K4A4G165WE-BCTD - 4Gb DDR4 SDRAM 256Mx16 1.2V | Samsung
부품 번호: K4A4G165WE-BCTD ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $11.38 | $11.38 |
| 10 | $11.38 | $113.80 |
| 100 | $22.47 | $2,247.00 |
| 500 | $22.47 | $11,235.00 |
| 1,000 | $22.47 | $22,470.00 |
K4A4G165WE-BCTD 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family standardized by JEDEC. In the system hierarchy, this component sits at the semiconductor memory level as volatile main-system memory, sitting below storage (NAND/SSD) and alongside the memory controller inside a CPU or chipset. Compared with DDR3, DDR4 lowers core voltage from 1.5V to 1.2V, doubles bank groups, and improves burst length to BL8, delivering higher bandwidth at lower power.
Key features of the K4A4G165WE-BCTD include its 4Gb E-die core, x16 data interface suited to controllers without 64/72-bit wide buses, and the industrial-standard 0C to +85C commercial temperature range. The FBGA-96 package offers excellent signal integrity and low parasitic inductance, enabling reliable operation at DDR4 data rates on a compact footprint. The x16 organization simplifies board routing for embedded controllers, networking SoCs, and FPGA-based designs that use 16-bit or 32-bit memory buses.
Technically, the device implements DDR4 features such as bank group architecture, on-die termination (ODT), and DLL-based read/write calibration. As an E-die product, it belongs to Samsung's mainstream DDR4 generation that is widely used across industrial and consumer platforms. Designers must honor JEDEC DDR4 command timing, ZQ calibration, and power-up initialization sequences as detailed in the Samsung K4A4G165WE datasheet (Rev. 1.4, Jun. 2016).
Typical applications include embedded controllers, industrial PCs, network appliances, set-top boxes, gaming consoles, and FPGA co-processing boards. The x16 width makes it especially attractive for cost-optimized designs using one or two memory chips rather than full DIMM population.
A key design consideration is memory-controller compatibility: verify that your CPU, FPGA memory controller, or SoC supports DDR4 with x16 devices at your target data rate, and follow the datasheet fly-by/termination guidance for PCB layout. Power distribution must tolerate the 1.14V to 1.26V VDD window with adequate decoupling.
This page synthesizes distributor pricing, drop-in alternatives from Samsung and Micron, and practical design notes not found in the manufacturer datasheet, providing engineers a single citable reference for the K4A4G165WE-BCTD.
드롭인 대체품: K4A4G165WE-BCTD — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4A4G165WE-BCTD (동일 폼 팩터 및 풋프린트) — 차이점: Package, Interface, RoHS Status, Data Rate, Operating Temperature.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4A4G165WF-BCTD
✅ 드롭인✓ 재고 있음
$8.2031 / 개
데이터시트 보기 →K4A4G165WG-BCWE
✅ 드롭인✓ 재고 있음
$16.9 / 개
데이터시트 보기 →K4A4G165WF-BCWE
✅ 드롭인✓ 재고 있음
$10.65 / 개
데이터시트 보기 →K4A4G085WE-BCTD
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4AAG165WC-BCWE
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT40A256M16GE-075E:B
✅ 드롭인✓ 재고 있음
$3.95 / 개
데이터시트 보기 →K4A4G165WE-BCTD 사양
| 메모리 유형 | DDR4 SDRAM (volatile DRAM) |
| 메모리 크기 | 4 Gbit |
| Memory Organization | 256M x 16 |
| 인터페이스 | Parallel, x16 |
| Supply Voltage (VDD) | 1.2 V (1.14 V to 1.26 V) |
| Die Generation | E-die |
| 패키지 | FBGA-96 (TFBGA) |
| Terminal Count | 96 |
| 동작 온도 | 0C to +85C |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant (per JLCPCB listing) |
| Product Status | Active |
| Datasheet Revision | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Burst Length | BL8 (JEDEC DDR4) |
| Bank Group Architecture | Yes (DDR4) |
K4A4G165WE-BCTD fbga-96 (tfbga) 핀 구성 가이드
K4A4G165WE-BCTD(fbga-96 (tfbga) 패키지)의 핀 구성입니다. 핀 번호, 기능, 연결 다이어그램은 제조사 데이터시트에 정의되어 있습니다. 정확한 풋프린트와 솔더링 지침은 해당 문서를 참조하십시오.
