AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory
N.º de pieza: AS4C512M16D4-75BIN ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $12.86 | $12,86 |
| 10 | $11.98 | $119,80 |
| 100 | $10.75 | $1.075,00 |
| 500 | $9.87 | $4.935,00 |
| 1.000 | $8.99 | $8.990,00 |
AS4C512M16D4-75BIN Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed and lower power consumption than its predecessors. DDR4 operates at 1.2V, reducing power by 20% compared to DDR3L, and supports higher densities, making it ideal for servers, networking, and embedded systems.
Key features include auto self-refresh, auto precharge, asynchronous reset, output enable, CRC (Cyclic Redundancy Check) function, data mask, write leveling, dynamic on-chip termination (ODT), and ZQ calibration. These features enhance signal integrity and reliability in high-speed systems. The device supports industrial temperature range, ensuring operation in harsh environments.
The AS4C512M16D4-75BIN uses a 20nm-class process technology, enabling high density with low power. It features a pseudo-open-drain (POD) interface, which is standard for DDR4, and supports burst lengths of 8 and 4 with burst chop. The memory is organized in 16 banks (4 bank groups), providing high concurrency and reduced latency.
Typical applications include networking equipment (routers, switches), industrial computing, embedded systems, and high-performance computing. Its high density and speed make it suitable for buffering and data-intensive tasks. The industrial temperature rating allows use in outdoor and automotive (non-AEC) environments.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines for DDR4 routing to maintain signal integrity. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Alternativas directas para AS4C512M16D4-75BIN — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con AS4C512M16D4-75BIN (mismo factor de forma y huella) — difiere en Data Rate, Package, Interface, Memory Size, Clock Frequency.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
AS4C512M16D4B-62BCNTR
✅ Sustitución directa✓ En stock
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Ver hoja de datos →AS4C512M16D4A-62BIN
✅ Sustitución directa✓ En stock
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Ver hoja de datos →MT40A512M16JY-07EAIT:B
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
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Ver hoja de datos →K4A8G165WB-BCTD
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Ver hoja de datos →H5AN8G6NDJR-XNC
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
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Ver hoja de datos →NT5AD512M16C4-JR
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$73.75 / unidad
Ver hoja de datos →AS4C512M16D4-75BIN Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Tamaño de memoria | 8 Gbit |
| Memory Organization | 512M x 16 |
| Clock Frequency | 1.333 GHz |
| Access Time | 18 ns |
| Write Cycle Time | 15 ns |
| Tensión de alimentación | 1.2 V |
| Encapsulado | 96-FBGA (7.5x13) |
| Temperatura de funcionamiento | -40°C to +95°C |
| Tipo de montaje | Surface Mount |
| Interfaz | POD |
| Velocidad de datos | 2666 Mbps |
| Número de pines | 96 |
| Estado RoHS | Compliant |
| Características | Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration |
Configuración de pines de AS4C512M16D4-75BIN
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
Aplicaciones típicas
AS4C512M16D4-75BIN es adecuado para 6 aplicacións: Networking Equipment, Industrial Computing, Embedded Systems, High-Performance Computing, Automotive Infotainment, Data Acquisition Systems.
Networking Equipment
The AS4C512M16D4-75BIN provides high-density, high-bandwidth memory for routers and switches. Its 8Gbit capacity and DDR4-2666 speed enable efficient packet buffering and forwarding. The industrial temperature range ensures reliable operation in telecom shelters and outdoor cabinets. With 1.2V operation, it reduces power consumption in always-on network infrastructure. The CRC and data mask features enhance data integrity in high-speed serial links.
Recomendado
Industrial Computing
In industrial PCs and embedded systems, the AS4C512M16D4-75BIN offers robust memory for real-time control and data logging. Its 8Gbit density supports large application footprints, while the -40°C to +95°C range withstands factory floor conditions. The 1.2V supply minimizes heat generation, crucial for sealed enclosures. Write leveling and dynamic ODT improve signal integrity on long PCB traces, ensuring stable operation in noisy environments.
Recomendado
Embedded Systems
The AS4C512M16D4-75BIN is ideal for embedded systems requiring large memory, such as medical devices and test equipment. Its 512Mx16 organization simplifies board layout with fewer chips. The industrial temperature rating supports equipment used in varied environments. The auto self-refresh feature reduces power in standby modes, extending battery life in portable instruments. The compact 96-FBGA package saves PCB space.
Recomendado
High-Performance Computing
For HPC applications like data accelerators and edge servers, the AS4C512M16D4-75BIN provides the bandwidth and capacity needed for large datasets. Its 1.333 GHz clock and 18 ns access time enable fast data retrieval. The 1.2V operation reduces power in dense memory arrays. The CRC function ensures data integrity in high-speed transfers. The 96-ball FBGA package supports high-density board designs.
Recomendado
Automotive Infotainment
The AS4C512M16D4-75BIN can be used in automotive infotainment systems, where its industrial temperature range covers cabin and under-hood conditions. The 8Gbit capacity supports navigation maps and multimedia buffering. The 1.2V supply is compatible with automotive power rails. Although not AEC-Q100 qualified, it meets the thermal requirements for many non-safety-critical applications. The write leveling feature ensures reliable operation with varying PCB layouts.
Recomendado
Data Acquisition Systems
In data acquisition systems, the AS4C512M16D4-75BIN provides high-speed buffering for analog-to-digital converters. Its 8Gbit capacity can store large samples, and the DDR4-2666 speed supports high-throughput data streams. The industrial temperature range allows deployment in remote monitoring stations. The auto precharge and burst features optimize memory access patterns. The 1.2V supply reduces power in battery-powered loggers.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para AS4C512M16D4-75BIN — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | AS4C512M16D4B-62BCNTR | MT40A512M16JY-07EAIT:B | K4A8G165WB-BCTD |
|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Alliance Memory | Alliance Memory | Micron Technology | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Memory Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.333 GHz | 1.6 GHz | 1.333 GHz | 1.333 GHz |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C |
| Speed Grade | DDR4-2666 | DDR4-3200 | DDR4-2666 | DDR4-2666 |
Diferenciadores clave
- Industrial temperature range (frente a AS4C512M16D4B-62BCNTR)
- Lower speed grade for cost savings (frente a AS4C512M16D4A-62BIN)
- Cross-brand compatibility (frente a MT40A512M16JY-07EAIT:B)
Notas de diseño
For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for data and address/command groups. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Alliance Memory datasheet for optimal signal integrity.
The AS4C512M16D4-75BIN requires a clean 1.2V supply. Use a low-noise LDO or a switching regulator with proper filtering. Ensure the VDD and VDDQ rails are decoupled with a 10uF bulk capacitor and multiple 0.1uF ceramics. The ZQ pin must be connected to ground through a 240-ohm resistor for calibration.
Although the industrial temperature range is -40°C to +95°C, ensure adequate airflow or heatsinking in high-ambient environments. The 96-FBGA package has a thermal resistance of approximately 20°C/W (theta_JA). For continuous operation at high data rates, monitor the junction temperature and keep it below 105°C for reliability.
Información de cumplimiento
RoHS compliant per LCSC listing. Not AEC-Q100 qualified. Lead-free per RoHS.
