IRL540NSTRLPBF - 100V 36A N-Channel MOSFET | Infineon | D2PAK
부품 번호: IRL540NSTRLPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.05 | $10.50 |
| 100 | $0.89 | $89.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.62 | $620.00 |
| 3,000 | $0.51 | $1,530.00 |
IRL540NSTRLPBF 개요
Key features include HEXFET power MOSFET technology, avalanche-rated single-pulse robustness, low RDS(on) for reduced conduction losses, fast switching transitions, and a logic-level gate threshold that allows direct 5 V MCU interfacing. The TO-263 (D2PAK) footprint provides a low thermal-resistance path via the exposed tab, enabling PCB heatsinking through the drain pad.
This device uses Infineon's HEXFET planar cell architecture with optimized die layout for low figure-of-merit (FOM = RDS(on) × Qg). Compared with standard MOSFETs, the IRL540N family delivers lower conduction loss per unit silicon area, which translates to smaller package size for a given current rating. The logic-level threshold (VGS(th) typically 1-2 V) is achieved by a thinner gate oxide, while still maintaining the 100 V breakdown rating for bus-voltage applications.
Typical applications include DC motor drive and PWM speed control, solenoid and valve drivers, power switching circuits, low-voltage high-current SMPS synchronous rectification, LED drivers, automotive 12 V/24 V bus loads, and battery protection in pack-level BMS designs. The surface-mount D2PAK enables automated assembly and improved thermal coupling compared to through-hole TO-220 alternatives in the same die family.
When designing with this MOSFET, observe safe operating area (SOA) limits: single-pulse avalanche energy must be derated with temperature. The exposed tab must be soldered to a sufficient copper area (≥1 square inch) to keep junction temperature below 175 °C under worst-case load. A gate-source resistor of 10-100 Ω is recommended to suppress ringing.
드롭인 대체품: IRL540NSTRLPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IRL540NSTRLPBF (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Total Gate Charge (Qg), Drain-Source Voltage (VDS), RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRF540NSTRLPBF
✅ 드롭인✓ 재고 있음
$0.74 / 개
데이터시트 보기 →IRFR120NTRLPBF
✅ 드롭인✓ 재고 있음
$0.62 / 개
데이터시트 보기 →IRLR3410TRLPBF
✅ 드롭인✓ 재고 있음
$0.65 / 개
데이터시트 보기 →IRLR3114ZTRPBF
✅ 드롭인✓ 재고 있음
$0.46 / 개
데이터시트 보기 →IRFR5305TRLPBF
✅ 드롭인✓ 재고 있음
$0.38 / 개
데이터시트 보기 →IRFS4321TRLPBF
✅ 드롭인✓ 재고 있음
$1.73 / 개
데이터시트 보기 →IRL540NSTRLPBF 최대 정격 & 전기적 특성
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | 36 A |
| On-Resistance (RDS(on)) max @ VGS=10V | 44 mΩ |
| Gate-Source Voltage (VGS) max | ±16 V |
| Gate Threshold Voltage (VGS(th)) | Logic-level |
| Total Gate Charge (Qg) | 49.3 nC |
| Power Dissipation (PD) at Tc=25°C | 140 W |
| Power Dissipation (PD) at TA=25°C | 3.8 W |
| 동작 온도 범위 | -55°C to +175°C |
| 패키지 | TO-263 (D2PAK) |
| 실장 유형 | Surface Mount |
| Avalanche Energy Rated | Yes (single-pulse) |
| RoHS 상태 | Compliant (LPBF suffix indicates lead-free) |
IRL540NSTRLPBF 핀 구성
| 핀 1 | Gate — Gate input - logic-level drive (5V capable) |
| 핀 2 | Drain — Drain connection (also electrically bonded to metal tab) |
| 핀 3 | Source — Source connection |
| 핀 Tab | Drain (Tab) — Metal back-tab - Drain electrical and thermal contact |
안전 동작 영역 (DC, TC=25°C)
일반적인 애플리케이션
IRL540NSTRLPBF 적합 용도: 6 애플리케이션s: DC Motor Drive and PWM Speed Control, Automotive 12V/24V Bus Switching and Load Drivers, Synchronous Rectification in Low-Voltage SMPS, Battery Management System (BMS) Discharge Control, Solenoid and Valve Drivers for Industrial Control, LED Driver and Lighting Power Switching.
DC Motor Drive and PWM Speed Control
The IRL540NSTRLPBF is well suited for brushed DC motor drive circuits in 12-48 V systems where its 100 V VDS and 36 A continuous drain current cover most small-to-medium motor loads. The logic-level gate threshold enables direct PWM drive from a 5 V microcontroller without a gate-driver stage, simplifying H-bridge and half-bridge designs in robotics and small EVs. With 49.3 nC total gate charge and 44 mΩ RDS(on), switching losses at 25 kHz PWM remain modest.
추천
Automotive 12V/24V Bus Switching and Load Drivers
In automotive 12 V and 24 V body-electronics applications, the IRL540NSTRLPBF serves as a low-side switch for lamps, solenoids, and relay-replacement loads. Its 100 V VDS provides ample derating margin against load-dump transients on the 12 V bus (which can spike to 40 V). The TO-263 D2PAK package is well-suited for surface-mount under-hood PCB assemblies where space is constrained.
