K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 3200Mbps | Samsung
부품 번호: K4A8G085WB-BCPB ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $23.625 | $23.63 |
| 10 | $17.0625 | $170.63 |
| 100 | $15.0937 | $1,509.37 |
| 500 | $14.4375 | $7,218.75 |
| 1,000 | $13.7813 | $13,781.30 |
K4A8G085WB-BCPB 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a volatile memory technology that transfers data on both rising and falling edges of the clock, doubling the effective data rate. Within the memory hierarchy it sits below the memory controller and above storage, serving as main system memory. DDR4 succeeded DDR3 by lowering the core supply from 1.5V to 1.2V (up to 40% power reduction), increasing bank count from 8 to 16 via bank groups, and raising densities to 8Gb and beyond.
Key features of the K4A8G085WB-BCPB include the 3200 Mbps data rate (BC speed grade), CAS Latency 22, burst length 8, and 16 banks in 4 bank groups for improved parallelism. On-die termination (ODT) and dynamic ODT improve signal integrity, while temperature-compensated self-refresh (TCSR) reduces standby power.
The device is fabricated on Samsung's advanced DRAM process (B-die generation) and supports programmable read latency (RL) and write latency (WL). It runs from a 1.2V supply (nominal) with refresh intervals of 7.8 us up to 85C operating temperature. DLL-enabled mode operation ensures precise output timing across the speed range.
Typical applications include desktop and laptop DIMMs, embedded computing boards, industrial PCs, networking equipment, and test instrumentation requiring high bandwidth in a compact footprint.
When designing in this component, match memory controller timing parameters (CL22 at 3200 Mbps), place decoupling capacitors close to the power balls, and follow the length-matched fly-by routing of DDR4 for CK/CA/DQS nets.
This page adds distributor pricing data, drop-in alternatives within the same Samsung DDR4 x8 family, and cross-brand equivalents (SK Hynix, Micron, Nanya) not found in the manufacturer datasheet alone.
드롭인 대체품: K4A8G085WB-BCPB — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4A8G085WB-BCPB (동일 폼 팩터 및 풋프린트) — 차이점: Package, Data Rate, Density, Operating Temperature, Organization.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4A8G085WB-BCRC
✓ 재고 있음
$6.8 / 개
데이터시트 보기 →K4A8G085WB-BITD
✓ 재고 있음
$3.8 / 개
데이터시트 보기 →K4A8G085WB-BIWE
✓ 재고 있음
$6.5 / 개
데이터시트 보기 →K4A8G085WC-BCTD
✓ 재고 있음
$50.85 / 개
데이터시트 보기 →K4A8G085WC-BIWE
✓ 재고 있음
$6.29 / 개
데이터시트 보기 →H5AN8G8NDJR
✓ 재고 있음
$24.5 / 개
데이터시트 보기 →MT40A1G8WE-075E
✓ 재고 있음
$11.9 / 개
데이터시트 보기 →K4A8G085WB-BCPB 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Density | 8 Gbit |
| 메모리 구성 | 1G x 8 |
| 공급 전압 | 1.2 V (nominal) |
| 데이터 속도 | 3200 Mbps (PC4-25600) |
| Speed Grade | BC |
| CAS Latency (CL) | 22 |
| Burst Length | 8 |
| Bank Architecture | 16 banks (4 bank groups) |
| Refresh Interval | 7.8 us (up to 85C) |
| 인터페이스 유형 | SSTL-12 |
| Termination | ODT / dynamic ODT |
| Self-Refresh | Temperature-Compensated Self-Refresh (TCSR) |
| 패키지 | 78-ball FBGA |
| Package Dimensions | 11 mm x 11 mm |
| 실장 유형 | Surface Mount (BGA) |
| Operating Mode | DLL enabled |
| RoHS 상태 | Compliant |
K4A8G085WB-BCPB 핀 구성
| 핀 A1 | DQ0 — Data I/O bit 0 |
| 핀 A2 | DQ1 — Data I/O bit 1 |
| 핀 A3 | DQ2 — Data I/O bit 2 |
| 핀 A7 | DQ3 — Data I/O bit 3 |
| 핀 A8 | DQ4 — Data I/O bit 4 |
| 핀 A9 | DQ5 — Data I/O bit 5 |
| 핀 B7 | DQ6 — Data I/O bit 6 |
| 핀 B8 | DQ7 — Data I/O bit 7 |
| 핀 B9 | DM — Data input mask |
| 핀 A4 | TDQS — Termination data strobe (tied to DQS in x8) |
| 핀 B5 | TDQS# — Termination data strobe complement |
| 핀 A5 | DQS — Data strobe |
| 핀 B6 | DQS# — Data strobe complement |
| 핀 C2 | A0 — Address input 0 |
| 핀 C7 | A1 — Address input 1 |
| 핀 C8 | A2 — Address input 2 |
| 핀 D2 | A3 — Address input 3 |
| 핀 D7 | A4 — Address input 4 |
| 핀 D8 | A5 — Address input 5 |
| 핀 E2 | A6 — Address input 6 |
| 핀 E7 | A7 — Address input 7 |
