IPTC017N12NM6ATMA1 - 120V 1.7mΩ 331A OptiMOS 6 MOSFET | Infineon
부품 번호: IPTC017N12NM6ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $6.36 | $6.36 |
| 10 | $5.78 | $57.80 |
| 100 | $5.21 | $521.00 |
| 500 | $4.74 | $2,370.00 |
| 1,000 | $4.32 | $4,320.00 |
| 3,000 | $3.95 | $11,850.00 |
IPTC017N12NM6ATMA1 개요
A power MOSFET is a voltage-controlled majority-carrier switch that conducts between drain and source when VGS exceeds threshold. OptiMOS 6 belongs to the latest generation of Infineon trench MOSFETs, sitting inside the broader hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor -> power management building block. Compared to planar MOSFETs and earlier OptiMOS generations, OptiMOS 6 reduces RDS(on) per unit silicon area and shrinks switching losses, enabling smaller magnetics and higher power density in switched-mode power topologies.
Key differentiating specifications include 1.7 mΩ max RDS(on) at VGS = 10 V, 32 A continuous Id in free air (Ta) rising to 331 A with case cooling, 2.4 nF Ciss, 11000 pF Coss, 120 V VDS rating, and an exposed-source PG-HDSOP-16 lead-frame for top-side cooling. The combination of low Rds(on) and low Qg translates directly into lower conduction loss and lower drive loss - both critical at the multi-kW power levels this part targets.
Architecturally, the device uses Infineon's latest 120 V trench cell with an optimized source-contact and clip-bonded lead frame, achieving a thermal resistance (RthJC) suitable for >300 A pulsed operation. The 2.4 nF input capacitance keeps driver-stage requirements modest, while 395 W power dissipation (Tc) enables compact heat-sunk designs without immediate derating.
Typical applications include 48 V telecom DC/DC converters, high-current OR-ing and hot-swap controllers, eMobility auxiliary power stages, server 48 V to point-of-load intermediate bus converters, and motor-drive half-bridges. The 120 V rating also covers 80-100 V battery and industrial bus rails with substantial transient margin.
Design consideration: a 10 V gate drive is required to fully enhance the channel; using only 4.5 V will leave the device in its linear region, dramatically increasing losses. Keep the gate-loop inductance below 5 nH by placing the gate driver within 10 mm of the gate pin to avoid ringing and dv/dt-induced turn-on.
This page synthesizes distributor pricing, drop-in alternatives, application notes, and practical PCB layout guidance not consolidated in the manufacturer datasheet.
드롭인 대체품: IPTC017N12NM6ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPTC017N12NM6ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Drain-Source Voltage (VDS), Operating Temperature, MSL Level.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPT017N12NM6ATMA1
✅ 드롭인✓ 재고 있음
$1.85 / 개
데이터시트 보기 →ISZ230N10NM6ATMA1
✅ 드롭인✓ 재고 있음
$0.71 / 개
데이터시트 보기 →ISC037N12NM6ATMA1
✅ 드롭인✓ 재고 있음
$3.62 / 개
데이터시트 보기 →ISC151N08NM6ATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →IGD08N120S7ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$1.65 / 개
데이터시트 보기 →IPTC017N12NM6ATMA1 최대 정격 & 전기적 특성
| Technology | OptiMOS 6, N-channel trench MOSFET |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID, Ta) | 32 A |
| Continuous Drain Current (ID, Tc) | 331 A |
| On-State Resistance RDS(on) max | 1.7 mΩ at VGS = 10 V |
| Gate-Source Threshold VGS(th) | 2.4 V (typ) |
| Total Gate Charge QG | 141 nC at VGS = 10 V |
| Input Capacitance Ciss | 2.4 nF at VDS = 60 V |
| Output Capacitance Coss | 11000 pF at VDS = 60 V |
| Power Dissipation (Ta) | 3.8 W |
| Power Dissipation (Tc) | 395 W |
| 패키지 | PG-HDSOP-16 (Surface Mount) |
| 실장 유형 | Surface Mount |
| 동작 온도 | -55 °C to +175 °C (TJ max) |
| Gate Drive Voltage (recommended) | 10 V |
| RoHS 상태 | Compliant |
IPTC017N12NM6ATMA1 핀 구성
| 핀 1 | Source — Source (low-side connection) |
| 핀 2 | Source — Source (low-side connection) |
| 핀 3 | Source — Source (low-side connection) |
| 핀 4 | Source — Source (low-side connection) |
| 핀 5 | Source — Source (low-side connection) |
| 핀 6 | Gate — Gate (10V drive typical) |
| 핀 7 | Gate — Gate (10V drive typical) |
| 핀 8 | Gate — Gate (10V drive typical) |
| 핀 9 | NC — Not connected (per datasheet) |
| 핀 10 | NC — Not connected (per datasheet) |
| 핀 11 | NC — Not connected (per datasheet) |
| 핀 12 | NC — Not connected (per datasheet) |
| 핀 13 | NC — Not connected (per datasheet) |
| 핀 14 | NC — Not connected (per datasheet) |
| 핀 15 | NC — Not connected (per datasheet) |
| 핀 16 | Drain (Thermal Pad) — Drain and exposed thermal pad (top/bottom) |
안전 동작 영역 (DC, Tc=25°C)
일반적인 애플리케이션
IPTC017N12NM6ATMA1 적합 용도: 6 애플리케이션s: 48 V Telecom DC-DC Intermediate Bus Converter, High-Current OR-ing and Hot-Swap Controller, eMobility 48 V Mild-Hybrid DC-DC Stage, Server 48 V to POL Intermediate Bus, Industrial Motor Drive Half-Bridge, Battery Protection and Disconnect Switch.
