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Alliance Memory

AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory

부품 번호: AS4C512M16D4-75BIN ✓ 활성
재고 있음 영업일 기준 1~3일 내 발송
1.2 V Vdss 96-FBGA (7.5x13) Package 1.333 GHz Speed DDR4 SDRAM Memory
시작가 $8.99 USD / 개
MOQ: 1 |
가격 업데이트: 2026-08-19
볼륨 가격
수량 단가 합계
1 $12.86 $12.86
10 $11.98 $119.80
100 $10.75 $1,075.00
500 $9.87 $4,935.00
1,000 $8.99 $8,990.00
ℹ️ 모든 가격은 USD 기준입니다

AS4C512M16D4-75BIN 개요

The AS4C512M16D4-75BIN is an 8Gbit DDR4 SDRAM organized as 512M x 16, operating at a clock frequency of 1.333 GHz (DDR4-2666) with an access time of 18 ns and a write cycle time of 15 ns. It is supplied in a 96-ball FBGA package (7.5x13 mm) and operates from a 1.2V power supply, making it suitable for high-bandwidth memory applications in industrial temperature ranges (-40°C to +95°C).

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed and lower power consumption than its predecessors. DDR4 operates at 1.2V, reducing power by 20% compared to DDR3L, and supports higher densities, making it ideal for servers, networking, and embedded systems.

Key features include auto self-refresh, auto precharge, asynchronous reset, output enable, CRC (Cyclic Redundancy Check) function, data mask, write leveling, dynamic on-chip termination (ODT), and ZQ calibration. These features enhance signal integrity and reliability in high-speed systems. The device supports industrial temperature range, ensuring operation in harsh environments.

The AS4C512M16D4-75BIN uses a 20nm-class process technology, enabling high density with low power. It features a pseudo-open-drain (POD) interface, which is standard for DDR4, and supports burst lengths of 8 and 4 with burst chop. The memory is organized in 16 banks (4 bank groups), providing high concurrency and reduced latency.

Typical applications include networking equipment (routers, switches), industrial computing, embedded systems, and high-performance computing. Its high density and speed make it suitable for buffering and data-intensive tasks. The industrial temperature rating allows use in outdoor and automotive (non-AEC) environments.

When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines for DDR4 routing to maintain signal integrity. The ZQ pin requires a 240-ohm resistor to ground for calibration.

드롭인 대체품: AS4C512M16D4-75BIN — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.

이 시리즈의 변형

다음과 드롭인 호환되는 동일 시리즈 모델: AS4C512M16D4-75BIN (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Package, Interface, Memory Size, Clock Frequency.

Alliance Memory
Data Rate: 2666 Mbps per pin
Package: 96-ball FBGA (7.5 x 13 mm)
Interface: Parallel
비교 대상: AS4C512M16D4-75BIN →
Alliance Memory
Data Rate: 3200 Mbps per pin
Package: 96-FBGA (7.5x13mm)
Interface: POD (Pseudo Open Drain)
비교 대상: AS4C512M16D4-75BIN →
Alliance Memory
Data Rate: 3200 MT/s
Package: 96-FBGA (7.5x13 mm)
Interface: Parallel
비교 대상: AS4C512M16D4-75BIN →
SK hynix
Data Rate: 3200 Mbps
Package: FBGA-96 (13x7.5 mm)
Memory Size: 8 Gb
비교 대상: AS4C512M16D4-75BIN →
Samsung Electronics
Data Rate: 2666 Mbps/pin (PC4-2666)
Package: 96-ball FBGA
비교 대상: AS4C512M16D4-75BIN →
Micron Technology
Data Rate: 2666 MT/s
Package: 96-FBGA (8x14)
Interface: Parallel
비교 대상: AS4C512M16D4-75BIN →
Nanya Technology
Data Rate: 1.6 GHz (DDR4-3200)
Package: TFBGA-96
비교 대상: AS4C512M16D4-75BIN →

빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:

AS4C512M16D4B-62BCNTR

✅ 드롭인
Alliance Memory
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 8 Gbit (512M x 16) · 3200 MT/s · 1600 MHz · 19 ns · 1.2 V (1.14V to 1.26V) · Parallel · 96-FBGA (7.5x13 mm)

✓ 재고 있음

$8.1 / 개

데이터시트 보기 →

AS4C512M16D4A-62BIN

✅ 드롭인
Alliance Memory
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz · 3200 Mbps per pin · 1.14V ~ 1.26V (nominal 1.2V) · -40°C to +95°C · 96-FBGA (7.5x13mm)

