K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps 1.2V | Samsung
부품 번호: K4A8G085WB-BCRC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $47.8125 | $47.81 |
| 10 | $34.5313 | $345.31 |
| 100 | $30.5469 | $3,054.69 |
| 500 | $29.2188 | $14,609.40 |
| 1,000 | $27.8906 | $27,890.60 |
K4A8G085WB-BCRC 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR DRAM family, sitting within the memory hierarchy of volatile semiconductor memory. Compared with DDR3, DDR4 lowers the core supply voltage from 1.5V to 1.2V - roughly 25% lower power consumption per Samsung - and increases bank counts, bank groups, and data rates up to 3200 Mbps, making it the dominant main-memory technology in servers, workstations, and embedded controllers.
Key features of the K4A8G085WB-BCRC include 8Gbit density in a x8 organization, 2400 Mbps (DDR4-2400, CL17-class timing, 0.175 ns characteristic CK period as listed by distributors), an 8192-cycle refresh scheme per 64 ms, and operation over a commercial 0C to +85C temperature range. The B-die wafer is well known in the enthusiast memory community for its strong overclocking headroom and tight timing capability, which is why modules built from B-die are prized for low-latency tuning.
Technically, the device implements the DDR4 bank-group architecture with 16 banks arranged in 4 bank groups, on-die termination (ODT), data mask (DM) support on the x8 organization, and a 1.2V SSTL12 interface. Internal accesses are pipelined through the memory array while column address strobe latency is programmed via the mode register set (MRS), enabling the memory controller to optimize bus efficiency.
Typical applications include desktop and server DIMM modules, embedded industrial controllers, networking equipment line cards, and set-top or display platforms where 1 GB per chip of main memory is required. Its 1.2V operation also suits power-sensitive designs migrating from DDR3L.
When designing with this device, ensure the memory controller supports DDR4 bank groups and 8192-cycle refresh, and follow Samsung layout guidance for length-matched fly-by address/command routing and VTT termination.
This page consolidates distributor stock data, drop-in alternatives, and practical design notes not found in the Samsung datasheet itself.
드롭인 대체품: K4A8G085WB-BCRC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4A8G085WB-BCPB
✓ 재고 있음
$13.7813 / 개
데이터시트 보기 →K4A8G085WB-BITD
✓ 재고 있음
$3.8 / 개
데이터시트 보기 →K4A8G085WC-BIWE
✓ 재고 있음
$6.29 / 개
데이터시트 보기 →K4A8G085WB
✓ 재고 있음
$5.2 / 개
데이터시트 보기 →K4A8G085WG-BCWE
📋 참조 대체품 (카탈로그에 없음)
K4A8G085WB-BCRC 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM (B-die) |
| Density | 8 Gbit |
| 메모리 구성 | 1G x 8 |
| 데이터 속도 | 2400 Mbps (DDR4-2400) |
| 공급 전압 | 1.2 V |
| Clock Cycle Time | 0.175 ns (per distributor listing) |
| Refresh Cycles | 8192 |
| 인터페이스 | SSTL12 |
| 동작 온도 | 0C to +85C |
| 패키지 | 78-ball FBGA (PBGA78), 9 x 11 mm, 0.8 mm pitch |
| 실장 유형 | Surface Mount |
| Termination | On-Die Termination (ODT) |
| Bank Architecture | DDR4 bank-group architecture |
| Data Mask | DM supported (x8 organization) |
K4A8G085WB-BCRC 78-ball fbga (pbga78), 9 x 11 mm, 0.8 mm pitch 핀 구성 가이드
K4A8G085WB-BCRC(78-ball fbga (pbga78), 9 x 11 mm, 0.8 mm pitch 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4A8G085WB-BCRC.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4A8G085WB-BCRC 적합 용도: 6 애플리케이션s: Desktop and Server DIMM Modules, Embedded Industrial Controllers, Networking Equipment Line Cards, Set-Top Boxes and Smart Display Platforms, Test and Measurement Instrumentation, Automotive-Adjacent Infotainment Development.
Desktop and Server DIMM Modules
The K4A8G085WB-BCRC is a primary component for unbuffered and registered DIMM construction. Its 8Gb B-die density allows a single-rank 8 GB UDIMM using only eight x8 chips, reducing component count versus 4Gb alternatives, while the DDR4-2400 speed bin matches mainstream server and desktop memory-controller defaults. The x8 organization supports ECC topologies where a ninth chip supplies check bits across a 72-bit bus, and the 8192-cycle refresh aligns with standard DDR4 controller timing. Because the 1.2V SSTL12 interface consumes roughly 25% less power than DDR3, high-population server platforms gain meaningful thermal headroom. B-die silicon also provides tuning margin for performance modules.
추천
Embedded Industrial Controllers
Industrial PCs, PLCs, and machine-vision controllers use the K4A8G085WB-BCRC as main memory where 1 GB per chip suffices for frame buffers and application workloads. The 78-ball FBGA in 9 x 11 mm suits compact solder-down designs on carrier boards, and the 0C to +85C commercial range covers controlled cabinet environments; for wider ambients, the K4A8G085WB-BITD industrial variant drops into the same footprint. Its DDR4-2400 bandwidth feeds multi-gigabit Ethernet and image pipelines without becoming the bottleneck, while the 1.2V rail simplifies power trees derived from 24 V industrial supplies through a single buck stage followed by VTT termination.