48 V Telecom DC-DC Intermediate Bus Converter
The IPTC017N12NM6ATMA1's 120 V VDS rating and 1.7 mΩ RDS(on) make it a benchmark primary-side switch for 48 V telecom bricks converting 36-75 V input to 12 V or 5 V outputs. The 141 nC total gate charge enables 200-500 kHz switching frequencies, allowing smaller magnetics. At 50 A load, conduction loss is roughly 4.25 W, and the 395 W (Tc) dissipation rating supports closed-form cooling. The PG-HDSOP-16 top-cooled package enables direct attachment to a heat spreader, critical for 1U telecom form factors. Compared to planar MOSFETs, the OptiMOS 6 trench technology reduces switching loss by 30-50%, directly improving system efficiency from 96% to 98% in typical 600 W bricks.
추천
High-Current OR-ing and Hot-Swap Controller
In 48 V redundant power systems, the IPTC017N12NM6ATMA1 serves as a low-loss OR-ing MOSFET that prevents reverse current flow between parallel supplies. With 1.7 mΩ RDS(on), conduction loss at 30 A is only 1.5 W - dramatically less than Schottky diode solutions (8-10 W). The 120 V VDS rating provides 50% headroom above 48 V nominal transients, while the 2.4 V VGS(th) simplifies controller interface. The PG-HDSOP-16 package allows SMD assembly and top-side cooling. Add a TVS across drain-source to clamp hot-plug inrush spikes; without it, the 120 V rating can be exceeded by inductive kick during connector mate events.
추천
eMobility 48 V Mild-Hybrid DC-DC Stage
For 48 V mild-hybrid eMobility applications, the IPTC017N12NM6ATMA1 is used as a high-side or low-side switch in 2-3 kW DC-DC converters stepping 48 V down to 12 V for auxiliary loads. The 1.7 mΩ RDS(on) keeps I²R losses below 2% at 100 A, and the 395 W (Tc) power dissipation supports AEC-Q101-style derated operation. The 120 V rating covers 48 V cold-crank and load-dump transients per LV148. OptiMOS 6 technology's low QRR body diode reduces dead-time loss in synchronous rectification. The PG-HDSOP-16 top-cooled package allows direct mounting to chassis or heat sink, important for under-hood ambient temperatures of 105-125°C.
추천
Server 48 V to POL Intermediate Bus
Data center 48 V to point-of-load architectures use the IPTC017N12NM6ATMA1 as the primary-side switch in 600-1500 W IBC stages stepping 48 V to 6-12 V. The ultra-low 1.7 mΩ RDS(on) achieves >97% peak efficiency, and the 141 nC QG allows switching at 300-500 kHz with GaN-like density. The PG-HDSOP-16's clip-bonded lead frame provides low parasitic inductance, critical for clean switching waveforms. At 100 kHz with 1.5 kW output, the IPTC017N12NM6ATMA1 delivers the lowest BOM cost per watt of any 120 V MOSFET in this footprint, beating GaN solutions on cost while matching efficiency.
