IR2117STRPBF - 600V High-Side Gate Driver, 8-SOIC | Infineon
부품 번호: IR2117STRPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.32 | $1.32 |
| 10 | $1.1 | $11.00 |
| 100 | $0.93 | $93.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.66 | $660.00 |
| 2,500 | $0.58 | $1,450.00 |
IR2117STRPBF 개요
A high-side gate driver IC is a specialized power-management semiconductor that level-shifts a low-voltage PWM control signal (typically 0-5 V or 0-3.3 V CMOS) up to a floating high-voltage rail to drive the gate of a high-side N-channel MOSFET or IGBT in a half-bridge or synchronous-rectifier topology. Gate drivers sit beneath the broader hierarchy of power MOSFET drivers, motor drivers, and isolated gate drivers within the power management IC family. By delivering a fast-switching gate charge (typ. 80 ns turn-on / 40 ns turn-off propagation delay) with dV/dt immunity, the IR2117STRPBF enables efficient switching of the high-side switch in switching-mode power supplies, motor inverters, and electronic ballasts.
Key specifications include a maximum propagation delay of 125 ns (per the manufacturer datasheet), 250 mA peak source current capability, 500 mA peak sink current for fast turn-off, and an undervoltage lockout (UVLO) that prevents driving the external power switch when the bootstrap supply falls below the safe gate-drive threshold. The single-channel non-inverting input simplifies microcontroller interface, and the SOIC-8 surface-mount footprint with industry-standard pinout enables drop-in substitution across the IR21xx family.
The IR2117 utilizes Infineon's HVIC technology combined with latch-immune CMOS, providing monolithic construction with high noise immunity and reliable operation in the presence of fast-switching transients up to 50 V/ns. The bootstrap floating channel architecture eliminates the need for an isolated bias supply on the high-side, reducing BOM count and PCB area in half-bridge and synchronous-buck designs.
Typical applications include switch-mode power supplies (SMPS), half-bridge and full-bridge converters, motor-control inverters (for low-voltage BLDC and stepper drivers), electronic ballasts for HID and fluorescent lamps, and Class-D audio amplifiers where a high-side N-channel MOSFET or IGBT is required. The wide VCC range and CMOS-compatible input also make it a popular choice for driving the high-side switch in 110/220 VAC line-rectified DC bus systems up to 600 V.
When designing with the IR2117STRPBF, ensure that the bootstrap diode and capacitor values are correctly sized for the switching frequency and gate charge of the external MOSFET. Use a fast-recovery diode (UF4007 or better) and a low-ESR ceramic or tantalum bootstrap capacitor; undersized components cause gate-drive voltage droop and shoot-through. The VCC pin should be decoupled with a 0.1 uF ceramic capacitor placed as close as possible to the IC. Negative transients on the VS pin must be clamped with a low-impedance path back to ground to avoid exceeding the absolute maximum ratings.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a faster path from selection to layout.
드롭인 대체품: IR2117STRPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IR2117STRPBF (동일 폼 팩터 및 풋프린트) — 차이점: Package, Configuration, MSL Level, Operating Temperature Range, Function.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRS2181STRPBF
✅ 드롭인✓ 재고 있음
$0.62 / 개
데이터시트 보기 →IRS2104STRPBF
✅ 드롭인✓ 재고 있음
$0.45 / 개
데이터시트 보기 →IRS21834STRPBF
✅ 드롭인✓ 재고 있음
$1.45 / 개
데이터시트 보기 →NCP5106ADR2G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC27714D2
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IR2117STRPBF 최대 정격 & 전기적 특성
| Configuration | High-Side Single Channel |
| 기능 | Gate Driver, Non-Inverting |
| Input Logic Compatibility | CMOS / TTL |
| 출력 수 | 1 |
| Driven Device | N-Channel MOSFET / IGBT |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V |
| Floating Channel Offset Voltage | up to +600 V |
| Peak Source Current (IOUT+) | 250 mA |
| Peak Sink Current (IOUT-) | 500 mA |
| Propagation Delay (Ton/Toff) | 125 ns (max) |
| 상승 시간 | 80 ns (typ) |
| 하강 시간 | 40 ns (typ) |
| Undervoltage Lockout (UVLO) | Yes |
| Negative Transient Voltage Tolerance | Yes, dV/dt immune |
| 동작 온도 범위 | -40 C to +125 C |
| 패키지 / 케이스 | 8-SOIC (0.154 inch / 3.90 mm width) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
| MSL 레벨 | MSL3 (per JEDEC J-STD-020) |
IR2117STRPBF 핀 구성
| 핀 1 | VCC — Logic and gate-drive supply (10 V to 20 V) |
| 핀 2 | IN — Logic input, CMOS-compatible, non-inverting |
| 핀 3 | GND — Logic and low-side ground return |
| 핀 4 | NC — No internal connection (per datasheet) |
| 핀 5 | VS — High-side floating supply return / switch node |
| 핀 6 | VB — Floating supply (bootstrap), referenced to VS |
| 핀 7 | HO — High-side gate drive output |
| 핀 8 | NC — No internal connection (per datasheet) |
일반적인 애플리케이션
IR2117STRPBF 적합 용도: 6 애플리케이션s: Switch-Mode Power Supply (SMPS), Half-Bridge and Full-Bridge Inverter, Electronic Ballast for HID and Fluorescent Lamps, Class-D Audio Amplifier Output Stage, DC-DC Buck/Boost Synchronous Rectifier Driver, Motor Drive Inverter (Low-Power BLDC/PMSM).