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Networking Equipment Line Cards
Switch, router, and gateway line cards rely on the K4A8G085WB-BCRC for packet buffering and control-plane memory. The DDR4 bank-group architecture sustains interleaved read/write streams typical of packet forwarding, and 2400 Mbps per pin provides multi-GB/s aggregate bandwidth for lookup tables and queue descriptors. The x8 organization allows flexible 64-bit or 72-bit ECC bus widths, and the 78-ball FBGA supports dense two-sided PCB placement beside the network processor. Samsung's DDR4 platform documentation highlights improved bandwidth and reliability at lower energy, which directly benefits always-on telecom hardware with strict thermal budgets.
추천
Set-Top Boxes and Smart Display Platforms
Broadcast and display SoCs frequently validate Samsung DDR4 1G x 8 B-die components such as the K4A8G085WB-BCRC in their reference designs. One chip supplies 1 GB, enough for 4K video buffering and application memory in cost-optimized set-top and digital-signage hardware, and multiple chips scale to 2-4 GB. The 1.2V interface reduces standby and playback power versus DDR3L predecessors, extending compliance headroom for energy regulations. Because solder-down FBGA placement avoids SO-DIMM connectors, overall BOM cost drops, and the same footprint accommodates speed-bin variants like the BCPB for supply-chain flexibility across production lots.
추천
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators use DDR4 DRAM like the K4A8G085WB-BCRC for deep waveform capture memory, where sustained write bandwidth determines maximum sample streaming rates. The DDR4-2400 bus provides predictable sequential throughput for memory-controller DMA engines, and the 8Gb density per chip enables multi-gigabyte capture depths by paralleling devices across x8 slices. B-die silicon is noted for tight timing distribution, which helps capture-memory subsystems meet calibration margins. The commercial 0C to +85C range suits benchtop environments; use the BITD variant in portable field instruments exposed to wider temperatures.
추천
Automotive-Adjacent Infotainment Development
While the -BCRC commercial grade is not AEC-Q100 qualified and must not ship in automotive safety paths, it is widely used in development platforms, aftermarket infotainment, and non-safety display modules where DDR4 main memory of 1-4 GB is required. Its DDR4-2400 bandwidth supports navigation rendering and media decode pipelines, and the 78-ball FBGA layout matches common SoC reference designs from display and cockpit processor vendors. Teams migrating such designs into certified vehicle programs should plan a footprint-compatible transition path and requalification, verifying temperature grades and memory-controller timing against the target grade before release.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4A8G085WB-BCRC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4A8G085WB-BCPB | K4A8G085WB-BITD | K4A8G085WC-BIWE | K4A8G085WG-BCWE |
|---|---|---|---|---|---|
| Package | 78-ball FBGA (PBGA78) | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density / Organization | 8 Gbit, 1G x 8 | 8 Gbit, 1G x 8 | 8 Gbit, 1G x 8 | 8 Gbit, 1G x 8 | 8 Gbit, 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C (commercial) | 0C to +85C (commercial) | Industrial grade (wider range) | Industrial grade (wider range) | 0C to +85C (commercial) |
| Refresh Cycles | 8192 | 8192 | 8192 | 8192 | 8192 |
주요 차별점
- B-die silicon with strong timing headroom (vs K4A8G085WC-BIWE)
- Cost-optimized commercial grade (vs K4A8G085WB-BITD)
- Identical footprint to full speed-bin family (vs K4A8G085WG-BCWE)
설계 노트
Route DDR4 address/command lines in a fly-by topology with length-matched traces per Samsung's DDR4 design guide, terminating at VTT (0.6V) near the last DRAM on the bus. For the x8 organization, keep DQ/DQS/DM length matching within the controller vendor's specified window (typically a few millimeters per 100 mm of trace) and reference these signals to a solid ground plane to preserve the SSTL12 eye at 2400 Mbps.
The 1.2V VDD rail and the VTT termination rail should be generated from separate regulators or one controller with a VTT LDO, since VTT sources and sinks current during bus transitions. Decouple each FBGA with the datasheet-recommended bulk and 0.1 uF ceramic caps placed within a few millimeters of VDD/VDDQ balls. Estimated: a single 8Gb chip at DDR4-2400 draws on the order of a few hundred milliwatts active, so plan the 1.2V converter budget per chip count.
Confirm the memory controller supports DDR4 bank-group architecture and 8192-cycle refresh before substituting bins - the BCPB/BITD suffixes change timing and temperature codes, not the pinout. Do not mix commercial BCRC parts with industrial BITD parts on the same bus without revalidating read margins across temperature. Also, never attempt to cross DDR3 designs with this DDR4 part; the SSTL12 interface and DDR4 protocol are incompatible with DDR3 controllers despite similar footprints.
규정 준수 정보
Verified web data does not include explicit RoHS/REACH declarations for this exact suffix. Commercial-grade part (0C to +85C); not an automotive AEC-Q100 offering. Obtain formal declarations from Samsung or your distributor for the purchased date code.
