H5AN4G8NBJR-PBC - 4Gb DDR4 SDRAM 512Mx8 FBGA-78 | SK hynix
부품 번호: H5AN4G8NBJR-PBC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.95 | $29.50 |
| 100 | $2.7 | $270.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.2 | $2,200.00 |
H5AN4G8NBJR-PBC 개요
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in computing. As a DRAM category member, it sits in the memory hierarchy below CPU cache and above storage, providing volatile, high-bandwidth working memory. Compared with DDR3, DDR4 doubles bank groups to 4, lowers the core voltage from 1.5V to 1.2V, and raises per-pin data rates well beyond 2133 Mbps, making it the standard memory IC for embedded controllers, industrial PCs, networking equipment, and consumer platforms.
Key features of the H5AN4G8NBJR family include 4Gb density in an x8 organization, JEDEC-standard DDR4 interface operation, and availability in both consumer (BJR) and embedded temperature variants. The datasheet defines a normal operating case-temperature range of 0C to 85C, with extended operation permitted up to 95C case temperature where refresh rate is increased, and the industrial variant supports -40C to 85C. The device is offered lead-free and halogen-free per the manufacturer datasheet.
Technically, the device uses an 8n-bit prefetch architecture with bank groups, enabling high effective bandwidth at moderate core frequencies. termination (ODT), DLL, and programmable CAS latency support signal integrity at DDR4 data rates. The PBC speed grade suffix denotes the manufacturer speed bin; system designers must validate tCK, CL, and tRCD/tRP/tRC timings for their memory controller configuration.
Typical applications include embedded main memory for industrial controllers, networking and communication equipment line cards, set-top boxes, gaming consoles, and consumer electronics requiring large memory density and high bandwidth.
A key design consideration is routing: DDR4 fly-by topology with on-die termination, matched-length address/command traces, and careful VREF decoupling are required to meet eye-mask compliance at the rated data rate.
This page synthesizes distributor and datasheet data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: H5AN4G8NBJR-PBC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5AN4G8NBJR-PBC (동일 폼 팩터 및 풋프린트) — 차이점: Package, Data Rate, Interface, RoHS Status, Refresh.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5AN4G8NBJR-VKC
✅ 드롭인✓ 재고 있음
$2.4 / 개
데이터시트 보기 →H5AN4G8NBJR-UHC
✅ 드롭인✓ 재고 있음
$3.18 / 개
데이터시트 보기 →H5AN4G8NBJR-XXI
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
H5AN4G8NAFR-PBC
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4A4G085WD-BCTD
✅ 드롭인✓ 재고 있음
$2.05 / 개
데이터시트 보기 →MT40A512M8RH-083E
✅ 드롭인✓ 재고 있음
$3.3 / 개
데이터시트 보기 →H5AN4G8NBJR-PBC 최대 정격 & 전기적 특성
| Memory Density | 4 Gbit |
| 메모리 구성 | 512M x 8 |
| 메모리 유형 | DDR4 SDRAM |
| 인터페이스 유형 | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | 1.2 V |
| Supply Voltage VDDQ | 1.2 V |
| Speed Grade | PBC |
| 패키지 | 78-ball FBGA |
| 실장 유형 | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C |
| Extended Temperature Range | up to 95C case (with increased refresh) |
| Lead Free | Yes |
| 할로겐 프리 | Yes |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC |
H5AN4G8NBJR-PBC 0c to 85c 핀 구성 가이드
H5AN4G8NBJR-PBC(0c to 85c 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: H5AN4G8NBJR-PBC.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5AN4G8NBJR-PBC 적합 용도: 6 애플리케이션s: Embedded Industrial Controller Main Memory, Networking and Communication Line Cards, Consumer Electronics and Set-Top Boxes, Test and Measurement Instrumentation, Automotive-Adjacent Infotainment and Displays, Server and Data Center Memory Subsystems.
Embedded Industrial Controller Main Memory
The H5AN4G8NBJR-PBC provides 4Gb of DDR4 main memory for industrial controllers, PLCs, and edge compute modules that require both density and bandwidth. Its 512M x 8 organization pairs naturally with memory controllers that route a single x8 component per rank, simplifying PCB fanout on 4- and 6-layer boards. The 1.2V VDD/VDDQ rails keep power dissipation low enough for fanless enclosures, and the 0C to 85C normal case-temperature range covers most factory-floor conditions, with the XXC industrial variant covering -40C cold starts. DDR4's bank-group architecture sustains high random-access throughput for real-time data logging and protocol processing.
추천
Networking and Communication Line Cards
Switch, router, and gateway line cards use DDR4 as packet buffer and lookup table memory, where the H5AN4G8NBJR-PBC's 4Gb density and x8 organization deliver cost-effective buffering at high bandwidth. DDR4's on-die termination and fly-by address routing reduce the number of discrete termination components per rank, cutting BOM cost across multi-rank designs. The PBC speed grade supports data rates adequate for 10G-class forwarding pipelines, and the 78-ball FBGA footprint enables dense placement beside the packet processor. Thermal design should keep case temperature below 85C with forced airflow in high-utilization switches.
