IPN80R1K2P7ATMA1 - 800V CoolMOS P7 1.2Ω N-MOSFET | Infineon
부품 번호: IPN80R1K2P7ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.02 | $10.20 |
| 100 | $0.86 | $86.00 |
| 500 | $0.71 | $355.00 |
| 1,000 | $0.62 | $620.00 |
| 3,000 | $0.51 | $1,530.00 |
IPN80R1K2P7ATMA1 개요
A superjunction MOSFET (SJ-MOSFET) is a power MOSFET architecture that achieves a much higher figure-of-merit (low RDS(on) × Qg) than conventional planar or trench MOSFETs by stacking alternating P- and N-doped drift regions. This places the IPN80R1K2P7ATMA1 inside the hierarchy: power MOSFET → high-voltage MOSFET → superjunction MOSFET → CoolMOS P7 family → discrete semiconductors. CoolMOS P7 is Infineon's mainstream 500 V–950 V superjunction generation optimized for ease-of-use, low gate charge, and rugged body-diode reverse-recovery performance.
Key specifications include an 800 V VDSS rating that exceeds typical 700 V industrial bus voltages and provides generous margin for rectified 230 VAC mains, an integrated ESD-protected gate, a low RDS(on) of 1200 mΩ max at VGS = 10 V, and a thermally efficient SOT-223 package with the tab acting as the drain connection. The P7 family is engineered for low switching losses and high body-diode ruggedness, which simplifies or eliminates snubber circuitry in hard-switching topologies.
Typical applications include auxiliary and standby power supplies for white goods and industrial equipment, LED lighting drivers, smart metering, e-bike chargers, and low-power adapters. The 800 V rating and integrated ESD gate make the device especially well suited to cost-sensitive flyback converters operating directly from rectified mains.
When designing with this part, observe the SOT-223 PCB layout: pins 1 (gate), 2 (drain tab + tab pin), and 3 (source) must all be soldered, with the drain tab providing both electrical contact and the primary thermal path. Keep the gate drive below the 20 V VGS absolute maximum and provide adequate copper area on the drain tab to stay within SOA at full 4.5 A load.
드롭인 대체품: IPN80R1K2P7ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPN80R1K2P7ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Continuous Drain Current (ID, Tc).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPD80R600P7ATMA1
✅ 드롭인✓ 재고 있음
$0.92 / 개
데이터시트 보기 →IPD80R450P7ATMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPD80R1K2P7ATMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPN80R900P7ATMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPN80R2K0P7ATMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPL60R105P7AUMA1
✅ 드롭인✓ 재고 있음
$0.82 / 개
데이터시트 보기 →IPB60R037P7XKSA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPN80R1K2P7ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Family / Series | CoolMOS P7 |
| 트랜지스터 유형 | N-Channel MOSFET |
| Drain-Source Voltage VDSS | 800 V |
| Continuous Drain Current ID (Tc) | 4.5 A |
| Maximum RDS(on) | 1200 mΩ at VGS = 10 V |
| Power Dissipation PD (Tc) | 6.8 W |
| Technology | Superjunction (CoolMOS) |
| 패키지 | SOT-223 (3-pin, 2 + tab) |
| 실장 유형 | Surface Mount |
| 동작 온도 범위 | -55°C to +150°C (TJ) |
| ESD Protection | ESD-protected gate (per CoolMOS P7 family) |
| RoHS Compliance | Compliant |
IPN80R1K2P7ATMA1 핀 구성
| 핀 1 | Gate — MOSFET gate input (ESD protected) |
| 핀 2 | Drain — MOSFET drain, internally connected to the metal tab |
| 핀 3 | Source — MOSFET source |
| 핀 Tab | Drain — Drain tab (electrically connected to pin 2; primary thermal path) |
안전 동작 영역 (estimated, typical CoolMOS P7 SOT-223)
일반적인 애플리케이션
IPN80R1K2P7ATMA1 적합 용도: 7 애플리케이션s: Auxiliary / Standby SMPS for White Goods, LED Lighting Drivers, Smart Metering Power Supplies, E-Bike and Personal Mobility Chargers, Industrial Auxiliary Supplies (24 V Bus Systems), Cost-Sensitive Adapters and Wall Plugs, Solid-State Relay and SSR Output Stages.
Auxiliary / Standby SMPS for White Goods
The IPN80R1K2P7ATMA1 is well matched to auxiliary and standby flyback converters in white goods such as refrigerators, washing machines, and dishwashers. Its 800 V VDSS comfortably exceeds the peak rectified mains voltage of 230 VAC (≈325 V) plus reflected flyback stress, providing design margin for snubberless operation. The CoolMOS P7 architecture delivers low gate charge, which reduces driving losses at the typical 65–100 kHz switching frequency of low-power auxiliary supplies. At standby loads below 0.5 W, the integrated ESD gate protection and tightly controlled VGS(th) help maintain stable turn-on behavior and predictable no-load power consumption. The SOT-223 package allows the entire converter to fit on a compact PCB next to the main power stage, which is critical for the cost-sensitive appliance market. Pair with the Infineon ICE2QR0680Z quasi-resonant PWM controller for a proven 5–10 W standby solution.
