H5AN4G8NBJR-UHI - 4Gb DDR4-2400 SDRAM | SK hynix
부품 번호: H5AN4G8NBJR-UHI ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.95 | $29.50 |
| 100 | $2.7 | $270.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.25 | $2,250.00 |
H5AN4G8NBJR-UHI 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family and a cornerstone of modern power management ICs and memory subsystems. Compared with DDR3, DDR4 lowers the operating voltage from 1.5 V to 1.2 V, doubles bank groups to enable higher bandwidth, and adds features such as bank group architecture, DBI (data bus inversion), and CA parity, making it the mainstream main-memory technology for embedded and industrial platforms between DDR3 and DDR5.
Key features of the H5AN4G8NBJR-UHI include its large 4Gb density in a single x8 die, DDR4-2400 data-rate operation (PC4-19200), and the 1.2 V low-voltage core that reduces system power versus DDR3 solutions. The x8 organization simplifies controller design and supports single-bit-error correction schemes such as chipkill-style ECC at board level. According to the SK hynix H5AN4GxNBJR series datasheet, the family is ideally suited for main-memory applications requiring large density and high bandwidth.
Technically, the device implements the JEDEC DDR4 SDRAM interface with bank-group parallelism, on-die termination (ODT), and programmable CAS latency, supporting burst lengths of 8 and sequential/interleave access modes. Power-down and self-refresh modes reduce standby consumption, which is valuable in industrial systems with constrained thermal budgets.
Typical applications include industrial-control main memory, networking equipment line-card buffering, embedded compute modules (COM Express, SMARC), and test-and-measurement systems that require DDR4-2400 bandwidth at industrial temperature ranges. The -UHI industrial grade differentiates it from consumer -UHC parts rated for narrower ambient conditions.
Design consideration: DDR4-2400 routing requires careful length matching of data groups, controlled-impedance stackups, and accurate VTT termination; follow the SK hynix system design guide and controller layout rules for fly-by command/address topology.
This page synthesizes distributor sourcing data, same-footprint drop-in alternatives from SK hynix, Micron, and Samsung, and practical DDR4 design notes not found in the manufacturer datasheet alone.
드롭인 대체품: H5AN4G8NBJR-UHI — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5AN4G8NBJR-UHI (동일 폼 팩터 및 풋프린트) — 차이점: Package, Data Rate, Interface, RoHS Status, Refresh.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5AN4G8NBJR-UHC
✅ 드롭인✓ 재고 있음
$3.18 / 개
데이터시트 보기 →H5AN4G8NBJR-RDC
✅ 드롭인✓ 재고 있음
$2.95 / 개
데이터시트 보기 →H5AN4G8NBJR-PBC
✅ 드롭인✓ 재고 있음
$2.2 / 개
데이터시트 보기 →MT40A512M8RH-083E
✅ 드롭인✓ 재고 있음
$3.3 / 개
데이터시트 보기 →K4A8G085WC-BCWE
✅ 드롭인✓ 재고 있음
$7.3828 / 개
데이터시트 보기 →K4A8G085WB-BCWE
✅ 드롭인✓ 재고 있음
$12.3047 / 개
데이터시트 보기 →H5AN4G8NBJR-UHI 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Density | 4 Gbit |
| 메모리 구성 | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) |
| Supply Voltage (VDD) | 1.2 V |
| 패키지 | FBGA-78 (78-ball fine-pitch BGA) |
| 실장 유형 | Surface Mount |
| Grade | Industrial (-UHI suffix) |
| 데이터 속도 | 2400 MT/s |
| 인터페이스 | JEDEC DDR4 SDRAM |
| Bank Architecture | DDR4 bank group architecture |
| Refresh | Self-refresh and auto-refresh support |
| Termination | On-die termination (ODT) |
H5AN4G8NBJR-UHI fbga-78 (78-ball fine-pitch bga) 핀 구성 가이드
H5AN4G8NBJR-UHI(fbga-78 (78-ball fine-pitch bga) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: H5AN4G8NBJR-UHI.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5AN4G8NBJR-UHI 적합 용도: 6 애플리케이션s: Industrial Control Main Memory, Networking Equipment Buffer Memory, Embedded Compute Modules (COM Express / SMARC), Test and Measurement Instrumentation, Surveillance and Vision Systems, Automotive-Adjacent and Rugged Embedded Systems.