추천
Consumer Electronics and Set-Top Boxes
Set-top boxes, smart TVs, and gaming peripherals use 4Gb DDR4 components like the H5AN4G8NBJR-PBC as system memory for video decode buffers and application execution. The 512M x 8 organization allows SoCs with x8 or x16 memory controllers to be populated with one or two components, and DDR4's 1.2V operation meets consumer standby power budgets. The consumer BJR datasheet revision targets this market segment explicitly, and the lead-free, halogen-free construction supports global environmental compliance. Cost per gigabit at this density makes it a common choice across high-volume consumer platforms.
추천
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with sustained write bandwidth, which the H5AN4G8NBJR-PBC supplies through its DDR4 bank-group architecture. The x8 organization's DM and DQS signaling simplifies calibration on instrument-grade PCBs, and 4Gb per component lets designers reach hundreds of megabytes of capture depth with a handful of parts. The normal 0C to 85C case range suits benchtop instruments, while extended operation to 95C with increased refresh accommodates confined chassis. Deterministic refresh scheduling in the controller preserves uniform capture latency.
추천
Automotive-Adjacent Infotainment and Displays
Non-safety infotainment, digital clusters in aftermarket systems, and industrial displays built on automotive-grade SoCs frequently require DDR4 UDIMM-class or discrete components; the H5AN4G8NBJR-PBC serves cost-sensitive variants, while the AEC-Q-qualified lines serve safety paths. Its 4Gb density supports dual-display frame buffers and navigation map storage in RAM, and the 1.2V rail eeps the memory subsystem within typical automotive PMIC outputs. Designers should select the XXC industrial variant for wide ambient conditions and validate the PBC speed bin against the SoC's supported JEDEC timing table.
추천
Server and Data Center Memory Subsystems
Entry-level servers, storage controllers, and microserver boards use discrete DDR4 components such as the H5AN4G8NBJR-PBC on RDIMM-like custom modules or soldered-down memory. The x8 organization with full ECC byte lane support makes single-component replacement of a x8 lane straightforward, and DDR4's bank groups improve effective bandwidth for streaming storage workloads. 4Gb density balances cost per bit against chip-select budget on modest controllers, and standardized 78-ball footprints allow qualification of second sources like Samsung K4A4G085WD and Micron MT40A512M8 for supply resilience.
추천
추천 제품 요약
엔지니어링 참조 데이터: H5AN4G8NBJR-PBC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5AN4G8NBJR-VKC | H5AN4G8NBJR-XXI | H5AN4G8NAFR-PBC | K4A4G085WD-BCTD | MT40A512M8RH-083E |
|---|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - verify ball-map | 78-ball FBGA - same JEDEC | 78-ball FBGA - same JEDEC |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Samsung | Micron |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to 85C (ext. 95C) | 0C to 85C (ext. 95C) | -40C to 85C | 0C to 85C (ext. 95C) | 0C to 85C | 0C to 85C |
| Environmental | Lead-free, halogen-free | Lead-free, halogen-free | Lead-free, halogen-free | Lead-free, halogen-free | Lead-free, RoHS | Lead-free, RoHS |
주요 차별점
- Industrial temperature variant availability in same package (vs H5AN4G8NBJR-XXI)
- Faster speed bin option on the same die (vs H5AN4G8NBJR-VKC)
- Multi-vendor footprint standardization (vs K4A4G085WD-BCTD)
설계 노트
Route DDR4 address/command lines in fly-by topology with series termination toward the last component, and match DQ/DQS/DM within +-25 mils per byte lane. Keep VREF decoupling within 2 mm of the VREF ball with a 0.1uF capacitor plus 1uF bulk. The 78-ball FBGA allows via-in-pad fanout on 4-layer boards; use 0.3 mm microvias where stack-up permits. Follow the SK hynix DDR4 design guide and JEDEC DDR4 ball-map conventions to retain second-source compatibility with Samsung and Micron 4Gb x8 parts.
The datasheet requires the DRAM case temperature to stay between 0C and 85C under all operating conditions; operation between 85C and 95C is allowed only with increased refresh rate, which reduces effective bandwidth. Estimated: at 1.2V with typical DDR4 active current in the several-hundred-mA range, power dissipation per component is on the order of 0.5-1W; ensure copper pour under the FBGA or airflow to keep case temperature in the normal range, and place the hottest memory component farthest from heat sources.
Do not mix speed bins (PBC, VKC, UHC) in the same memory channel unless the controller independently trains each rank. Verify the PBC speed-bin timing table (tCK, CL, tRCD, tRP, tRC) directly from the manufacturer datasheet rather than assuming values from other suffixes. When substituting the AFR die version, compare ball-map tables first, as AFR and BJR die versions may differ. Power rails must sequence VDD before or with VDDQ per the DDR4 specification to avoid latch-up.
규정 준수 정보
Manufacturer datasheet states lead-free and halogen-free construction. Formal RoHS/REACH declarations must be obtained from SK hynix product documentation.