추천
LED Lighting Drivers
Commercial and industrial LED drivers in the 5–25 W range benefit from the IPN80R1K2P7ATMA1's 800 V blocking voltage and low RDS(on). In a single-stage flyback or buck-boost topology driving a constant-current LED string, the high VDSS rating allows reliable operation on 277 VAC industrial mains without additional surge protection. The CoolMOS P7 family's low Qg and Qgd simplify EMI filter design, helping the driver meet EN 55015 conducted-emission limits with a smaller common-mode choke. Thermal management is straightforward because the SOT-223 drain tab can be soldered to a copper pour that doubles as the heatsink. The IPN80R1K2P7ATMA1 also supports analog dimming by handling the wider duty-cycle range typical of 0–10 V dimming interfaces.
추천
Smart Metering Power Supplies
Smart electricity, gas, and water meters require ultra-reliable auxiliary power supplies that operate for 15+ years on the mains with minimal standby power. The IPN80R1K2P7ATMA1's 800 V rating and rugged body diode make it tolerant of long-duration mains surges, transients, and brownout events that are common in field-deployed metering infrastructure. The CoolMOS P7 architecture's low reverse-recovery charge reduces switching stress and contributes to <50 mW standby power at 230 VAC, which is essential for keeping the meter's own power consumption within regulatory limits. The SOT-223 package is small enough to fit inside the meter's compact enclosure alongside the metrology IC and communication module. Integrated ESD gate protection further improves field reliability.
추천
E-Bike and Personal Mobility Chargers
E-bike battery chargers in the 50–150 W range commonly use a flyback topology operating from universal 100–240 VAC input. The IPN80R1K2P7ATMA1's 800 V VDSS accommodates the high reflected voltage of a wide-Vin flyback while keeping the bulk capacitor voltage under stress. The CoolMOS P7 family's low switching losses allow the charger to meet stringent efficiency standards such as EU CoC Tier 2 without complex valley-snubber circuits. The SOT-223 package's drain tab provides a low-thermal-resistance path, supporting continuous charging current without forced-air cooling. The MOSFET's ESD gate protection is especially valuable in outdoor mobility applications where humidity and static discharge are common.
추천
Industrial Auxiliary Supplies (24 V Bus Systems)
Industrial PLCs, sensor hubs, and motor-drive auxiliary rails often derive their 5 V or 24 V supplies from a small flyback converter powered by 115/230 VAC mains. The IPN80R1K2P7ATMA1's 800 V rating provides headroom over the rectified 230 VAC bus plus inductive spike transients typical of industrial cabinets. The CoolMOS P7's rugged body diode handles hard-commutation events without requiring an external anti-parallel diode, simplifying the BOM. SOT-223 PCB area is minimal, allowing the entire auxiliary supply to fit in less than 1 square inch — useful when the converter is repurposed as an evaluation module on a larger industrial controller board. The integrated ESD gate reduces field failures from installer handling.
추천
Cost-Sensitive Adapters and Wall Plugs
Mobile-device adapters, USB-PD chargers, and small appliance wall plugs in the 5–20 W range are a primary use case for the IPN80R1K2P7ATMA1. In a flyback topology, the 800 V VDSS gives the designer generous margin for the reflected voltage of a wide-output-voltage USB-PD port (5–20 V), allowing a single flyback design to satisfy multiple output profiles. The CoolMOS P7's low gate charge directly improves light-load efficiency, helping adapters meet the DOE Level VI and EU CoC standby power rules. SOT-223 is a footprint designers know well, with a single drain tab that simplifies PCB layout and inspection. Pair with the Infineon XDPS21071 zero-voltage-switching controller for higher-end designs.