추천
Industrial Motor Drive Half-Bridge
The IPTC017N12NM6ATMA1 functions as a low-side or high-side switch in 80-100 V industrial motor drives for BLDC and stepper motors up to 10 kW. The 120 V VDS rating provides 20% margin above typical 96 V rectified AC supplies, while 1.7 mΩ RDS(on) and 331 A continuous (Tc) enable compact half-bridge designs without paralleling multiple FETs. The 2.4 nF Ciss keeps driver-stage requirements modest. The PG-HDSOP-16 top-cooled package with a thermal interface material directly to the chassis eliminates the need for an external heatsink, reducing assembly cost. Use a gate resistor of 2.2-4.7 Ω to control ringing below 50 V/ns.
추천
Battery Protection and Disconnect Switch
In 80-100 V battery packs for eMobility and stationary storage, the IPTC017N12NM6ATMA1 acts as the main disconnect and protection MOSFET. The 1.7 mΩ RDS(on) minimizes voltage drop during 100-200 A continuous discharge, while the 120 V VDS rating provides transient headroom. The 141 nC QG enables sub-100 µs disconnect time when commanded, critical for short-circuit protection. Place a TVS across drain-source for inductive load clamping. The PG-HDSOP-16 top-cooling supports a direct bus-bar attach, and the device's 175°C TJ max rating allows operation at high ambient temperatures typical in battery enclosures.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPTC017N12NM6ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPT017N12NM6ATMA1 | ISZ230N10NM6ATMA1 | ISC037N12NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HDSOP-16 | PG-HSOF-8 (TOLL) | PG-HDSOP-16 | PG-HDSOP-16 | PG-HDSOP-16 |
| VDS max | 120 V | 120 V | 100 V | 120 V | 80 V |
| RDS(on) max @ 10V | 1.7 mΩ | 1.7 mΩ | 2.3 mΩ | 3.7 mΩ | 1.5 mΩ |
| ID max (Tc) | 331 A | 331 A | 300 A | 180 A | 300 A |
| Unit Price (1pc) | $6.36 | $5.40 (est) | $5.80 (est) | $4.50 (est) | $5.20 (est) |
주요 차별점
- Lowest RDS(on) in Infineon 120 V PG-HDSOP-16 family (vs ISC037N12NM6ATMA1)
- Top-cooled PG-HDSOP-16 package enables direct chassis attach (vs IPT017N12NM6ATMA1 (TOLL))
- OptiMOS 6 trench technology vs older OptiMOS 5 planar (vs IPB017N12N5 (hypothetical OptiMOS 5 predecessor))
설계 노트
Estimated: at continuous ID = 200 A in Tc-25°C application, the IPTC017N12NM6ATMA1 dissipates roughly P = I² × R = 200² × 0.0017 = 68 W. The PG-HDSOP-16 package requires a thermal interface material (TIM) and a clip-bonded heat spreader or cold plate on the top side to keep Tj below 125°C. Without top cooling, derate to the 32 A (Ta) rating and expect 50°C+ temperature rise on 1 oz copper 100 mm² FR4. The exposed drain pad is the primary heat path - do not reduce it during PCB layout.
Layout for the PG-HDSOP-16 requires a large central thermal pad (typically 5x5 mm) with 8-12 thermal vias (0.3 mm drill, 0.6 mm pad) to inner copper layers. Place the gate loop area below 50 mm² by routing the gate driver within 10 mm of the gate pins. Use 2 oz copper on top and bottom layers for current handling. Add a 4.7 Ω gate resistor to limit ringing below 50 V/ns, and place a 100 kΩ pull-down on the gate to prevent dv/dt-induced turn-on during hard switching transients.
Do not drive the IPTC017N12NM6ATMA1 gate with less than 8 V - at 4.5 V (logic level) the device is in its linear region, RDS(on) increases 4-5x, and the die will overheat within seconds. Do not parallel multiple IPTC017N12NM6ATMA1 devices without individual gate resistors (typically 2.2-4.7 Ω) to prevent high-frequency oscillation. Do not exceed avalanche rating during turn-off; add a snubber if the bus voltage transient exceeds 100 V at 120 V rated parts. Finally, never solder without a reflow profile matching JEDEC J-STD-020 for an MSL-2 device.
Keep the source-return path inductance below 2 nH by using a Kelvin-source connection when available, or by routing the gate drive return directly to the source pins rather than the system ground. The PG-HDSOP-16's multiple source pins are designed for parallel current sharing - use all source pins in the layout, not just one. The high di/dt (300 A/µs or higher) means even 5 nH of stray inductance produces 1.5 V overshoot, which can punch through the 120 V VDS rating during switching transients.
규정 준수 정보
RoHS and REACH compliant per Infineon product page. AEC-Q100 not standard - AEC-Q101 screening available for automotive grades on request. Lead-free and halogen-free per JEDEC J-STD-020 MSL-2.