다음에 대한 상세 핀아웃 데이터 없음: K4A4G165WE-BCTD.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4A4G165WE-BCTD 적합 용도: 6 애플리케이션s: Embedded Industrial Controllers, FPGA Co-processing and Prototyping Boards, Network Appliance Main Memory, Set-Top Boxes and Smart TV Platforms, Gaming and Graphics Buffer Memory, Test and Measurement Instrument Memory.
Embedded Industrial Controllers
The K4A4G165WE-BCTD's 4Gb density and 256M x 16 organization make it a natural main-memory choice for embedded industrial controllers running Linux or RTOS stacks. Its 0C to +85C operating range covers standard industrial enclosures, and the 1.2V DDR4 rail integrates cleanly with industrial PMICs such as the TI TPS54218 family. The x16 bus halves trace count versus two x8 devices in a 32-bit configuration, easing four-to-six layer PCB routing around dense connector fields. Placed on a fly-by or short stub topology with on-die termination (ODT) enabled per JEDEC DDR4 practice, it delivers reliable operation with standard controller training routines. For BOM resilience, the Micron MT40A256M16GE-075E:B offers a pin-compatible second source.
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FPGA Co-processing and Prototyping Boards
FPGA designs frequently use x16 DDR4 because FPGA memory-controller hard blocks or soft PHYs (e.g., Xilinx MIG, Intel EMIF) support 16-bit DDR4 interfaces with straightforward pin planning. The K4A4G165WE-BCTD's FBGA-96 footprint aligns with common FPGA board layouts, and 4Gb (256MB) capacity suits video frame buffers, DSP coefficient stores, and packet buffering. Designers should match the Samsung -BCTD speed bin to the FPGA PHY's supported data rate during MIG configuration and verify ZQ calibration resistor placement (RZQ 240 ohm) per the Samsung datasheet. Signal integrity benefits from length-matched DQS/DQ groups and solid 1.2V/2.5V VPP planes. K4A4G165WG-BCWE can be substituted for higher-bandwidth builds.
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Network Appliance Main Memory
Enterprise and edge networking platforms (switches, routers, firewalls) rely on DDR4 for control-plane memory, packet-buffer management, and CPU companion DRAM. The K4A4G165WE-BCTD fits networking SoC designs whose memory controllers expose 16-bit channels, and multiple chips can be ganged into 32-bit or 64-bit configurations on a shared command bus. DDR4's bank-group architecture improves random-access efficiency for table lookups compared with DDR3. At 1.2V, per-chip power is substantially lower than 1.5V DDR3 equivalents, reducing thermal load in fanless network hardware operating to +85C. The E-die generation is broadly qualified across networking silicon vendor support lists, simplifying platform certification.
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Set-Top Boxes and Smart TV Platforms
Cost-optimized consumer AV platforms such as IPTV set-top boxes and smart TV SoCs commonly pair single or dual x16 DDR4 chips with the main SoC. The K4A4G165WE-BCTD's 4Gb capacity (512 MB) supports HD/4K streaming stacks with middleware, and its x16 organization matches the 16-bit or 32-bit DDR4 PHYs prevalent in consumer SoCs. The FBGA-96 package keeps the memory footprint under 15 x 10 mm class, fitting compact main boards. Because these platforms are cost-sensitive, the E-die part's mainstream pricing is an advantage, and the pin-compatible K4A4G165WF generation provides a drop-in migration path when speed headroom or supply continuity is needed. RoHS compliance supports global consumer certification.