추천
Synchronous Rectification in Low-Voltage SMPS
For low-voltage synchronous buck converters in the 12-48 V input range, the IRL540NSTRLPBF can serve as the low-side synchronous rectifier where its 44 mΩ RDS(on) minimizes conduction losses. Its logic-level gate allows direct drive from standard PWM controller ICs without charge-pump circuitry. At switching frequencies of 50-100 kHz, the 49.3 nC Qg keeps gate-drive losses under 1 W, preserving efficiency in 5-15 A output designs.
추천
Battery Management System (BMS) Discharge Control
In multi-cell Li-ion battery packs (12-48 V), the IRL540NSTRLPBF can act as the pack-level discharge MOSFET where its 100 V VDS protects against transient spikes during motor regen or load switching. The logic-level gate enables direct control from a battery monitor IC operating on the pack voltage. At 36 A continuous, it covers e-bike, scooter, and small UPS pack currents without active heatsinking beyond PCB copper.
추천
Solenoid and Valve Drivers for Industrial Control
Industrial solenoid and hydraulic valve drivers benefit from the IRL540NSTRLPBF's logic-level interface and 36 A peak current handling, well matched to 24 V DC solenoid coils with inrush currents up to 15-20 A. The 100 V VDS withstands the inductive flyback spike when paired with a freewheeling diode. Surface-mount D2PAK enables compact PLC output modules and DIN-rail driver cards.
추천
LED Driver and Lighting Power Switching
In high-brightness LED driver circuits for architectural, automotive headlamp, and stage lighting, the IRL540NSTRLPBF can serve as the main switching element in constant-current buck topologies driving 5-15 A LED strings. The 100 V VDS accommodates 48 V input rails with derating, and the logic-level gate allows direct PWM dimming control from a microcontroller for precise brightness modulation without analog filtering.
추천
추천 제품 요약
엔지니어링 참조 데이터: IRL540NSTRLPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IRF540NSTRLPBF | IRFR120NTRLPBF | IRLR3410TRLPBF | IRFS4321TRLPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-263 (D2PAK) | TO-263 (D2PAK) - same | TO-252 (DPAK) | TO-252 (DPAK) | TO-263 (D2PAK) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C | 36 A | 33 A | 9.4 A | 45 A | 85 A |
| On-Resistance (RDS(on)) max @ VGS=10V | 44 mΩ | 44 mΩ | 210 mΩ | 25 mΩ | 9.4 mΩ |
| Gate Threshold Type | Logic-level (5V capable) | Standard (10V required) | Logic-level | Logic-level | Logic-level |
| Total Gate Charge (Qg) | 49.3 nC | 71 nC | 12 nC | 50 nC | 62 nC |
| Power Dissipation (PD) @ Tc=25°C | 140 W | 130 W | 48 W | 79 W | 160 W |
주요 차별점
- Logic-level gate drive eliminates gate-driver stage (vs IRF540NSTRLPBF)
- Higher continuous drain current in D2PAK (vs IRFS4321TRLPBF)
- Smaller footprint option available in same family (vs IRFR120NTRLPBF (DPAK))
설계 노트
The D2PAK package achieves its 140 W power dissipation rating ONLY with the metal tab soldered to a PCB copper area providing thermal resistance below ~0.5 °C/W. Estimated: with 1 square inch of 2 oz copper on each layer of a 4-layer board, θJA ≈ 40 °C/W, limiting practical dissipation to ~3.7 W at TA=25 °C without a dedicated heatsink. For continuous loads above 2-3 A at elevated ambient, use an active heatsink or upgrade to a TO-220 version of the same die family.
Keep the gate-drive loop (gate resistor → gate pin → source pin → gate-driver ground return) area minimal — ideally under 1 cm² — to minimize parasitic inductance that causes gate-oscillation and dv/dt-induced turn-on. Place the gate resistor (10-100 Ω) physically adjacent to the gate pin. The exposed drain tab must be soldered to a copper pad large enough to dissipate full-load power without exceeding 175 °C junction temperature.
Do not exceed VGS of ±16 V absolute maximum even though the device is logic-level rated — ESD strikes from handling or transformer coupling can exceed this. Add a 10 kΩ gate-source resistor to ensure the MOSFET stays off when the gate drive is floating or high-impedance during MCU reset. For inductive loads, add a freewheeling diode or TVS across the drain-source to clamp the inductive kick below the 100 V VDS rating.
For PWM switching above 20 kHz, the 49.3 nC total gate charge requires a gate-driver capable of sourcing/sinking > 0.5 A peak to achieve clean rise/fall times below 100 ns. If driven directly from a 5 V MCU GPIO (typically 4-8 mA source capability), switching time stretches to ~500 ns and switching losses can exceed conduction losses in SMPS applications. Use a dedicated gate-driver (e.g., 1EDI20N12AF or similar) for high-frequency designs.
규정 준수 정보
LPBF suffix confirms lead-free / Pb-free plating. RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified (automotive grade versions may exist with different suffix). Halogen-free status not explicitly stated in available data.