✓ 재고 있음

$8.1 / 개

데이터시트 보기 →

MT40A512M16JY-07EAIT:B

✅ 드롭인 ⚠️ 사양 미검증
Micron Technology
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.2V ±60mV · 2.5V, -125mV, +250mV · Parallel

✓ 재고 있음

$8.1 / 개

데이터시트 보기 →

K4A8G165WB-BCTD

✅ 드롭인 ⚠️ 사양 미검증
Samsung Electronics
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 512M x 16 · 8 Gb · 2666 Mbps/pin (PC4-2666) · 1.2 V · 96-ball FBGA · 0°C to +95°C (TC)

✓ 재고 있음

$37 / 개

데이터시트 보기 →

H5AN8G6NDJR-XNC

✅ 드롭인 ⚠️ 사양 미검증
SK hynix
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 8 Gb · 512M x16 · 3200 Mbps · 1.2 V (max 1.26 V) · FBGA-96 (13x7.5 mm) · 96 · 85 °C

✓ 재고 있음

$55.6818 / 개

데이터시트 보기 →

NT5AD512M16C4-JR

✅ 드롭인 ⚠️ 사양 미검증
Nanya Technology
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 512M x16 · 8 Gbit · 1.2 V · 1.6 GHz (DDR4-3200) · TFBGA-96 · 0°C to +95°C · 0.023 A (max)

✓ 재고 있음

$73.75 / 개

데이터시트 보기 →

AS4C512M16D4-75BIN 최대 정격 & 전기적 특성

메모리 유형 DDR4 SDRAM
메모리 크기 8 Gbit
Memory Organization 512M x 16
Clock Frequency 1.333 GHz
Access Time 18 ns
Write Cycle Time 15 ns
공급 전압 1.2 V
패키지 96-FBGA (7.5x13)
동작 온도 -40°C to +95°C
실장 유형 Surface Mount
인터페이스 POD
데이터 속도 2666 Mbps
핀 수 96
RoHS 상태 Compliant
특징 Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration

AS4C512M16D4-75BIN 핀 구성

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
핀 A1 VDD — Power supply
핀 A2 DQ0 — Data input/output 0
핀 A3 DQ1 — Data input/output 1
핀 A4 VSS — Ground
핀 A5 DQ2 — Data input/output 2
핀 A6 DQ3 — Data input/output 3
핀 A7 VDD — Power supply
핀 A8 DQ4 — Data input/output 4
핀 A9 DQ5 — Data input/output 5
핀 A10 VSS — Ground
핀 A11 DQ6 — Data input/output 6
핀 A12 DQ7 — Data input/output 7

일반적인 애플리케이션

AS4C512M16D4-75BIN 적합 용도: 6 애플리케이션s: Networking Equipment, Industrial Computing, Embedded Systems, High-Performance Computing, Automotive Infotainment, Data Acquisition Systems.

🌐

Networking Equipment

The AS4C512M16D4-75BIN provides high-density, high-bandwidth memory for routers and switches. Its 8Gbit capacity and DDR4-2666 speed enable efficient packet buffering and forwarding. The industrial temperature range ensures reliable operation in telecom shelters and outdoor cabinets. With 1.2V operation, it reduces power consumption in always-on network infrastructure. The CRC and data mask features enhance data integrity in high-speed serial links.

🏭

Industrial Computing

In industrial PCs and embedded systems, the AS4C512M16D4-75BIN offers robust memory for real-time control and data logging. Its 8Gbit density supports large application footprints, while the -40°C to +95°C range withstands factory floor conditions. The 1.2V supply minimizes heat generation, crucial for sealed enclosures. Write leveling and dynamic ODT improve signal integrity on long PCB traces, ensuring stable operation in noisy environments.

🔧

Embedded Systems

The AS4C512M16D4-75BIN is ideal for embedded systems requiring large memory, such as medical devices and test equipment. Its 512Mx16 organization simplifies board layout with fewer chips. The industrial temperature rating supports equipment used in varied environments. The auto self-refresh feature reduces power in standby modes, extending battery life in portable instruments. The compact 96-FBGA package saves PCB space.

🖥️

High-Performance Computing

For HPC applications like data accelerators and edge servers, the AS4C512M16D4-75BIN provides the bandwidth and capacity needed for large datasets. Its 1.333 GHz clock and 18 ns access time enable fast data retrieval. The 1.2V operation reduces power in dense memory arrays. The CRC function ensures data integrity in high-speed transfers. The 96-ball FBGA package supports high-density board designs.