| 핀 E8 | A8 — Address input 8 |
| 핀 F2 | A9 — Address input 9 |
| 핀 F7 | A10 — Address input 10 / AP (auto precharge) |
| 핀 F8 | A11 — Address input 11 |
| 핀 G2 | A12 — Address input 12 / BC (burst chop) |
| 핀 G7 | A13 — Address input 13 |
| 핀 G8 | A14 — Address input 14 |
| 핀 H2 | A15 — Address input 15 |
| 핀 H7 | A16 — Address input 16 |
| 핀 H8 | A17 — Address input 17 |
| 핀 K2 | BA0 — Bank address 0 |
| 핀 K7 | BA1 — Bank address 1 |
| 핀 K8 | BG0 — Bank group address 0 |
| 핀 L2 | BG1 — Bank group address 1 |
| 핀 L7 | CK — Differential clock (positive) |
| 핀 L8 | CK# — Differential clock (negative) |
| 핀 M2 | CKE — Clock enable |
| 핀 M7 | CS# — Chip select (active low) |
| 핀 M8 | ODT — On-die termination control |
| 핀 N2 | ACT# — Activation command input (active low) |
| 핀 N7 | RST# — Reset (active low, pulldown) |
| 핀 N8 | PAR — Command/address parity input |
| 핀 P2 | ALERT# — Alert output (open drain, pulldown) |
| 핀 G1 | VDDQ — DQ power supply (1.2V) |
| 핀 H1 | VDDQ — DQ power supply (1.2V) |
| 핀 J1 | VDDQ — DQ power supply (1.2V) |
| 핀 K1 | VDDQ — DQ power supply (1.2V) |
| 핀 G9 | VSSQ — DQ ground |
| 핀 H9 | VSSQ — DQ ground |
| 핀 J9 | VSSQ — DQ ground |
| 핀 K9 | VSSQ — DQ ground |
| 핀 D1 | VDD — Core power supply (1.2V) |
| 핀 E1 | VDD — Core power supply (1.2V) |
| 핀 F1 | VDD — Core power supply (1.2V) |
| 핀 D9 | VSS — Core ground |
| 핀 E9 | VSS — Core ground |
| 핀 F9 | VSS — Core ground |
| 핀 M1 | VDD — Core power supply (1.2V) |
| 핀 N1 | VDD — Core power supply (1.2V) |
| 핀 M9 | VSS — Core ground |
| 핀 N9 | VSS — Core ground |
| 핀 C1 | VPP — DRAM activation power supply (2.5V) |
| 핀 C3 | VPP — DRAM activation power supply (2.5V) |
| 핀 C9 | VPP — DRAM activation power supply (2.5V) |
| 핀 B1 | VSS — Ground |
| 핀 B2 | VSS — Ground |
| 핀 A6 | NC — Not connected (per datasheet) |
| 핀 B3 | NC — Not connected (per datasheet) |
| 핀 B4 | NC — Not connected (per datasheet) |
| 핀 J2 | NC — Not connected (per datasheet) |
| 핀 J7 | NC — Not connected (per datasheet) |
| 핀 J8 | NC — Not connected (per datasheet) |
| 핀 L1 | NC — Not connected (per datasheet) |
| 핀 L9 | NC — Not connected (per datasheet) |
| 핀 P1 | NC — Not connected (per datasheet) |
| 핀 P7 | NC — Not connected (per datasheet) |
| 핀 P8 | NC — Not connected (per datasheet) |
| 핀 P9 | NC — Not connected (per datasheet) |
일반적인 애플리케이션
K4A8G085WB-BCPB 적합 용도: 6 애플리케이션s: Desktop and Laptop Main Memory, Embedded Computing and Industrial PCs, Networking and Communications Equipment, Server and Data Center Memory Modules, Test and Measurement Instrumentation, Medical Imaging and Diagnostic Devices.
Desktop and Laptop Main Memory
The K4A8G085WB-BCPB is a core building block for PC4-25600 UDIMM and SO-DIMM modules used in desktop and laptop computers. Its 8Gb density in a 1G x 8 organization allows eight devices to populate a 64-bit channel with ECC on x8 lanes, while the 3200 Mbps data rate at CL22 matches mainstream DDR4 memory controller support. The 1.2V rail reduces module power versus DDR3, and dynamic ODT helps maintain signal integrity across multi-rank topologies. For module designers, the 11mm x 11mm FBGA-78 footprint aligns with standard DIMM land patterns, and TCSR trims standby power in mobile sleep states, extending battery life in portable systems.
추천
Embedded Computing and Industrial PCs
Industrial PCs, gateways, and embedded x86/ARM boards use the K4A8G085WB-BCPB soldered down for main memory, gaining 8Gb per device without SO-DIMM sockets that suffer from vibration. The 1.2V DDR4 interface reduces system heat in sealed fanless enclosures, while the 3200 Mbps grade matches common chipsets such as Intel Atom and AMD Ryzen Embedded families. Designers should place per-ball decoupling capacitors and length-match fly-by control nets. For extended-temperature deployments, consider the industrial-coded -BITD sibling, which shares the same footprint, keeping the PCB unchanged while improving the operating envelope.