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Gaming and Graphics Buffer Memory
Entry-level gaming peripherals, arcade systems, and display-buffers use x16 DDR4 as texture and framebuffer memory attached to SoCs or GPU-companion chips. The K4A4G165WE-BCTD's BL8 burst and bank-group architecture deliver the sequential bandwidth needed for double-buffered video output, while 256MB capacity handles 1080p frame stores with compositing layers. Designers should size the 1.2V VDD rail for burst current and place one bulk capacitor per chip plus 0.1uF ceramics at each VDD ball cluster per Samsung layout guidance. For platforms needing more bandwidth, the same-footprint K4A4G165WG-BCWE (3200 Mbps class) upgrades performance without PCB respin - a practical mid-lifecycle performance bump.
추천
Test and Measurement Instrument Memory
Bench instruments such as logic analyzers, data loggers, and signal generators use DDR4 to buffer capture data and run embedded UI stacks. The K4A4G165WE-BCTD's industrial temperature rating and standard JEDEC interface integrate with instrument SoCs and FPGAs, while the x16 bus simplifies routing on dense multi-layer instrument boards. Capture pipelines benefit from DDR4's improved bank parallelism for sustained write streams. Long product lifecycles matter in instrumentation: the availability of pin-compatible Samsung W/F generations and the Micron MT40A256M16GE-075E:B second source protects multi-year production programs against allocation cycles. Verify controller speed-bin support and thermal budget (VDD 1.14V-1.26V window) during design review.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4A4G165WE-BCTD — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4A4G165WF-BCTD | K4A4G165WG-BCWE | MT40A256M16GE-075E:B | ||
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | ||
| Package | FBGA-96 (TFBGA) | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 8 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 512M x 8 | 1G x 16 | 256M x 16 |
| Supply Voltage | 1.2 V (1.14 V - 1.26 V) | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
주요 차별점
- Cost-optimized E-die generation (vs K4A4G165WG-BCWE)
- x16 organization halves trace count (vs K4A4G085WE-BCTD)
- Drop-in migration path within one footprint (vs K4A4G165WF-BCTD)
설계 노트
The K4A4G165WE-BCTD requires a 1.2V VDD rail held within 1.14V-1.26V plus the DDR4 VPP 2.5V rail. Estimated: at typical DDR4 x16 idle-to-active current of several hundred milliamps per chip, budget the regulator for peak burst current with at least 10uF bulk capacitance per device plus 0.1uF ceramics at each VDD ball cluster. Power-rail sequencing and power-ramp per JEDEC DDR4 initialization in the Samsung K4A4G165WE datasheet (Rev. 1.4) must be followed or controller training may fail.
Route DQ/DQS/DM as length-matched groups; for single-chip x16 designs a short-point-to-point topology with ODT enabled usually avoids fly-by complexity. Keep CK/CK# pair tightly coupled with 100-ohm differential routing practice. Place the 240-ohm RZQ calibration resistor close to the ZQ ball with a dedicated low-impedance ground return. The FBGA-96 footprint files from LCSC (part C2920055) can seed the land pattern; verify via-in-pad rules against your fab capability.
Do not assume pin compatibility between x8 and x16 DDR4 variants: the K4A4G085WE-BCTD shares the FBGA-96 package but its ball map and controller configuration differ from the x16 K4A4G165WE-BCTD. Also confirm the memory controller's qualified vendor list and supported speed bins before swapping dies generations (E-die to F/G-die); update firmware training tables and timing parameters accordingly. DDR3 parts with similar ball counts are NOT substitutes - DDR4 signaling and initialization are incompatible.
규정 준수 정보
RoHS compliant per JLCPCB listing (part C2920055). REACH, halogen-free, and conflict-minerals declarations not found in provided data - request Samsung environmental compliance documents for the specific date code.