Industrial Control Main Memory
The H5AN4G8NBJR-UHI is purpose-built for industrial-control main memory because the -UHI industrial temperature grade withstands the wide ambient conditions found in factory automation cabinets, motor-control enclosures, and PLC platforms. Its 4Gb 512M x 8 organization provides ample buffer space for real-time control data at DDR4-2400 bandwidth (PC4-19200 class), while the 1.2 V rail keeps memory-subsystem power low enough for passively cooled industrial systems. Deployed as discrete DRAM on a CPU or SoC board with fly-by address routing and on-die termination, it delivers deterministic bandwidth for motion profiles and logging workloads. Self-refresh mode preserves state through low-power standby, and the FBGA-78 footprint enables second-sourcing with Micron or Samsung equivalents without PCB rework.
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Networking Equipment Buffer Memory
Line cards, switches, and routers rely on large, fast DRAM pools for packet buffering, queue management, and table lookups, and the H5AN4G8NBJR-UHI fits this role with DDR4-2400 data-rate operation and a 4Gb density in a single x8 die. The x8 organization allows granular ECC strategies at the controller level, important for long-duty-cycle networking hardware where uncorrected bit errors degrade uptime. The 1.2 V supply and DDR4 power-down modes reduce per-port power, a critical metric in high-port-count equipment. Because the FBGA-78 package is the industry-standard DDR4 footprint, network OEMs can dual-source with SK hynix suffix variants or Micron MT40A512M8RH-083E to mitigate allocation risk, an increasingly common practice in telecom supply chains.
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Embedded Compute Modules (COM Express / SMARC)
Computer-on-module carriers for COM Express and SMARC standards frequently specify discrete DDR4 components soldered directly on the module, and the H5AN4G8NBJR-UHI provides 4Gb of DDR4-2400 bandwidth per chip with the industrial reliability the -UHI grade implies. Four x8 devices aggregate into a 64-bit bus with 8 GB of memory, matching typical embedded CPU memory controllers, while 1.2 V operation keeps module thermal design feasible in fanless enclosures. The FBGA-78 land pattern is shared across SK hynix, Micron, and Samsung x8 DDR4 parts, letting module vendors qualify multiple sources on one PCB. Self-refresh supports memory retention across S3/suspend states, and DDR4 ODT simplifies signal integrity on high-layer-count module stackups.
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Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with sustained bandwidth, and the H5AN4G8NBJR-UHI supplies 4Gb per device at DDR4-2400, enabling multi-gigabyte acquisition buffers in benchtop instruments. The x8 organization supports straightforward 72-bit ECC memory controllers (64 data plus 8 check devices), preserving measurement integrity during long captures. The industrial -UHI grade tolerates instrument-internal temperature rise above ambient, which is common in densely packed acquisition hardware. Its 1.2 V supply eases power-supply design in instruments already constrained by analog rail noise concerns, and the standard FBGA-78 footprint allows vendors to swap in Samsung K4A8G085WC-BCWE or Micron equivalents during component shortages without redesign.
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Surveillance and Vision Systems
Network video recorders and smart-camera platforms stream multiple high-resolution video channels through DRAM before write-out to storage, making 4Gb DDR4 components like the H5AN4G8NBJR-UHI a natural fit. The DDR4-2400 data rate sustains the multi-stream aggregate bandwidth of 4K camera pipelines, while 512M x 8 organization supports ECC-protected buffering that prevents visual artifacts from sporadic bit errors in always-on recording systems. The industrial -UHI grade suits outdoor NVR enclosures subject to wide temperature swings, and the 1.2 V rail helps keep passively cooled surveillance hardware within its thermal budget. Using the standard FBGA-78 footprint, security OEMs can alternate between SK hynix, Micron MT40A512M8RH-083E, and Samsung parts to stabilize supply across project volumes.