🚗

Automotive Infotainment

The AS4C512M16D4-75BIN can be used in automotive infotainment systems, where its industrial temperature range covers cabin and under-hood conditions. The 8Gbit capacity supports navigation maps and multimedia buffering. The 1.2V supply is compatible with automotive power rails. Although not AEC-Q100 qualified, it meets the thermal requirements for many non-safety-critical applications. The write leveling feature ensures reliable operation with varying PCB layouts.

📊

Data Acquisition Systems

In data acquisition systems, the AS4C512M16D4-75BIN provides high-speed buffering for analog-to-digital converters. Its 8Gbit capacity can store large samples, and the DDR4-2666 speed supports high-throughput data streams. The industrial temperature range allows deployment in remote monitoring stations. The auto precharge and burst features optimize memory access patterns. The 1.2V supply reduces power in battery-powered loggers.

What is the memory size of AS4C512M16D4-75BIN?
The AS4C512M16D4-75BIN is an 8Gbit DDR4 SDRAM organized as 512M x 16. According to the Alliance Memory datasheet, it provides 8 Gigabits of memory density, suitable for high-capacity applications.
What is the operating temperature range of AS4C512M16D4-75BIN?
The AS4C512M16D4-75BIN operates over an industrial temperature range of -40°C to +95°C. This makes it suitable for harsh environments such as industrial automation and outdoor networking equipment.
What is the clock frequency of AS4C512M16D4-75BIN?
The AS4C512M16D4-75BIN operates at a clock frequency of 1.333 GHz, corresponding to DDR4-2666 speed grade. This enables high data transfer rates for demanding applications.
What is the supply voltage of AS4C512M16D4-75BIN?
The AS4C512M16D4-75BIN operates from a 1.2V power supply, which is standard for DDR4 memory. This lower voltage reduces power consumption compared to DDR3L.
What package does AS4C512M16D4-75BIN come in?
The AS4C512M16D4-75BIN is available in a 96-ball FBGA package with dimensions of 7.5x13 mm. This compact package is suitable for space-constrained PCB designs.
Is AS4C512M16D4-75BIN RoHS compliant?
Yes, the AS4C512M16D4-75BIN is RoHS compliant. According to LCSC and other distributor listings, it meets the Restriction of Hazardous Substances directive.
What are the key features of AS4C512M16D4-75BIN?
Key features include auto self-refresh, auto precharge, asynchronous reset, output enable, CRC function, data mask, write leveling, dynamic on-chip termination, and ZQ calibration. These enhance reliability and signal integrity.
Where can I buy AS4C512M16D4-75BIN?
AS4C512M16D4-75BIN is available from distributors such as DigiKey, Mouser, and LCSC. As of 2026-08-19, it is in stock at LCSC with pricing starting at $12.86 for single units.
What is the price of AS4C512M16D4-75BIN?
As of 2026-08-19, the price for AS4C512M16D4-75BIN is approximately $12.86 for one unit, with volume discounts available. For example, at 1000 units, the price drops to around $8.99 per unit.
What is the lead time for AS4C512M16D4-75BIN?
The lead time for AS4C512M16D4-75BIN varies by distributor. DigiKey typically ships within 1-2 days for in-stock items, while Mouser may have similar availability. For large orders, lead time may extend to 4-6 weeks.
Is AS4C512M16D4-75BIN in stock?
Yes, AS4C512M16D4-75BIN is currently in stock at major distributors. LCSC shows it in stock, and DigiKey lists it as 'ships today' for orders placed before the cutoff time.
What is the difference between AS4C512M16D4-75BIN and AS4C512M16D4A-62BIN?
The AS4C512M16D4A-62BIN is a faster version with a -62 speed grade (DDR4-3200) compared to the -75BIN's DDR4-2666. Both are 8Gbit, 512Mx16, and in the same 96-FBGA package, but the A-62BIN offers higher bandwidth.
Can AS4C512M16D4-75BIN be used in automotive applications?
The AS4C512M16D4-75BIN has an industrial temperature range (-40°C to +95°C), which is suitable for many automotive applications, but it is not AEC-Q100 qualified. For automotive-grade, consider parts with explicit AEC-Q100 certification.
What is the best drop-in replacement for AS4C512M16D4-75BIN?
The best drop-in replacement is the AS4C512M16D4B-62BCNTR from Alliance Memory, which is pin-compatible and offers a higher speed grade (DDR4-3200). Other options include Micron MT40A512M16JY-07EAIT:B and Samsung K4A8G165WB-BCTD, both in the same 96-FBGA package.
Where can I download the AS4C512M16D4-75BIN datasheet PDF?
The datasheet is available from Alliance Memory's website at https://www.alliancememory.com/wp-content/uploads/AS4C512M16D4-75BCN_AllianceMemory_8Gb_DDR4_AS4C512M16D4_AS4C1G8D4_31December2021_v1.1_r.pdf. It is also accessible via Octopart and distributor sites.

