K4A4G165WD-BCRC - 4Gb DDR4 SDRAM 2400MHz | Samsung
부품 번호: K4A4G165WD-BCRC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $6.48 | $6.48 |
| 10 | $6.1 | $61.00 |
| 100 | $5.75 | $575.00 |
| 500 | $5.4 | $2,700.00 |
| 1,000 | $5.1 | $5,100.00 |
K4A4G165WD-BCRC 개요
DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both edges of the clock (double data rate), achieving high bandwidth at low operating voltage. In the memory hierarchy, DDR4 DRAM sits as main system memory between the processor cache and non-volatile storage, and is the dominant DRAM standard for servers, desktops, industrial PCs, and embedded controllers.
Key features of the K4A4G165WD-BCRC include the 1.2V core supply that reduces dynamic power versus 1.5V DDR3, the 16-bit data bus organization that suits 32-bit and 64-bit memory buses built from two or four components, on-die termination (ODT), and DDR4 standard features such as bank group architecture and CRC/auto precharge capabilities. The BCRC speed bin corresponds to DDR4-2400 (CL17) operation per the datasheet speed tables.
Architecturally, the D-die family implements the DDR4 bank-group structure that allows back-to-back accesses to different bank groups, improving effective bandwidth at the same core frequency. The 96-ball FBGA (Fine-Pitch Ball Grid Array) surface-mount package provides short interconnects and good signal integrity for 2400 Mbps operation.
Typical applications include industrial PCs and embedded x86/ARM controller memory, networking equipment line cards, FPGA-based processing platforms requiring 16-bit DDR4 interfaces, and replacement or repair of desktop/IPC DIMM components. The x16 organization is especially common in embedded designs where the memory controller supports a 16-bit DDR4 channel.
A key design consideration is signal integrity: at 2400 Mbps, fly-by routing, per-byte termination and careful length matching per JEDEC DDR4 layout guidelines are required. Verify the memory controller's SPD/ODT programming and speed bin support (CL17 at 2400) before layout.
This page synthesizes distributor pricing, drop-in alternatives from the same Samsung DDR4 family, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: K4A4G165WD-BCRC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4A4G165WD-BCRC (동일 폼 팩터 및 풋프린트) — 차이점: Package, Interface, Operating Temperature, RoHS Status, Data Rate.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4A4G165WD-BCPB
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$3.1 / 개
데이터시트 보기 →K4A4G165WE-BCRC
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4A4G165WF-BCRC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$17.08 / 개
데이터시트 보기 →K4A4G165WE-BCTD
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$11.38 / 개
데이터시트 보기 →K4A4G165WF-BCTD
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$8.2031 / 개
데이터시트 보기 →K4A4G165WF-BCWE
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$10.65 / 개
데이터시트 보기 →K4A4G165WD-BCRC 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Density | 4 Gbit |
| 메모리 구성 | 256M x 16 |
| Speed Bin | DDR4-2400 (BCRC) |
| 공급 전압 | 1.2 V |
| 패키지 | FBGA-96 |
| 실장 유형 | Surface Mount |
| Process Generation | Samsung D-die |
| 인터페이스 유형 | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | Yes |
| Data Mask Function | Yes |
| Auto Precharge | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| RoHS 상태 | Lead free / RoHS Compliant |
K4A4G165WD-BCRC fbga-96 핀 구성 가이드
K4A4G165WD-BCRC(fbga-96 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4A4G165WD-BCRC.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4A4G165WD-BCRC 적합 용도: 6 애플리케이션s: Industrial PC Main Memory, FPGA Processing Platforms, Networking Equipment Line Cards, Desktop and IPC Memory Repair (Component Level), Embedded Vision and Edge AI Boards, Test and Measurement Instrumentation.
Industrial PC Main Memory
Industrial PCs and embedded x86 controllers rely on soldered-down DDR4 for vibration immunity and long product lifecycles. The K4A4G165WD-BCRC fits this role with 4Gb density, 256M x 16 organization, and 1.2V operation at the DDR4-2400 speed bin, giving roughly 19.2 GB/s peak bandwidth per 64-bit channel of four x16 parts. Because the FBGA-96 package is surface-mounted, it survives shock and thermal cycling better than DIMM sockets. Designers should match the controller's DDR4-2400 CL17 timing table and use fly-by address routing with proper ODT programming; unlike DIMMs, soldered DRAM requires the SPD values to be hardcoded in the BIOS or bootloader.
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FPGA Processing Platforms
FPGA boards for video processing, data acquisition, and machine vision frequently use x16 DDR4 components on 16-bit or 32-bit memory interfaces. The K4A4G165WD-BCRC's 2400 MT/s rate and bank-group architecture let a single 16-bit FPGA DDR4 controller reach about 4.8 GB/s per component. Its 1.2V rail matches the DDR4 PHY calibration assumptions in vendor memory-controller IP. When instantiating memory-controller IP such as Xilinx MIG, select equivalent generic DDR4-2400 x16 settings since Samsung models may not be preset; then validate with a full-controller traffic test. On-die termination and ZQ calibration simplify board-level termination design at this data rate.