Switch-Mode Power Supply (SMPS)
The IR2117STRPBF drives the high-side N-channel MOSFET in 100-500 W half-bridge or forward SMPS converters, where its 600 V floating channel comfortably handles 311 VDC bus from rectified 220 VAC mains. The 0.25 A source / 0.5 A sink peak current is well-matched to MOSFETs with Qg up to approximately 50 nC at 100 kHz switching. Compared to a discrete gate-drive transformer, the IR2117STRPBF eliminates isolation components and reduces BOM by 30-40%, while the 125 ns propagation delay preserves PWM duty-cycle accuracy for closed-loop regulation. The integrated UVLO protects the MOSFET from linear-region operation during bootstrap capacitor charge-up.
추천
Half-Bridge and Full-Bridge Inverter
In half-bridge motor and inverter topologies up to 600 V bus, the IR2117STRPBF drives the upper N-channel IGBT or MOSFET referenced to the switching node. Each IR2117STRPBF is dedicated to a single high-side switch, with the low-side switch typically driven by a complementary low-side driver or by an IR2110/IRS2104 family part. The dV/dt immunity (specified up to 50 V/ns in the datasheet) prevents false triggering in noisy switching environments, and the floating channel tolerance of negative transients on the VS pin allows reliable operation even with substantial stray inductance on the DC bus. Designers should size the bootstrap capacitor for at least 10x the MOSFET gate charge to minimize Vgs droop.
추천
Electronic Ballast for HID and Fluorescent Lamps
Electronic ballasts for high-intensity-discharge (HID) and fluorescent lamps use a half-bridge resonant inverter at 30-100 kHz; the IR2117STRPBF drives the high-side N-channel MOSFET in this topology. Its 600 V rating covers 220 VAC rectified bus, while the 80 ns/40 ns rise/fall times enable efficient resonant switching with low transition loss. The CMOS-compatible logic input interfaces directly with microcontroller or PFC controller PWM outputs, simplifying the ballast control circuit. The bootstrap supply architecture eliminates the need for an isolated bias winding on the resonant inductor, reducing PCB area and BOM cost.
추천
Class-D Audio Amplifier Output Stage
Class-D audio amplifiers use a half-bridge or full-bridge topology to switch 50-500 W audio output stages at 250 kHz to 1 MHz; the IR2117STRPBF can drive the high-side MOSFET in lower-power (<100 W) Class-D designs. The 125 ns propagation delay introduces minor dead-time but is acceptable for 20-50 kHz audio bandwidth applications. Compared to gate-drive transformers or bootstrap-less discrete drivers, the IR2117STRPBF provides clean level shifting of the audio PWM signal without adding distortion. For higher-power Class-D amplifiers, designers typically upgrade to the IRS2181STRPBF family for higher drive current.
추천
DC-DC Buck/Boost Synchronous Rectifier Driver
In synchronous-rectifier buck or boost DC-DC converters, the IR2117STRPBF can drive the high-side N-channel MOSFET acting as the synchronous rectifier (replacing a Schottky diode for higher efficiency). The 600V rating provides comfortable margin for 48 V telecom bus or 380 V rectified-input PFC applications. The 10-20 V VCC range aligns directly with common 12 V auxiliary supply rails found in industrial and telecom systems, eliminating the need for an additional gate-drive bias regulator. For multi-MHz converter designs, an upgrade to the UCC27714D2 or IRS2181STRPBF is recommended for faster switching.
추천
Motor Drive Inverter (Low-Power BLDC/PMSM)
Three-phase BLDC and PMSM motor drive inverters in the 50-300 V / 1-10 A range use three half-bridges, each requiring a high-side gate driver; the IR2117STRPBF is well-suited for low-power applications such as ceiling fans, e-bike controllers, and small pump drives. Three IR2117STRPBF chips (one per phase) drive the three high-side MOSFETs, while a complementary low-side driver (or three IR2104STRPBF half-bridge drivers) drive the low-side switches. The integrated dV/dt immunity is essential in motor drives where the switching node experiences fast transients during PWM commutation. For higher-power industrial servo drives, upgrade to gate drivers with integrated desaturation protection.
