Half-Bridges (Robotics, E-Bikes)
In 24V-36V BLDC motor drive half-bridges for robotics, drones, and e-bikes, the BSZ017NE2LS5IATMA1 pairs with its 60V/100V siblings as the low-side switch in three-phase inverter stages. Its 40A TC rating supports 1-2 kW continuous motor power, while the 30 nC gate charge enables PWM frequencies up to 50 kHz for silent operation. When used at 24V rails with 50% duty cycle, peak FET dissipation stays below 2W — within the 2.1W TA rating with proper copper heatsinking.
추천
Class-D Audio Amplifier Output Stages
In 50-200W Class-D audio amplifiers, the BSZ017NE2LS5IATMA1 serves as the low-side output FET in the H-bridge stage. The ultra-low 1.7 mΩ RDS(on) minimizes crossover distortion and thermal compression at high output currents, while the small TSDSON-8 footprint allows compact 4-layer amplifier layouts. Designers must ensure the 400 kHz PWM switching frequency is well above the audio band, and that gate-drive dead-time is optimized to prevent shoot-through despite the 30 nC gate charge.
추천
E-Fuse and Inrush Current Limiters
The BSZ017NE2LS5IATMA1 functions as the main pass element in active e-fuse circuits for 12V/20V backplanes and solid-state circuit breakers. Its 1.7 mΩ RDS(on) provides only 17 mV drop at 10A — far less than traditional PTC fuses — and its 25V VDS rating covers standard bus voltages. Combined with a current-sense amplifier like INA180 and a comparator, designers can build resettable e-fuses with sub-100 µs response time, replacing bulky mechanical or polymeric fuses in industrial and server applications.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSZ017NE2LS5IATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSZ036NE2LSATMA1 | BSC018N04LSGATMA1 | BSC014N04LSATMA1 | IPB027N10N3GATMA1 | BSC097N06NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-FL | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 40 V | 40 V | 100 V | 60 V |
| RDS(on) @ VGS=10V (typ) | 1.7 mΩ | 3.6 mΩ | 1.8 mΩ | 1.4 mΩ | 2.7 mΩ | 9.7 mΩ |
| Series / Family | OptiMOS 5 25V | OptiMOS 5 25V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 3 100V | OptiMOS 5 60V |
| Operating Junction Temperature | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +175°C | -55°C to +150°C |
주요 차별점
- Lowest RDS(on) in Infineon 25V OptiMOS 5 family (vs BSZ036NE2LSATMA1)
- Compact TSDSON-8 footprint vs D2PAK alternatives (vs IRFB7534PBF (TO-220) / DPAK-class competitors)
- OptiMOS 5 generation figure-of-merit improvement (vs IPB027N10N3GATMA1 (OptiMOS 3, 100V class))
설계 노트
Estimated: at ID=20A continuous with RDS(on)=1.7 mΩ, conduction loss is I²R = 20² × 0.0017 = 0.68W. With TSDSON-8 θJA ≈ 50°C/W on a 1 oz 1-square-inch copper pour, junction temperature rise above ambient is approximately 34°C — well within the 150°C absolute maximum. For 40A pulsed operation (1 ms duty), peak power is 2.7W and the junction temperature must be calculated against the thermal impedance curve; do not exceed 5W instantaneous dissipation.
The PG-TSDSON-8-FL exposed pad must be soldered to a contiguous copper pour covering at least 50 mm² on top and bottom layers, stitched with thermal vias (0.3 mm pitch, 0.2 mm drill, plated and filled) for optimal heat extraction. Place the gate-drive resistor within 2 mm of pin 1 to suppress parasitic turn-on from drain-gate capacitance (Miller effect). Maintain a minimum 0.2 mm clearance between the drain copper and signal traces.
Do not exceed VGS=±16V absolute maximum — gate-oxide stress accelerates degradation. Always operate VGS between 8V and 12V for optimum RDS(on) without oxide risk. Avoid paralleling multiple BSZ017NE2LS5IATMA1 FETs without individual gate-source resistors (10-100Ω) to prevent high-frequency oscillation. The 2V gate threshold is NOT a logic-level guarantee — confirm full enhancement with VGS≥8V at the lowest expected operating temperature.
규정 준수 정보
RoHS compliant per Infineon product page and JLCPCB listing. Standard grade - not AEC-Q100 qualified; for automotive applications, contact Infineon for Q1-grade variants.