추천
Solid-State Relay and SSR Output Stages
Solid-state relays (SSRs) for industrial switching applications often use a high-voltage MOSFET on the AC load side as the switching element. The IPN80R1K2P7ATMA1's 800 V blocking voltage safely switches 230 VAC and 277 VAC industrial mains on either polarity without requiring two MOSFETs back-to-back, and its low RDS(on) reduces on-state conduction loss. The CoolMOS P7 family is designed for repetitive hard-switching events, extending relay contact lifetime. SOT-223 is small enough to fit inside a SIP-style SSR housing alongside the optocoupler and gate drive circuit. ESD protection on the gate simplifies production-line handling.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPN80R1K2P7ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPD80R600P7ATMA1 | IPD80R450P7ATMA1 | IPN80R900P7ATMA1 | IPN80R2K0P7ATMA1 | IPL60R105P7AUMA1 | IPB60R037P7XKSA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SOT-223 (3-pin, 2 + tab) | SOT-223 (3-pin, 2 + tab) - same | SOT-223 (3-pin, 2 + tab) - same | SOT-223 (3-pin, 2 + tab) - same | SOT-223 (3-pin, 2 + tab) - same | SOT-223 (3-pin, 2 + tab) - same | SOT-223 (3-pin, 2 + tab) - same |
| Drain-Source Voltage VDSS | 800 V | 800 V - same | 800 V - same | 800 V - same | 800 V - same | 600 V - lower | 600 V - lower |
| RDS(on) max @ VGS=10V | 1200 mΩ | 600 mΩ (-50%) | 450 mΩ (-62%) | 900 mΩ (-25%) | 2000 mΩ (+67%) | 105 mΩ (-91%) | 37 mΩ (-97%) |
| Continuous Drain Current ID (Tc) | 4.5 A | Higher (lower RDS(on)) | Higher (lower RDS(on)) | Slightly higher | Lower (~3 A) | Higher | Higher |
| Power Dissipation PD (Tc) | 6.8 W | Same package, similar PD | Same package, similar PD | Same package, similar PD | Same package, similar PD | Same package, similar PD | Same package, similar PD |
| Technology | CoolMOS P7 superjunction | CoolMOS P7 superjunction - same | CoolMOS P7 superjunction - same | CoolMOS P7 superjunction - same | CoolMOS P7 superjunction - same | CoolMOS P7 superjunction - same | CoolMOS P7 superjunction - same |
| ESD-Protected Gate | Yes (CoolMOS P7 family) | Yes - same | Yes - same | Yes - same | Yes - same | Yes - same | Yes - same |
주요 차별점
- Highest VDSS rating (800 V) in the Infineon P7 SOT-223 family (vs IPL60R105P7AUMA1 / IPB60R037P7XKSA1)
- Lowest-cost P7 SOT-223 option with 800 V rating (vs IPD80R600P7ATMA1)
- CoolMOS P7 superjunction architecture vs older CoolMOS C3/CE generations (vs Legacy 800 V CoolMOS P6/C3 series in DPAK/TO-220)
설계 노트
Estimated: at ID = 1.5 A and RDS(on) = 1200 mΩ (hot), conduction loss ≈ 2.7 W. With the SOT-223 theta_JA of approximately 80 °C/W on 1 oz copper (300 mm² drain tab pour), junction temperature rise is ≈216 °C above ambient — exceeding the 150 °C limit. Either (a) increase the drain-tab copper area to ≥ 500 mm², (b) reduce continuous current, or (c) substitute the lower-RDS(on) IPD80R600P7ATMA1. Always measure delta_T with a thermocouple on the tab during worst-case thermal testing before committing to production.
SOT-223 drain-tab layout must use a copper pour that extends at least 3 mm beyond the tab on all sides for thermal dissipation. The gate (pin 1) trace should be kept short and routed away from the drain switching node to avoid capacitive coupling into the high-impedance gate. Place the gate-source resistor (typically 10 kΩ to 100 kΩ) as close to the gate pin as possible to suppress parasitic turn-on. Use a ground plane on the source side (pin 3) connected directly back to the controller's GND to minimize source-inductance-induced gate ringing.
Estimated minimum copper area: the SOT-223 datasheet typically specifies RthJA on a 15 mm × 15 mm standard test board; for that pad the rating is ~80 °C/W. For a half-pad (300 mm²), expect ~110 °C/W. Always use a multi-zone copper pour on the drain tab with multiple thermal vias to the opposite PCB layer for production designs. Avoid placing heat-sensitive components (e.g. electrolytic capacitors) above the MOSFET tab — radiated heat can shorten their lifetime.
Do not exceed the VGS absolute maximum of ±20 V (CoolMOS P7 family rating) — driving the gate above this destroys the oxide. Ensure VGS is held below 18 V in transient spikes. The 800 V VDSS rating is at TJ = 25 °C; at elevated temperatures VDSS typically rises by 5–10 %, but the avalanche energy margin shrinks. Avoid continuous operation at VDS near 800 V with high di/dt. Finally, verify that the body diode's reverse-recovery stays within the controller's dead-time window — the CoolMOS P7 is rugged but has non-zero Qrr that the topology must accommodate.
Gate-drive loop inductance is the dominant source of switching transients in this package. Use a Kelvin connection: tie the gate-driver return directly to the MOSFET source pin (pin 3) rather than to the input bulk capacitor ground. This prevents the source-inductance Ldi/dt from feeding back into the gate and causing parasitic turn-on at high di/dt. For hard-switched flyback designs above 100 kHz, consider adding a small ferrite bead in series with the gate to dampen ringing above 50 MHz.
규정 준수 정보
Per Infineon product page. Industrial/consumer grade — not AEC-Q100 qualified for automotive. Halogen-free per Infineon's P7 family datasheet declaration.
