K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
부품 번호: K4A8G165WB-BCRC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $15.47 | $15.47 |
| 10 | $14.7 | $147.00 |
| 100 | $13.93 | $1,393.00 |
| 500 | $13.16 | $6,580.00 |
| 1,000 | $12.4 | $12,400.00 |
K4A8G165WB-BCRC 개요
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the volatile working memory that holds active data and instructions between a processor and long-term storage. Within the memory hierarchy, DDR4 DRAM sits above caches and below storage, offering gigabyte-class density at nanosecond-class latency. DDR4 improved on DDR3 by lowering VDD from 1.5V/1.35V to 1.2V, doubling bank groups to eight via Bank Group Architecture, and adding features such as on-die termination refinements and CRC.
Key features of the K4A8G165WB family include the auto precharge function, an asynchronous reset function for rapid initialization, CRC and CA parity protection for command/address integrity, dynamic on-chip termination (ODT) that reduces signal reflections on high-speed buses, and ZQ calibration for accurate output driver impedance matching across temperature and voltage drift. The x16 organization with 512M addressable words suits systems that use one or two DRAMs without the complexity of x8-wide multi-chip topologies.
The B-die 8Gb monolithic die maximizes density per component, reducing component count and board area compared with stacking multiple 4Gb devices. Its 2400 Mbps/pin data rate delivers 4.8 GB/s per device at the x16 interface width, adequate for embedded ARM, FPGA, and networking SoC memory controllers that implement DDR4-2400.
Typical applications include industrial control systems, network communication equipment, servers and storage controllers, and test and measurement instrumentation, where the -40C to +95C grade and CRC/CA parity support robust operation.
Design consideration: DDR4-2400 signal integrity demands careful length-matched routing, reference-plane-continuous fly-by or point-to-point topology, and controller ZQ calibration sequencing per the Samsung datasheet initialization procedure.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: K4A8G165WB-BCRC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4A8G165WB-BCRC (동일 폼 팩터 및 풋프린트) — 차이점: Package, Operating Temperature, Data Rate, Interface, Refresh.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4A8G165WB-BCPB
✅ 드롭인✓ 재고 있음
$2.3 / 개
데이터시트 보기 →K4A8G165WB-BCTD
✅ 드롭인✓ 재고 있음
$37 / 개
데이터시트 보기 →K4A8G165WB-BCWE
✅ 드롭인✓ 재고 있음
$6.55 / 개
데이터시트 보기 →K4A8G165WC-BCRC
✅ 드롭인✓ 재고 있음
$23 / 개
데이터시트 보기 →K4A4G165WD-BCRC
✅ 드롭인✓ 재고 있음
$5.1 / 개
데이터시트 보기 →K4A8G165WB-BCRC 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM (DRAM, volatile) |
| 메모리 크기 | 8 Gb |
| Memory Organization | 512M x 16 |
| 인터페이스 | Parallel (DDR4 SDRAM bus) |
| Supply Voltage (VDD) | 1.2 V |
| 데이터 속도 | 2400 Mbps/pin (DDR4-2400) |
| Technology | CMOS, B-die 8Gb die |
| 패키지 | 96-ball FBGA (PBGA96) |
| 실장 유형 | Surface Mount |
| 동작 온도 | -40C to +95C |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC / CA Parity | CRC function supported |
| On-Chip Termination | Dynamic ODT |
| ZQ Calibration | Yes |
| Clock Frequency | 1200 MHz (DDR4-2400) |
K4A8G165WB-BCRC 96-ball fbga (pbga96) 핀 구성 가이드
K4A8G165WB-BCRC(96-ball fbga (pbga96) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4A8G165WB-BCRC.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4A8G165WB-BCRC 적합 용도: 6 애플리케이션s: Industrial Control Systems, Network Communication Equipment, Servers and Storage Controllers, Embedded Computing and Single-Board Computers, Test and Measurement Instrumentation, Automotive-adjacent and Rugged Embedded Systems.
Industrial Control Systems
The K4A8G165WB-BCRC fits industrial PLCs, motion controllers, and HMI platforms because its -40C to +95C operating range covers unconditioned cabinet environments, and its CRC and CA parity functions protect command/address integrity against electrical noise from drives and switching loads. As the main working memory for an ARM or FPGA-based controller, one 512M x16 device provides 1 GB of buffering for recipe storage, logging, and real-time control loops at 2400 Mbps. Place the DRAM point-to-point from the processor with length-matched traces and dynamic ODT enabled; the ZQ calibration resistor maintains driver impedance accuracy over the full temperature swing, reducing eye-closure risk in thermally cycling enclosures.
추천
Network Communication Equipment
Routers, switches, and baseband cards use the K4A8G165WB-BCRC as packet-buffer and table memory. The 512M x16 organization suits designs that populate one or two DRAMs beside a network processor, and the 2400 Mbps data rate supplies 4.8 GB/s of read/write bandwidth per device for queuing and classification workloads. CRC on the DDR4 bus plus dynamic on-chip termination keeps signaling robust on multi-layer backplane-adjacent PCBs where trace stubs and impedance discontinuities would otherwise close the data eye. Mount the ZQ calibration resistor (240 ohm, 1%) to SGND near the ball, and follow the fly-by or point-to-point topology rules in the Samsung datasheet to preserve timing margin at DDR4-2400 in dense switch fabric layouts.