추천
Networking and Communications Equipment
Switches, routers, and network appliances rely on the K4A8G085WB-BCPB for packet buffering and deep-flow tables, where the 16-bank, 4-bank-group architecture improves random-access parallelism and effective bandwidth. The x8 organization supports ECC scrubbing essential for long-uptime infrastructure, and 3200 Mbps operation keeps memory from bottlenecking multi-gigabit data paths. The 78-ball FBGA packages densely on control-line cards. Thermal design should account for continuous full-bandwidth traffic; use air flow plus thermal vias under the package, and enable ODT per the controller's calibration routine to hold margins across temperature.
추천
Server and Data Center Memory Modules
In RDIMM and ECC UDIMM builds, the K4A8G085WB-BCPB provides the x8 width required for single-device data correction (SDDC) on Intel and AMD server platforms. The BC-grade CL22 timing at DDR4-3200 aligns with standard server memory profiles, and the B-die silicon is well characterized for high reliability. Registered modules buffer command/address to scale to 16+ DIMMs per channel population. Designers stacking dual-rank DIMMs should verify CK/CA loading and drive-strength settings, and use the manufacturer datasheet refresh tables (7.8 us up to 85C) when configuring the memory controller's refresh rate in thermally constrained chassis.
추천
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and arbitrary waveform generators need large, fast capture buffers, making the K4A8G085WB-BCPB a fit with its 3200 Mbps streaming capability and 8Gb per device. Multiple devices in 64-bit or 72-bit (ECC) arrays deliver the sustained write bandwidth needed for real-time acquisition without sample loss. The 1.2V interface reduces noise coupling into sensitive analog front ends versus older 1.5V DDR3 designs. Instrument designers should implement write-leveling and read-training firmware during production calibration, since FBGA soldered-down DRAM in compact boards demands precise per-trace timing closure for full-speed operation.
추천
Medical Imaging and Diagnostic Devices
Ultrasound, digital radiography, and lab analyzers accumulate large frame buffers that the K4A8G085WB-BCPB serves with 8Gb density and 3200 Mbps bandwidth, enabling real-time image pipelines at 1.2V power levels suited to patient-adjacent equipment. The soldered FBGA-78 package avoids connector reliability issues in mobile carts, and temperature-compensated self-refresh keeps standby draw low between scans. Designers should verify refresh timing against the datasheet operating window and use ECC-capable x8 organization to protect diagnostic data integrity. Add ground-plane shielding between DRAM and analog capture front ends to preserve low-noise imaging performance.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4A8G085WB-BCPB — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4A8G085WB-BCRC | K4A8G085WC-BCTD | H5AN8G8NDJR | MT40A1G8WE-075E |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same (JEDEC) | 78-ball FBGA - same (JEDEC) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix | Micron |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 2666 Mbps (RC grade) | 2666 Mbps | 2666 Mbps (JR grade) | 1866 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 22 | 19 (at grade rate) | 19 | 19 | 15 |
| Bank Architecture | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups |
주요 차별점
- Full DDR4-3200 (BC grade) speed support (vs K4A8G085WB-BCRC)
- High-volume B-die supply base (vs MT40A1G8WE-075E)
- ECC-ready x8 organization with TDQS (vs K4A8G165WC-BCWE)
설계 노트
Route DDR4 using the standard fly-by topology for CK, address, and command nets with on-die termination enabled; keep DQS/DQ length-matched within the controller's specified skew window. Provide at least one 0.1uF decoupling capacitor per VDD/VDDQ ball pair placed within 2mm of the package, plus bulk capacitance at the voltage regulator module. The 78-ball FBGA footprint is JEDEC-standard, so land patterns interchange freely across Samsung, SK Hynix, and Micron x8 DDR4 devices.
The K4A8G085WB-BCPB requires two rails: 1.2V VDD/VDDQ and 2.5V VPP for word-line activation. Size the VPP rail for low average current but be aware activation peaks; do not omit VPP decoupling, as VPP droop causes cell instability errors. Estimated: total active power at DDR4-3200 per device is typically a few hundred milliwatts, dominated by I/O switching; verify against the datasheet IDD figures for your specific traffic pattern.
Configure the memory controller to the BC speed grade timing tables (CL22 at 3200 Mbps) before bring-up; running faster grade timings on slower-coded parts causes intermittent bit errors. Perform write-leveling, read training, and DQS gate calibration at every boot and at temperature extremes. When substituting the -BCRC or -BITD siblings, re-verify SPD data and controller settings - the package is identical but speed bins and temperature coding differ.
규정 준수 정보
RoHS compliance per standard Samsung DRAM product data; REACH and halogen-free status not stated in provided data.