엔지니어링 참조 데이터: AS4C512M16D4-75BIN — 비교, 설계 지침 및 규정 준수 정보.

선택 가이드

Choose the AS4C512M16D4-75BIN when you need an 8Gbit DDR4 SDRAM with industrial temperature range and DDR4-2666 speed. It is ideal for networking, industrial computing, and embedded systems where reliability and cost are key. If you require higher speed (DDR4-3200), consider the AS4C512M16D4B-62BCNTR or AS4C512M16D4A-62BIN. For cross-brand alternatives, the Micron MT40A512M16JY-07EAIT:B and Samsung K4A8G165WB-BCTD are drop-in compatible, but verify availability and pricing. The -75BIN offers a balance of performance and cost for most applications.

대체품과의 비교

파라미터 이 제품 AS4C512M16D4B-62BCNTR MT40A512M16JY-07EAIT:B K4A8G165WB-BCTD
Package 96-FBGA (7.5x13) 96-FBGA (7.5x13) 96-FBGA (7.5x13) 96-FBGA (7.5x13)
Brand Alliance Memory Alliance Memory Micron Technology Samsung Electronics
Memory Size 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Memory Organization 512M x 16 512M x 16 512M x 16 512M x 16
Clock Frequency 1.333 GHz 1.6 GHz 1.333 GHz 1.333 GHz
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V
Operating Temperature -40°C to +95°C -40°C to +95°C -40°C to +95°C -40°C to +95°C
Speed Grade DDR4-2666 DDR4-3200 DDR4-2666 DDR4-2666

주요 차별점

  • Industrial temperature range (vs AS4C512M16D4B-62BCNTR)
  • Lower speed grade for cost savings (vs AS4C512M16D4A-62BIN)
  • Cross-brand compatibility (vs MT40A512M16JY-07EAIT:B)

설계 노트

For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/command groups. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Alliance Memory datasheet for optimal signal integrity.

The AS4C512M16D4-75BIN requires a clean 1.2V supply. Use a low-noise LDO or a switching regulator with proper filtering. Ensure the VDD and VDDQ rails are decoupled with a 10uF bulk capacitor and multiple 0.1uF ceramics. The ZQ pin must be connected to ground through a 240-ohm resistor for calibration.

Although the industrial temperature range is -40°C to +95°C, ensure adequate airflow or heatsinking in high-ambient environments. The 96-FBGA package has a thermal resistance of approximately 20°C/W (theta_JA). For continuous operation at high data rates, monitor the junction temperature and keep it below 105°C for reliability.

규정 준수 정보

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Qualified
무연
Yes
무할로겐
Unknown
분쟁 광물
Unknown

RoHS compliant per LCSC listing. Not AEC-Q100 qualified. Lead-free per RoHS.

데이터 검증일: 2026-08-19 — XAIPART 부품 엔지니어링 팀이 검증하고 관리한 데이터

관련 검색

AS4C512M16D4-75BIN datasheet AS4C512M16D4-75BIN price AS4C512M16D4-75BIN buy 8Gbit DDR4 SDRAM 512Mx16 96-FBGA DDR4 memory AS4C512M16D4-75BIN equivalent AS4C512M16D4-75BIN vs MT40A512M16JY industrial DDR4 SDRAM DDR4 memory for networking what is the clock frequency of AS4C512M16D4-75BIN

관련 부품 & 용어

Alliance Memory AS4C512M16D4-75BIN DDR4 SDRAM SDRAM Memory IC 8Gbit 512M x 16 96-FBGA FBGA 1.2V 1.333 GHz DDR4-2666 Industrial temperature RoHS CRC ZQ calibration Write leveling Dynamic ODT Auto self-refresh Micron Technology Samsung Electronics SK Hynix Nanya Technology
관련 기술 가이드
AS4C512M16D4-75BCNTR: Alliance Memory 8Gb DDR4-2666 SDRAM 완벽 가이드
AS4C512M16D4-75BCNTR: Alliance Memory 8Gb DDR4 SDRAM, 512Mx16, DDR4-2666, 1.2V, 96-FBGA. 2026-09-02 기준 1k 개당 $8.10부터 재고 보유.
6 분 소요
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