추천
Servers and Storage Controllers
In entry-level servers, RAID cards, and SSD controllers, the K4A8G165WB-BCRC serves as firmware execution memory, cache, and metadata buffer. The 8Gb B-die die maximizes capacity per component, letting a controller board reach multiple gigabytes with a handful of FBGA-96 parts instead of stacked lower-density devices, improving reliability by reducing solder-joint count. The asynchronous reset function enables rapid re-initialization after controller faults, important for high-availability storage. Because server environments stay within 0C to +85C ambient under the component's 95C limit, thermal design should still verify airflow over the package; Estimated: DDR4-2400 activity dissipates on the order of hundreds of milliwatts per device, manageable with standard airflow.
추천
Embedded Computing and Single-Board Computers
Embedded ARM boards, gateways, and IoT edge platforms adopt the K4A8G165WB-BCRC because one x16 component provides 1 GB of DDR4 with a minimal footprint: the 96-ball FBGA occupies roughly 10 mm x 14.5 mm of board area, fitting beneath or beside the SoC in compact layouts. At 1.2V VDD the device improves energy efficiency versus DDR3, extending battery-backed and thermally constrained designs. SoC DDR controllers that support DDR4-2400 x16 initialize the device using its asynchronous reset and ZQ calibration sequence. Designers should keep the clock and strobes length-matched within controller skew budgets and reference the Samsung datasheet initialization timing before releasing firmware memory-init code.
추천
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and arbitrary waveform generators require deep capture memory with predictable latency, and the K4A8G165WB-BCRC provides 512M x16 words of DDR4 buffer at 2400 Mbps. CRC and CA parity flag bus errors that would otherwise corrupt acquired waveforms silently, an important diagnostic feature in calibration-grade instruments. The -40C to +95C grade accommodates bench instruments transported between environments. Instrument designers typically pair the DRAM with an FPGA memory controller; ensure the write-leveling and read-training routines in the controller handle the BCRC bin's timing parameters from the Samsung datasheet, and budget capture-bandwidth against the 4.8 GB/s per-device streaming limit when architecting multi-DRAM banks.
추천
Automotive-adjacent and Rugged Embedded Systems
Telematics units, dash-side recording platforms, and rugged gateways that are not AEC-Q100-certified but face harsh environments use the K4A8G165WB-BCRC for its -40C to +95C rating and CRC-protected bus. The 8Gb x16 device stores event logs, map tiles, and video ring buffers for camera-based systems, with 2400 Mbps bandwidth supporting sustained recorder write streams. Dynamic ODT and ZQ calibration preserve signal integrity across automotive-grade thermal cycling of the enclosure (note: the commercial/industrial grade part itself is not AEC-Q100 qualified; confirm qualification requirements with Samsung for true automotive deployments). Layout should avoid routing DDR4 near ignition-noise sources and use solid reference planes under all data groups.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4A8G165WB-BCRC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4A8G165WB-BCPB | K4A8G165WB-BCTD | K4A8G165WB-BCWE | K4A4G165WD-BCRC |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA family - same footprint class |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 4 Gb (-50%) |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Features | Auto precharge, async reset, CRC, dynamic ODT, ZQ cal | Same feature set (same die) | Same feature set (same die) | Same feature set (same die) | Same DDR4 feature set, lower density |
주요 차별점
- Highest density in the WB x16 family (vs K4A4G165WD-BCRC)
- Industrial temperature grade (vs K4A8G165WB-BCPB)
- Full DDR4 integrity feature set (vs K4A8G165WB-BCTD)
설계 노트
DDR4-2400 on an x16 bus demands length-matched routing: keep DQ/DM/DQS trace skew within the controller specification and match CK to CA within the datasheet flight-time budget. Use dynamic ODT during writes and on-die termination settings per the Samsung datasheet to damp reflections; enable write leveling and read training in the memory controller during initialization. Avoid routing DDR4 signals across plane splits, and keep a continuous reference plane under every data group. Estimated: at 1200 MHz, a 25 mm stub can resonate enough to close the data eye on FR-4, so eliminate all stubs with point-to-point topology.
Supply the K4A8G165WB-BCRC from a clean 1.2V VDD rail plus a separate 2.5V VPP rail for the wordline pump, with VREFCA generated per the datasheet reference circuit. Decouple with bulk capacitance at the regulator and an array of 100 nF ceramics placed directly under the FBGA-96 power balls. Follow the power-up sequence: VDD and VPP ramp before or together with VREFCA while RESET_n is held low, then complete initialization including ZQ calibration (240 ohm, 1% resistor to ground at the ZQ ball). Estimated: per-device average current at DDR4-2400 activity is on the order of hundreds of milliamps - size the regulator with at least 50% margin.
Do not assume all K4A8G165WB suffixes carry identical speed bins - the final letter code (BCRC, BCPB, BCTD, BCWE) encodes JEDEC timing grades, and programming a controller for a faster bin than the installed part violates tCK/CL requirements causing unstable boot. Also verify the die revision letter in the full ordering code: the C-die (K4A8G165WC) may have different timing tables from the B-die (K4A8G165WB). Samsung reserves the right to change specifications without notice, so re-check the latest datasheet revision before a production tape-out and qualify any substitute on your actual board.
규정 준수 정보
Compliance status not stated in the provided web data; consult the official Samsung product page or environmental datasheet for RoHS/REACH declarations.