추천
추천 제품 요약
엔지니어링 참조 데이터: IR2117STRPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IRS2181STRPBF | IRS2104STRPBF | IRS21834STRPBF | NCP5106ADR2G | UCC27714D2 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Texas Instruments |
| Package | 8-SOIC (0.154 inch) | 8-SOIC (0.154 inch) - same | 8-SOIC (0.154 inch) - same | 8-SOIC (0.154 inch) - same | 8-SOIC (0.154 inch) - same | 8-SOIC (0.154 inch) - same |
| Configuration | High-Side Single | High-Side Single | Half-Bridge (HS+LS) | Half-Bridge (HS+LS) | High-Side Single | High-Side Single |
| Floating Channel Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Peak Source Current | 250 mA | 1.9 A | 0.21 A / 0.36 A | 2.5 A | 0.25 A | 4.0 A |
| Peak Sink Current | 500 mA | 1.9 A | 0.21 A / 0.36 A | 2.5 A | 0.5 A | 4.0 A |
| VCC Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 18 V |
| Propagation Delay | 125 ns max | 200 ns max | 130 ns max | 200 ns max | 100 ns max | 90 ns max |
| Bootstrap Diode | External required | External required | External required | External required | Integrated | External required |
주요 차별점
- Wide floating channel voltage headroom for 220 VAC rectified bus (vs IRS2181STRPBF)
- Low quiescent current draw enables standby-efficient ballast designs (vs UCC27714D2)
- Integrated HVIC technology in SOIC-8 reduces PCB area vs discrete bootstrap solutions (vs Discrete bootstrap + level-shifter)
설계 노트
Bootstrap capacitor sizing is the single most critical design parameter for the IR2117STRPBF. The capacitor must be sized to provide at least 10x the total gate charge (Qg) of the driven MOSFET or IGBT to minimize Vgs droop during the high-side on-time. For example, driving a MOSFET with Qg = 50 nC requires a bootstrap capacitor of at least 0.5 uF. Use a low-ESR ceramic (X7R or X5R) or tantalum capacitor; undersized or high-ESR capacitors cause Vgs voltage sag and increased R_DS(on) dissipation during the on-time, especially at high duty cycle. The bootstrap diode should be a fast-recovery type (UF4007 or better) with reverse recovery time below 100 ns to prevent charge pumping back into VCC.
At switching frequencies above 200 kHz with large MOSFET gate charge, gate-drive power dissipation becomes significant. Estimated: gate-drive loss = Qg x Vgs x Fsw. For Qg = 50 nC, Vgs = 12 V, Fsw = 500 kHz, gate-drive loss is approximately 0.3 W per phase. The 8-SOIC package has theta_JA of approximately 150 C/W on standard JEDEC test board, so this dissipation causes only ~45 C junction temperature rise above ambient - well within the 125 C limit. For multi-channel designs (3-phase motor drives), the dissipation per chip is unchanged but overall PCB thermal density increases; ensure adequate copper pour on the SOIC-8 power and ground pins.
The VCC pin (pin 1) and the VB pin (pin 6) must each be decoupled with a 0.1 uF X7R ceramic capacitor placed within 2-3 mm of the respective pins; add a bulk 1-10 uF electrolytic or tantalum if the VCC source impedance exceeds 1 ohm at the switching frequency. The HO and VS traces must be short and wide (at least 0.5 mm width) to minimize parasitic inductance, which would otherwise cause ringing on the gate and dv/dt-induced false triggering. Keep the high-side switching node (VS) traces physically separated from the low-side IN and GND traces by at least 3 mm to avoid capacitive coupling of switching transients back into the logic input.
Common pitfalls when using the IR2117STRPBF: (1) forgetting the bootstrap diode - the datasheet shows it explicitly in the typical application; (2) using a slow-recovery diode (1N4007 is too slow, switching losses are excessive); (3) initial power-up with no switching - the bootstrap capacitor cannot charge without switching activity, so the high-side FET will not turn on until the first PWM pulse; (4) negative transients on the VS pin beyond the absolute maximum rating - add a low-impedance clamping path (Schottky diode or TVS) from VS to GND if long inductive leads or cables are present; (5) selecting too-small gate resistors, causing excessive ringing and EMI - typically 10-47 ohm gate resistors are appropriate.
규정 준수 정보
RoHS compliant and lead-free per Infineon product page and LCSC listing. Not AEC-Q100 qualified - this part is intended for industrial, consumer, and lighting applications. For automotive-qualified alternatives in the same family, consult Infineon's automotive-grade gate driver portfolio.