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Networking Equipment Line Cards
Switch, router, and network-appliance line cards use DDR4 as packet-buffer and control-plane memory, where bandwidth and deterministic access matter. The K4A4G165WD-BCRC provides 4Gb per component, allowing 8 Gbit buffers from just two x16 devices on a 32-bit bus, at 1.2V power draw that is attractive in always-on networking hardware. The DDR4-2400 bin sustains the streaming read/write patterns typical of packet buffering, and CRC plus auto-precharge features reduce software overhead. Layout should follow fly-by clock/address topology with per-controller ODT tuning; signal integrity at 2400 MT/s demands controlled impedance and length matching on DQS/DQ pairs.
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Desktop and IPC Memory Repair (Component Level)
Component-level repair of desktop boards, graphics cards, and integrated-memory systems often requires replacing individual DDR4 BGA components. The K4A4G165WD-BCRC is a common original fitment in such systems, so matching D-die, 256M x 16 organization, and the DDR4-2400 BCRC bin preserves original timing tables and SPD programming. The FBGA-96 footprint allows reballing onto the same land pattern. Repair technicians should verify that the replacement's speed bin equals or exceeds the original and that BIOS-configured timings match; a slower-bin substitute may fail POST on platforms programmed for 2400 MT/s CL17 operation.
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Embedded Vision and Edge AI Boards
Embedded vision SoCs and edge-AI accelerators commonly expose a 16-bit or 32-bit DDR4 interface for frame buffers and neural-network weight storage. The K4A4G165WD-BCRC's 4Gb capacity holds multi-megapixel frame buffers with headroom, while its 2400 MT/s bandwidth minimizes display-tear and inference-latency bottlenecks on a 16-bit channel (about 4.8 GB/s). Its 1.2V supply suits thermally constrained fanless enclosures. Designers should budget refresh (tREFI) overhead and enable ODT values recommended by the SoC vendor; the CRC feature helps in systems where memory errors would corrupt video output or model execution.
추천
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators need deep acquisition memory with sustained streaming bandwidth. The K4A4G165WD-BCRC provides 4Gb per device at DDR4-2400, letting instruments implement multi-gigabyte capture buffers from a modest device count at 1.2V, reducing total board power versus older DDR3 designs. Bank-group interleaving supports the continuous write streams generated by high-sample-rate front ends. Instruments benefit from the part's CRC and ZQ calibration for long-term reliability under continuous duty. Firmware must implement controller calibration routines at every power-up, and thermal design should account for sustained write activity raising DRAM junction temperature.
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추천 제품 요약
엔지니어링 참조 데이터: K4A4G165WD-BCRC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4A4G165WD-BCPB | K4A4G165WE-BCRC | K4A4G165WF-BCRC | K4A4G165WE-BCTD |
|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed Bin | DDR4-2400 (BCRC) | DDR4-2133 | DDR4-2400 | DDR4-2400 | DDR4-2666 |
| Die Generation | D-die | D-die | E-die | F-die | E-die |
| RoHS | Compliant / Lead free | Compliant / Lead free | Compliant / Lead free | Compliant / Lead free | Compliant / Lead free |
주요 차별점
- Same-die speed-bin headroom (vs K4A4G165WD-BCPB)
- Newer-node availability in the same footprint (vs K4A4G165WE-BCRC)
- 16-bit organization simplifies narrow-bus embedded designs (vs K4A4G085WD-BCRC (x8))
설계 노트
At the DDR4-2400 data rate (1200 MHz clock), DQ/DQS and address/command routing demand controlled-impedance traces, length matching within the DDR4 standard skew budgets, and fly-by topology for clock/address/command with per-DIMM-style termination. Route DQ and DQS diff pairs over solid ground planes, avoid crossing plane splits, and follow the Samsung datasheet layout guidelines for the FBGA-96 ballout. On 16-bit designs, keep the DQS0/DQS1 byte-lane pairs matched intra-pair to under the spec skew; failures here typically appear as intermittent calibration errors at temperature extremes.
Provide a clean 1.2V rail (VDD) plus VDDQ and separate termination supply per the datasheet power balls, decoupled with bulk capacitance (tens of uF) at the VRM and high-frequency ceramics (0.1 uF, 0.01 uF) at DRAM power balls. DDR4 draw is bursty: a four-device 64-bit bus at 2400 MT/s can transient several amps during back-to-back writes. Estimated: a single 4Gb x16 device draws on the order of 300-600 mA average under active streaming (exact ICCA/ICC values in datasheet), so size the regulator for the sum plus margin and verify VDDQ droop during calibration with an oscilloscope.
Three frequent mistakes: (1) substituting a slower speed bin (e.g., BCPB DDR4-2133) where the controller is programmed for DDR4-2400 CL17 - the system will fail training; (2) hardcoding SPD/timings that match a different die generation when second-sourcing E-die or F-die parts - always re-run memory training and re-verify at temperature corners; (3) ignoring refresh overhead (tREFI/tRFC) in bandwidth budgets, which costs a few percent of theoretical throughput. Also confirm the exact die revision against Samsung datasheet revision history before production release.
규정 준수 정보
Distributor listing states Lead free / RoHS Compliant (ICComponents). REACH, halogen-free, and conflict-minerals declarations not included in provided data - request from Samsung or distributor.