추천
Automotive-Adjacent and Rugged Embedded Systems
Rugged embedded controllers used in telematics gateways, off-highway equipment, and transport infrastructure require memory that survives vibration, thermal cycling, and wide ambient ranges; the FBGA-78 solder-ball mounting of the H5AN4G8NBJR-UHI plus its industrial -UHI grade address these mechanical and thermal demands. The 4Gb density supports map caching, protocol stacks, and data logging at DDR4-2400 bandwidth, while bank-group architecture keeps effective throughput high under the mixed read/write patterns typical of gateway workloads. At 1.2 V, the DRAM contributes minimally to the power budget of battery-backed and ignition-switched systems. The shared DDR4 footprint enables dual-sourcing with Micron and Samsung x8 parts, protecting long-lifecycle rugged programs from single-vendor allocation.
추천
추천 제품 요약
엔지니어링 참조 데이터: H5AN4G8NBJR-UHI — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5AN4G8NBJR-UHC | H5AN4G8NBJR-RDC | MT40A512M8RH-083E | K4A8G085WC-BCWE |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Sourcing Model | RFQ / distributor quote | RFQ / broker stock | RFQ | Franchise distributor | Franchise distributor |
주요 차별점
- Industrial temperature grade (vs H5AN4G8NBJR-UHC)
- Standard footprint with broad cross-brand second sourcing (vs MT40A512M8RH-083E)
- Speed-bin flexibility within the same die (vs H5AN4G8NBJR-PBC)
설계 노트
DDR4-2400 routing requires length matching within the controller specification, typically tight matching of DQ/DM/DQS per byte lane and looser but bounded skew on address/command for the fly-by topology. Use on-die termination (ODT) settings from the SK hynix datasheet and write-leveling to close timing at 2400 MT/s. Keep data groups on inner layers with solid reference planes, and avoid splitting the DQ reference plane under escape routing. Validate with eye-diagram tests on the DQS strobe before production sign-off.
Provide three rails: 1.2 V VDD, approximately 2.5 V VPP, and VTT at VDD/2 with a termination regulator capable of sinking and sourcing current. Estimated: a single x8 DDR4 device draws on the order of hundreds of milliwatts at DDR4-2400, so a 4-device 32-bit bus plus VTT needs a multi-amp rail design; size the VTT LDO or switcher with a bulk capacitance of at least 100 uF plus local 0.1 uF ceramics per ball-cluster. Follow the controller vendor power tree, e.g., TI or Renesas DDR power reference designs.
Do not assume speed-grade interchange without controller validation: swapping the -UHI (DDR4-2400) for a slower -PBC suffix can fail boot at programmed CAS latency, while faster bins like Micron MT40A512M8RH-083E (DDR4-2666) generally down-clock safely but must still pass memory training. Also, -UHC commercial-grade parts must not replace -UHI in industrial thermal environments even though they are die-identical. Always re-run memory training and margining after any suffix or brand substitution.
FBGA-78 escape routing uses via-in-pad or dog-bone fan-out; prefer 0.8 mm pitch-compatible via-in-pad with filled vias for signal integrity at 2400 MT/s. Reserve the layer stack for a minimum of one dedicated ground reference under each data group. Add thermal relief consistent with JEDEC-style solder-ball reflow profiles for BGA packages, and define the footprint land pattern per the manufacturer package drawing rather than copying from another vendor to avoid ball-map mismatch on second sources.
규정 준수 정보
Compliance status not stated in sourced web data. Obtain the official SK hynix environmental report for the H5AN4G8NBJR family for RoHS/REACH/halogen-free confirmation.
